以離子濺鍍法，在沈積氧化鋅薄膜同時，除了通入氬氣作為轟擊靶材之離子源，也直接加入氮氣，可將氮摻雜到氧化鋅薄膜，形成摻氮氧化鋅(ZnO:N)。以XRD分析成長溫度為300C之摻氮氧化鋅薄膜中只有氧化鋅(002)繞射峰值位於34.40°，可知薄膜結構延著C軸成長。剛成長完之摻氮氧化鋅薄膜存在著表面應力，退火至500 ~ 600C則為無應力情況(stress free condition)。隨退火溫度的增加，得知薄膜有再結晶的情況。剛沈積結束的摻氮氧化鋅表面粗糙度為3.6 nm，明顯地高於無摻雜氧化鋅表面粗糙度0.8 nm。從未退火到退火800C之摻氮氧化鋅薄膜，其表面粗糙度大約從3.6升到6 nm。使用拉曼光譜分析可得到275、436、582及640 cm-1此四種峰值，證明氮已掺入氧化鋅薄膜中。在退火溫度越高的情況下，275、582及640 cm-1峰值逐漸消失，而436 cm-1峰值逐漸明顯，氮則離開了氧化鋅薄膜。而在氧氣或氬氣氛中退火至800C，摻氮氧化鋅薄膜之缺陷比值將會減低許多，表示產生氧缺陷的情況較低。

Nitrogen doped ZnO (ZnO:N) thin films were prepared by reactive ion beam sputtering deposition utilizing a capillaritron ion source at 300C. XRD analysis indicates that the as-deposited ZnO:N exhibits a single (002) diffraction peak at 34.40. Annealing at 500 ~ 800C causes the stress of the film changes from strain to compressive stress. The surface root mean square roughness of ZnO:N is 3.6 nm, higher than that of un-doped ZnO which is 0.8 nm. Micro Raman spectroscopy analysis of the as-deposited film shows strong nitrogen related local vibration mode at 275, 582 and 640 cm-1, while the E2 mode of ZnO at 436 cm-1 can barely be identified. Annealing at 500 ~ 800C causes decrease of 275, 582 and 640 cm-1 and increase of 436 cm-1 intensity, indicating out diffusion of nitrogen and improvement of ZnO crystalline quality. The surface roughness of ZnO:N increases from 3.6 to 6.0 nm after annealing which is attributed due to out diffusion of nitrogen. Photoluminescence study of ZnO:N shows a near-band-edge emission (NBE) centered at 3.25 eV and a broad band defect related deep level emission centered at 2.2 eV. The ratio of the integrated deep level defect emission Idefect to that of integrated NBE emission INBE reaches a minimum after annealing at 800C in flowing oxygen ambient. P-type ZnO:N may be achieved by finding an optimized annealing condition between out-diffusion of nitrogen and reducing oxygen vacancy defect densities.

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