焦電薄膜感測器是以溫度變化產生焦電訊號。本文分別使用三種射頻源功率90W、120W及150W進行單階段濺鍍氧化鋅焦電薄膜，及此三種射頻源功率構成六種組合以雙階段的濺鍍技術沈積氧化鋅焦電薄膜。氧化鋅焦電薄膜感測器主要利用微機電製程製作，其中包含背面蝕刻窗型孔；以LPCVD來沈積氮化矽隔熱層；電子束蒸鍍機沈積上下電極層；及濺鍍機沈積氧化鋅焦電薄膜。然而，氧化鋅薄膜之特性是為關鍵因素將能量轉換成焦電訊號。因此探討氧化鋅薄膜的機械性質、結晶構造及表面型態以改善氧化鋅焦電薄膜感測器之響應則是本文研究重點。
以部份電極來覆蓋焦電層的焦電感測器已證實比完全覆蓋電極的焦電感測器有優良之焦電響應，主要因未被覆蓋的焦電感測器中，裸露之氧化鋅薄膜有助於增加吸收外在能量。且以部份電極所製成的焦電感測器可方便探測氧化鋅薄膜機械性質及表面形貌。量測方式主要以氦氖雷射，搭配斷波器控制紅外線的頻率，來量測焦電感測器的電壓響應，並使用X射線繞射儀(XRD)以及掃描式電子顯微鏡(SEM)，來探討氧化鋅薄膜的晶體結構及表面形貌，再以奈米壓痕儀來檢測氧化鋅薄膜的機械性質。
氧化鋅焦電薄膜感測器所量測之電壓響應與上電極形狀、氧化鋅薄膜表面形貌、焦電係數、機械性質(硬度與彈性係數)及晶格結構有絕對關聯性。雙階段濺鍍氧化鋅薄膜中，以試片2 (120W+150W)的電壓響應最為優異且有較好c-axis取向之結晶結構，而單階段濺鍍氧化鋅薄膜中，以試片8 (120W)的電壓響應最為優異及較佳結晶結構。奈米壓痕實驗中，對於單階段濺鍍氧化鋅薄膜之機械性質與感測器之電壓響應有絕對之相關性。於裸露氧化鋅上鍍鎳增加吸收率，鍍鎳試片比未鍍鎳試片，在高頻率時明顯擁有較好電壓響應。

Thin-film ZnO pyroelectric sensors use the pyroelectric effect to convert temperature variation to corresponding electrical signal. A two-step radio frequency (RF) sputtering deposition technique for ZnO films formation applied on pyroelectric sensors was presented. The three varied RF powers as 90W, 120W and 150W were used to deposit ZnO films for single step RF sputtering and construct six different processing alternatives for two-step RF sputtering ZnO films. The ZnO pyroelectric sensors were fabricated by procedure of MEMS fabrication included backside-etching windows, isolation layer of silicon nitride deposited by LPCVD, top and bottom electrodes deposited by e-beam evaporator, and sputtering ZnO thin films. Then, the characteristics of ZnO thin films were critical element to generate the pyroelectric signals when incident energy was applied to sensors. The interaction among fabrication of ZnO pyroelectric sensors, morphology, crystal structures and mechanical properties of ZnO thin films to improve the responsivity was presented in this study.
Pyroelectric sensor with partially covered electrode (PCE) has been proved to reveal higher responsivity than that with fully covered electrode. The uncovered ZnO thin film directly exposes surface to increase the absorption of incident energy in PCE pyroelectric sensor, which provides a convenience to probe the characteristics of ZnO thin films. A He-Ne laser as IR radiation source with a chopper at a modulated frequency was used to measure the responsivity of pyroelectric sensors. An X-ray diffractometer (XRD) and scanning electron microscopy (SEM) were used to investigate the crystal structures and the morphology of the ZnO films. The nanoindenter was used to probe the mechanical properties of ZnO thin films.
The results of current work presented that the voltage responsivity of ZnO pyroelectric sensors was related to the shape of top electrode, the morphology, pyroelectric coefficient, crystal structures and mechanical properties (hardness and elastic modulus) of ZnO thin films significantly. The voltage responsivity of ZnO pyroelectric sensors was presented high performance in Sample 2 (120W+150W) and Sample 8 (120W) for the two-step and the single RF ZnO sputtering technique respectively due to the ZnO films possessed the growth characteristic of strongly preferred orientation toward the c-axis. The mechanical properties of ZnO films sputtered by the single step RF ZnO sputtering technique was related to the voltage responsivity of ZnO pyroelectric sensors. The Ni layer deposited on ZnO films was obvious to increase the optical absorption and the voltage responsivity of ZnO pyroelectric sensors in high frequency region.

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