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| 研究生： |
黃俊凱 Chun-Kai Huang |
|---|---|
| 論文名稱： |
基於自我修復的NAND型快閃記憶體之資料恢復快閃記憶體轉換層 A Data Restoration Flash Translation Layer for Self-Healing NAND Flash Memory |
| 指導教授： |
吳晋賢
Chin-Hsien Wu |
| 口試委員: |
吳晋賢
Chin-Hsien Wu 陳維美 Wei-Mei Chen 謝仁偉 Jen-Wei Hsieh 阮聖彰 Shanq-Jang Ruan |
| 學位類別： |
碩士 Master |
| 系所名稱： |
電資學院 - 電子工程系 Department of Electronic and Computer Engineering |
| 論文出版年： | 2017 |
| 畢業學年度： | 105 |
| 語文別： | 英文 |
| 論文頁數： | 40 |
| 中文關鍵詞： | 快閃記憶體 、自我修復 、快閃記憶體轉換層 |
| 外文關鍵詞： | flash memory, self-healing, flash translation layer |
| 相關次數： | 點閱：245 下載：8 |
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自我修復NAND型快閃記憶體是近年被提出的新硬體技術，相對於傳統NAND型快閃記憶體經過多次讀寫而造成的寫穿狀態，自我修復NAND型快閃記憶體可以透過高溫使電子離開隧道氧化物讓電晶體可以重新儲存電子解除寫穿狀態；雖然高溫能夠恢復電晶體的狀態，但在現今材料科學的製程中，電晶體僅能承受約攝氏250度，加上自我修復的操作需要一定的時間而可能阻擋快閃記憶體內部其他操作造成效能降低，因此我們提出了一種基於自我修復的NAND型快閃記憶體之資料恢復快閃記憶體轉換層，並以此轉換層來解決因為恢復操作而無法進行存取特定資料的問題。
Self-Healing NAND flash memory is an interesting hardware technology in recently years. It has ability to recover the transistor which was worn-out due to repeatedly writes and erases. It needs to use high-temperature to heat the transistor and let the electron left the tunnel oxide by getting energy. Unfortunately, the more quickly you want to recover the transistor, the higher temperature you have to heat the transistor which can only endure about 250℃. Furthermore, healing operations in flash memory may block the normal requests and can degrade the performance. Therefore, we propose a data restoration flash translation layer for self-healing NAND flash memory. The objective of the thesis is to avoid the problem that data in NAND flash memory cannot be accessed due to the healing operations.
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