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研究生： 王興筠
Hsing-Yun Wang
論文名稱： 濺鍍矽膜結構對低溫固態磊晶成長的影響及改善
The effect and improvement of α-Si film structure by sputtering in low temperature solid-phase epitaxial growth
指導教授： 王秀仁
Show-Ran Wang
口試委員: 張嘉男
none
趙良君
Liang-Chiun Chao
學位類別： 碩士
Master
系所名稱： 電資學院 - 電子工程系
Department of Electronic and Computer Engineering
論文出版年： 2008
畢業學年度： 97
語文別： 中文
論文頁數： 62
中文關鍵詞： 固態磊晶 、緻密性 、預先退火
外文關鍵詞： Solid phase epitaxy, densification, in situ heat treatment
相關次數： 點閱：276  下載：1 
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    • 針對使用DC做為電源的Sputter在(100)方向的矽晶圓上所沉積的非晶矽薄膜，以高溫爐600°C的退火方式，在充滿氮氣的環境之下對非晶矽薄膜進行固態磊晶成長，並且分別以R-HEED(反射式高能電子繞射)以及SEM (掃瞄式電子顯微鏡)觀察其退火之後的結果。在實驗過程當中，利用提高沉積溫度，以及利用磊晶前的預先退火，對Sputter所沉積的非晶矽薄膜改善其薄膜結構，提高緻密性，以拉塞福背向散射儀(RBS)測量此兩種方式對於非晶矽薄膜緻密性的改善效果，並且以Raman光譜儀檢測其結晶化性質。

    Solid phase epitaxial(SPE) growth of amorphous silicon(a-Si) films deposited onto (100) silicon substrates by DC-Sputter annealed at the temperature of 600 degrees centigrade with a furnace in a nitrogen environment. Furthermore, we used R-HEED (Reflection high-energy electron diffraction) and SEM(Scanning electron microscope) to observe the result after annealing. During the experiment, we improved the densification of a-Si films construction use raising the temperature of deposition and in situ heat treatment prior to SPE. Finally, we measured the effects of improvement with these two methods by RBS(Rutherford backscattering spectrometry) and the quality of epitaxial silicon film by Raman Spectroscopy.

    第一章 序 論 1-1 前言…………………………………………………1 1-2 磊晶原理……………………………………………2 1-3 磊晶矽沉積的發展…………………………………4 1-4 研究背景……………………………………………5 1-5 研究目標……………………………………………6 1-6 論文流程……………………………………………7 第二章 低溫固態磊晶成長 2-1 各種磊晶技術的分類及應用………………………8 2-2 低溫固態磊晶成長技術……………………………11 2-3 影響固態磊晶成長的因素…………………………12 2-4 本論文改善薄膜結構的研究方法…………………13 第三章 實 驗 3-1 實驗材料……………………………………………15 3-2 實驗設備……………………………………………15 3-3 電漿反應……………………………………………15 3-4 濺鍍原理……………………………………………18 3-5 實驗步驟……………………………………………19 3-6 提高沈積溫度對薄膜品質的影響…………………22 3-7 薄膜沈積結束之後的預先退火……………………28 第四章 實驗討論 4-1 高溫爐退火溫度對初鍍非晶矽薄膜磊晶成 長的影響……………………………………………35 4-2 RHEED觀察磊晶層結構………………………………38 4-3 薄膜與基板之間的界面長晶現象…………………41 4-4 RBS觀察提高沈積溫度以及磊晶前預先退 火對薄膜結構的影響………………………………49 4-5 結晶層的結晶性質…………………………………52 第五章 結論 5-1 結論…………………………………………………56 5-2 未來目標……………………………………………56 參考文獻…………………………………………………58

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