本論文的實驗採用分子結構類似TEOS的含碳氫氟長鏈和矽氧烷分子先驅物十三氟-1,1,2,2-四氫辛烷基-三乙氧基矽烷 (tridecafluoro-1,1,2,2-tetrahydrooctyl-triethoxysilane,TDF-TEOS)，利用先驅物TDF-TEOS和稀釋氧氣，配合平板式電漿輔助化學氣相沉積系統成長低介電係數薄膜。
由FTIR圖譜量測出Si-F和C-F的吸收，顯示薄膜除了氧化矽之外確實摻入矽氟/碳氟鍵結。由XPS組成比例可以發現在175℃及6W的電漿功率下，隨著氧氣添加時，可獲得碳-碳、碳-氟鍵結為主體到以矽氧鍵結為主體的薄膜，其所對應出的介電係數為2.4到2.8。當提高電漿功率由6W到30W時，則介電係數由2.8增大到約4.0。薄膜附著力方面，本實驗量測的薄膜附著特別是在電漿功率30W、基材溫度175℃、氧氣流量1.0 sccm 下的薄膜其附著力高達282牛頓與二氧化矽的298牛頓相差不遠，顯示薄膜膜有很好的附著力。

The TEOS-like precursor, TDF-TEOS, featured with a long-chain fluoroalkyl group in place of an alkoxyl group, grows low dielectric constant films using TDF-TEOS and dilute oxygen by a conventional- parallel-plate PECVD system.
From FT-IR absorbance spectra of the film, we can see that components of Si-F and C-F are incorporated in the films in addition to the Si-O components. The XPS atomic ratio at 6W、175℃ and increasing dilute oxygen flow rate from 0.2 sccm to 1.0 sccm, the films obtain main structure from C-C and C-F bonds to Si-O bonds. According to the films that the dielectric constant is from 2.4 to 2.8 . When the plasma power increases to 30W, the k value increases from 2.8 to 4.0 . The adhesion test of the films deposited at 30W、175℃、1.0 sccm , the adhesion force is 282 N that is equal to SiO2 ( 294 N )films.

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