本實驗主要以熱注入合成法進行全無機溴化銫鉛鈣鈦礦量子點材料製備，並透過雙十二烷基二甲基溴化銨或水分子進行後段處理，並藉由結構分析與光學性質量測進行後處理對溴化銫鉛鈣鈦礦量子點的特性研究。由分析結果可知：經過雙十二烷基二甲基溴化銨後段處理所製備的溴化銫鉛鈣鈦礦量子點，其螢光量子效率分別可達91.8 %，並且可以穩定地保存於甲苯達90天以上；經過水分子後段處理。所製備的溴化銫鉛鈣鈦礦量子點，其螢光量子效率分別可達91.5 %，並且可以穩定地保存於正己烷達60天以上。此外，對於紅色激發光的溴碘化銫鉛鈣鈦礦量子點可藉由錳離子的摻雜來提升螢光量子效率以及穩定性。經由分析結果可知：錳離子摻雜後的溴碘化銫鉛鈣鈦礦量子點之量子螢光效率可達96.1 %，並可在辛烷中可以保存180天以上。在銫鉛鹵素鈣鈦礦量子點穩定性研究方面，在本研究中以矽酸四甲酯水解反應所形成二氧化矽做為銫鉛鹵素鈣鈦礦量子點的水氧阻隔層並進行粉體製作。由分析結果顯示：經二氧化矽包覆的銫鉛鹵素鈣鈦礦量子點粉體都具有阻擋水氣破壞的影響並延長其螢光壽命。接著，將二氧化矽包覆溴化銫鉛量子點粉體與溴碘化銫鉛量子點粉體與聚甲基丙烯酸甲酯分散於甲苯溶液均勻混合後製成光轉換層，並置於激發光波段位於460 nm的氮化銦鎵藍光二極體晶片上，可測量其色度座標位置為(0.3376，0.3366)，並在施加電壓2.5伏特所量測到的色溫約為5400 K，發光效率35 lmW-1及輝度1787 cdm-2。此外，其色域達128 %NTSC標準。 

In this study, a hot-injection process was used to synthesized all-inorganic perovskite cesium lead bromide quantum dots (CsPbBr3 -QDs) and dodecyldimethylammonium bromide (DDABr) molecule or water molecules were used for post-treatment. Structural analyses and optical properties measurement were used to characterize without or with post-treated CsPbBr3 ¬QDs. From analysis results, we could know that after DDAB post-treated CsPbBr3 ¬QDs could obtain photoluminescence quantum yield (PL-QY) of 91.8 % and storage in toluene for 90 days, and after H2O post-treated CsPbBr3 ¬QDs could obtain PL-QY of 91.5 % and storage in n-hexane for 60 days. In addition, for red emission CsPb(I/Br)3 QDs, manganese (Mn) was used as dopant for improving the PL-QY and stability. According to analysis results, Mn doped CsPb(I/Br)3 QDs could obtain PL-QY of 96.1 % and storage in octane for 180 days. For the stability of CsPbX3 (X=Br, I) ¬QDs, tetramethyl orthosilicate (TMOS) was used as precursor for silica shell formation enclosed on the surfaces of CsPbX3 QDs. Silica shell could be regarded as humidity and oxygen barrier layer and powder fabrication. From analysis results, we could know that the stability of CsPbX3 QDs could be improved by silica barrier layer due to reduce the influence of humidity. In the next, CsPbBr3/SiO2 and [CsPb(Br/I)3]/SiO2 powders were blended together to mix with poly (methyl methacrylate) (PMMA) as light convert layer. Combing the light convert layer with blue indium gallium nitride (InGaN) light emitting diode (LED) chip with 460 nm, CIE 1931 uniform chromaticity color space, color temperature, luminous efficiency and luminance were (0.3376, 0.3366), 5400 K, 35 lmW-1 and 1787 cdm-2 under 2.5 volt. In addition, the color gamut could achieve 128 % of NTSC standard.

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