本論文使用InGaN/GaN多重量子井主動層結構磊晶在圖形化藍寶石基板的晶圓，製作兩種不同種類的光偵測器，第一種為p-i-n結構光偵測器，第二種為n-p-i-n結構光電晶體光偵測器，後者使用矽擴散的方式將最上層p-GaN反轉為n-GaN。光電晶體的優點是可以產生增益，得到更高的外部量子效率。
p-i-n光偵測器的元件在逆向偏壓0 V、1.56 V、3.15 V、4.71 V下，當逆向偏壓為3.15 V，在峰值的外部量子效率為45%左右，對應的響應率約為0.14 A/W，峰值波長為383 nm，入射光強度(Pin)為15.74 μW/cm2，其截止波長約為415 nm。n-p-i-n光電晶體光偵測器的元件在集極外加偏壓時(對PIN接面為逆向偏壓)，峰值波長為382 nm，入射光強度為15.55 μW/cm2，當逆向偏壓為1.56 V時，峰值的外部量子效率可以達到大於500%，對應的響應率大於1.8 A/W，可以偵測光對非偵測光拒斥比1000以上；當逆向偏壓為4.71 V時，峰值的外部量子效率更可以達到大於1800%，對應的響應率大於5 A/W，在峰值，截止波長約為415 nm。這代表我們使用InGaN/GaN多重量子井主動層結構成功製作了U V-A光電晶體光偵測器，可在低偏壓下得到相當高的響應率，這種設計是相當可行的。

We report on III-nitrid (III-N) phototransistor action by illuminating ultraviolet photons onto InGaN/AlGaN n-p-i-n heterojunction bipolar in an open-base configuration. And we also report on III-nitrid (III-N) photodector action by illuminating ultraviolet photons onto InGaN/AlGaN p-i-n heterojunction bipolar.
Our InGaN/AlGaN npin phototransistor used Silicon diffusion make p-GaN turns into n-GaN.Our phototransistor can get more gain and more external quantun efficiency.
P-i-n photodetector external quantun efficiency of 45% and responsivity of 0.14 A/W was measured for the device operationg at reverse bias 3.15V. Peakwavelength is 383 nm. Pin is 15.74 μW/cm2.
N-p-i-n phototransistor responsivity of > 1.8A/W was measured for the device operating at collector-to-emitter voltage (VCE) of < 1.56 V in the phototransistor mode.We can get more gain when reverse bias collector leads to a photocurrent as VCE increases. At λ =382 nm, the InGaN/AlGaN p-i-n phototransistor shows a responsivity of > 5 A/W at VCE = 4.71 V.
The the InGaN/AlGaN p-i-n phototransistor demostrates the feasibility of using III-N bipolar transistor stuctures and silicon diffusion for low bias and high-sensivity UV photodection applications.

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