本文探討鈦(Ti)薄膜及氧化銦錫(Indium tin oxide, ITO)薄膜沈積於不同基材的殘留應力。鈦以電子束蒸鍍及射頻濺鍍製程沈積200nm厚度薄膜於矽晶圓基材表面上；氧化銦錫以射頻濺鍍製程沈積200nm厚度薄膜於聚碳酸酯(Polycarbonate, PC)及聚乙烯對苯二甲酸酯(Polyethylene Terephthalate, PET)撓性基材表面上；利用表面輪廓儀量測試片蒸鍍或濺鍍前後的曲率變化再反算其殘留應力及薄膜沈積厚度之誤差；奈米壓痕儀來量測薄膜的硬度與計算出楊氏係數；X-ray繞射儀檢測晶格結晶方向及低掠角X-ray繞射法量測薄膜之殘留應力。針對氧化銦錫薄膜試片增加使用微米刮痕儀量測薄膜之附著力；光譜儀量測薄膜的可見光穿透率(Visible transmittance)；四點探針電阻儀量測通過薄膜之電壓和電流的變化值，可計算出薄膜片電阻Rs(Ω/□)。
綜合實驗結果得知，沈積鈦薄膜在殘留應力檢測方面，兩種製程所產生的殘留應力與沈積過程、沈積參數有相當大的關係；在機械性質檢測方面，其硬度和楊氏係數等機械性質亦取決於薄膜之殘留應力；沈積鈦薄膜之最強結晶方向為(002)，其最大繞射峰強度約在38°左右。
沈積氧化銦錫薄膜在殘留應力檢測方面，隨著檢測溫度上升，氧化銦錫薄膜之壓縮殘留應力會有減少趨勢；在機械性質檢測方面，氧化銦錫薄膜會隨著檢測溫度升高，其楊氏係數及硬度會有下降趨勢；在光電特性檢測方面，各類製程所量測之透光率或片電阻值都與目前業者所訂之規範誤差在5%範圍內；沈積氧化銦錫薄膜之最強結晶方向為(222)，其最大繞射峰強度約在30°左右。

This work aims to study residual stresses of titanium and indium tin oxide thin films deposited on various substrates. A 200 nm thick titanium (Ti) thin film is deposited on silicon wafers by electron beam evaporation, and the same thick indium tin oxide (ITO) thin film is deposited on polycarbonate (PC) and polyethylene terephthalate (PET) substrates by sputtering. This work is aimed to study residual stresses of titanium and indium tin oxide thin film that was deposited on substrates. The residual stresses are calculated from the substrate curvature changes before and after the thin film deposition by a surface profiler. Nanoindenter and X-ray Diffraction are used to test the mechanical properties and microscopic structures of the thin films; meanwhile, micro scratch, spectroscope, and four-point probe were utilized to test the photoelectric properties of the indium tin oxide thin films.
For the titanium thin films, the experimental results show that all the residual stresses are compressive and increase with deposition rate but decrease as the substrate temperature increases. The Young’s modulus increases but the hardness decreases as the deposition rate increases, which reveals that the hardness and elastic modulus sensitively depend on the parameters of deposition processes. Those X-ray diffraction patterns reveal that the crystalline phase major peak is always found to be (002) preferred orientation and a strong (002) spike is present at 2θ = 38º.
For the ITO thin films, the residual stresses decrease by 38% and 50% in the cases of gradient power sputtering and the copper interlayer. In mechanical properties, both the elastic modulus and hardness decrease as the temperature increases. The transmittance was increased by using the gradient power sputtering method and elevating the sputtering temperature method. The conductivity was increased by adding the copper interlayer. Those X-ray diffraction patterns reveal that the crystalline phase major peak is always found to be (222) preferred orientation and a strong (222) spike is present at 2θ = 30º.

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