時代不斷的進步，當前已由3D IC構裝取代傳統2D構裝。在3D IC構裝中，由垂直堆疊方式將多種晶片構裝於中，並利用軟銲方式使連接晶片-晶片端。當焊接過後，此銲點結構為Cu/Sn/Ni之三明治結構。然而本實驗將對Cu/Sn(5 m)/Ni、Cu/Sn(10 m)/Ni和Cu/Sn(15 m)/Ni之反應偶在250oC迴焊1、3和5分鐘並在180oC時效至300小時之界面反應探討，然而由實驗結果得知可分為兩個部份；在相同迴焊條件下：隨著Sn層厚度增加，其Sn層完全消耗之時效階段也隨之增加；但在相同迴焊3與5分鐘隨Sn層厚度增加，發生相轉變時間越晚，反之在迴焊1分鐘並未出現此現象；然而在相同迴焊1分鐘下，此Cu3Sn厚度隨Sn層厚度增加而減少，但在迴焊3與5分鐘其Cu3Sn相之厚度均差不多。在相同Sn層厚度下：隨著迴焊時間增加，其Sn層消耗之時效階段越早且相轉變階段提早，但當Sn層厚度為15m並未出現此現象；然而Cu3Sn相之厚度隨著迴焊時間增加而減少。就整體來看，此Cu3Sn相之厚度隨著時效時間增加而增加且在經過時效300小時之後並未發現Ni原子擴散至Cu3Sn相中，因此推測(Cu, Ni)6Sn5相為Ni原子擴散至Cu3Sn相之擴散阻障層。

The 3-D IC electrical packaging instead of 2-D traditional electrical packaging as the technique continuous improve with times. In 3-D IC electrical packaging system, used the vertical chip stacking technique, which allow the multiple chips placed the system, and use the soldering to connect between chip and chip. The solder joint is Cu/Sn/Ni sandwich structure after soldering process. The experimental purpose prepared the three different couples; the Cu/Sn(5 m)/Ni, Cu/Sn(10 m)/Ni and Cu/Sn(15 m)/Ni. During reflowed at 250oC for 1, 3 and 5 min., and then aged at 180oC until to 300 h. Observed to the interface reaction. The results attributed to 2 parts; at the same reflowed condition, the aged stage of consumed completely of Sn layer increase with the thickness of Sn layer increased; at reflowed for 3 and 5 min., if the thickness of Sn layer increased, the phase transition occurred lately, but reflowed for 1 min. did not occurred lately; at reflowed for 1 min., the thickness of Cu3Sn increase with the thickness of Sn layer increase, but the thickness of the Cu3Sn almost at reflowed for 3 and 5 min.. At the same thickness of Sn layer, the aged stage of consumed completely of Sn layer and the phase transition time will earlier with increase the reflowed time, but the Cu/Sn(15 m)/Ni couples did not occurred this phenomenon; the thickness of Cu3Sn decrease with increasing the reflowed times. Summary, the thickness of Cu3Sn increase with increasing aged times and we didn’t find the Ni atom in Cu3Sn during aged process at 300h, so the (Cu, Ni)6Sn5 was the diffusion layer for the Ni atom diffuse to Cu¬3Sn.

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