近年來，由於能源的危機，大家紛紛投入太陽能電池的研究與發展。目前化合物薄膜太陽能電池以銅銦鎵硒為主，但由於成本高昂，故無法普及化，因此需要新的材料來控制成本，因而發展出硫化銅錫鋅與硒化銅錫鋅兩種化合物太陽能電池，因錫、鋅的含量豐富且硒化物能隙值為0.9-1.07eV、硫化物為1.5eV，適合拿來作替換的材料。
本次實驗利用濺鍍法製備硒化銅錫鋅薄膜，並探討不同靶材在不同基板成長溫度下對硒化銅錫鋅薄膜的特性之影響，並且透過場發射電子掃描式顯微鏡、XRD分析、能量散譜儀(EDS)、分析硒化銅錫鋅之薄膜物理性質。透過霍爾量測、光致發光(PL)分析薄膜之電性以及光學特性。利用擬太陽能光測試儀器測試其電池之轉換效率。
經由實驗的結果顯示，濺鍍系統中於基板溫度400℃下所沉積的薄膜性質較佳，其薄膜為多晶結構，晶粒大小為幾百奈米，薄膜皆為P型半導體，能隙為直接能隙，其能隙值約在0.9-1.08eV，吸收係數(α)在退火前後均維持在104~105cm-1、載子濃度為1020-1021cm-3，薄膜皆具有低的電阻率10-3ohm-cm，載子遷移率最高為10cm2V-1s-1。利用其最佳參數製備電池，最後測試其太陽能電池轉換效率之結果尚待改善。

Due to energy crisis, the research of solar cells is recently much more attractive. The main compound thin film solar cell is the Cu(In,Ga)Se2 system, but the high cost has limited its further applications. Lowing the cost with the finding of new materials is necessary, therefore Cu2ZnSnS4(CZTS) and Cu2ZnSnSe4 (CZTSe) solar cells with energy band gaps of 1.5 eV and 0.9-1.07eV, respectively, are developed.
In this study, the effects of the target composition and substrate temperature on the performance of sputtered Cu2ZnSnSe4 thin film were evaluated. The physical characteristics of the Cu2ZnSnSe4 thin film were investigated by X-Ray Diffraction(XRD), Field Emission-Scanning Electron Microscope(FE-SEM), and Energy Dispersive Spectrometer(EDS) . Hall measurement and Photoluminescence were used for the electrical and optical properties, respectively.
The experimental results shows that the sputtered Cu2ZnSnSe4 thin films deposited at 400℃ have better performance. At this condition, the films are p-type, well crystallized with a large grain size of several hundred nm, and a direct energy gap of 0.9-1.08 eV and have an absorption coefficient of 104-105 cm-1 before and after annealing, a carrier concentration of 1020-1021cm-3, and the highest carrier mobility of 10 cm2V-1s-1. Finally, CZTSe solar cell devices were built and its efficiency was measured. Due to the complicated steps for preparation, the performance of CZTSe solar cell devices needs to be improved.

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