本研究分為兩個部分，第一部分為高分子刷製備。包括矽晶片表面親水性處理、合成矽烷類自組裝層、固定聚合起始劑，再藉由原子轉移自由基聚合法（Atom transfer radical polymerization, ATRP）進行表面起始聚合（Surface-initiated polymerization），製備聚甲基丙烯酸缩水甘油酯（Poly(glycidyl methacrylate), PGMA）高分子刷，以不同聚合時間製備出厚度15.7至110.0nm的高分子刷。反應後以紅外光譜儀（FT-IR）及化學分析影像能譜儀（ESCA）分析表面組成，可知含有大量碳氫鍵與碳氧單／雙鍵，碳元素含量達71.68%，氧元素含量為28.04%；以原子力顯微鏡（AFM）分析表面粗糙度，ATRP前後分別為0.202nm及1.056nm。另一方面利用微影製程於空白矽晶片表面製備線型光阻，進行表面改質後，移除光阻層留下線型圖案的ATRP起始劑，再以不同的ATRP反應時間及光阻尺寸，製備出不同高度及寬度之圖案化PGMA高分子刷。以AFM進行形貌分析，最大高度達113.1nm。
　　PGMA側鏈之Epoxy ring因其高活性，常被用來接上特殊功能之分子，本研究第二部分是合成量子點硫化鎘（Quantum dots, CdS），利用CdS表面親核性基團與PGMA之Epoxy group進行開環加成反應，即可製備出具螢光圖案之高分子刷。由場發射槍穿透式電子顯微鏡（FE-TEM）及光激發螢光光譜儀（PL）分析CdS後，可知粒徑為5nm，放射的螢光為578nm之橘光。接上CdS的高分子刷以ESCA進行元素分析，Cd與S的含量分別為2.68及3.79%；另一方面由雷射掃描共軛焦分光光譜顯微鏡（SCMS）進行觀測，可得到接上量子點後高分子刷之螢光圖案。

　　This study consisted of two parts, the first one was the fabrication of polymer brushes on silicon wafer, including surface hydrophilic modification, the synthesis of the silane self assembly monolayer (SAM), the immobilization of the initiator of polymerization, and the polymerization of Poly(glycidyl methacrylate) brushes (PGMA) initiated from the surface of silicon wafer via atom transfer radical polymerization (ATRP). By varying the polymerization time, we achieved different thickness of PGMA brushes between 15.7 and 110.0nm. Chemical analysis by Fourier transform infrared spectroscope (FT-IR) and Electron spectroscopy for chemical analysis system (ESCA) demonstrated the surface after ATRP contained lots of C-H and C-O/C=O bonds, and the content of carbon and oxygen was 71.68% and 28.04%. Atomic force microscope (AFM) analysis showed the roughness increased from 0.202nm to 1.056nm after ATRP. Additionally, we used the linear photoresist-modified wafers fabricated by lithography to form the silane SAM, and the photoresist was removed prior to immobilize the ATRP initiator. Sequentially, we synthesized the patterned PGMA brushes with difference height and width by varying the reaction time of ATRP and the scales of the photoresist. AFM analysis showed the maximum height of linear pattern reached to 113.1nm.
　　High reactivity of the epoxy ring on the PGMA side chain makes it a good position for ring-opening addition reaction. The second part of this study included the synthesis of the hydroxyl-capped Cadmium sulfide, and took it as a nucleophile to bind to the epoxy ring on PGMA. Thus, we obtained the fluorescent patterned PGMA brushes. The particle size of CdS obtained by Field emission transmission electron microscope (TEM) image was 5nm, and the 578nm emission light was analyzed by Photoluminescence spectrometry (PL). ESCA analysis showed the content of cadmium and sulfur was 2.68% and 3.79% from the CdS-PGMA brushes. Finally, Spectral confocal and multiphoton system (SCMS) imaged the different width fluorescent patterns, and demonstrated CdS was bound to the patterned PGMA brushes.

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