因本實驗室所建立的線上光學檢測系統於準分子雷射退火矽膜所擷取之反射率與穿透率波形，如能利用TEM斷面分析互相驗證，並觀察矽膜退火後之微結構變化將能更確定矽膜的成長機制，也間接肯定其系統的正確性，故本研究將試片進行退火後再運用TEM進行分析與探討。另外因鍺膜比矽膜有較高之載子移動率，因此以準分子雷射退火鍺膜後再運用線上光學檢測系統，可即時檢測出非晶鍺薄膜於準分子雷射退火期間反射率與穿透率之變異性，進而分析相關物理現象和量測鍺膜融化時間；此外本研究亦透過線上光學檢測系統搭配不同吸收係數之半透光膜熱滯留層SiON，以分析不同參數對於鍺膜再結晶特性之影響性。研究結果發現，吸收係數的增加會使鍺膜的雷射退火能量增高、融化時間提高，晶粒尺寸亦可從1 μm成長變大可達10 μm，且結晶品質亦可隨著晶粒尺寸成長而變好，但晶粒尺寸的增加必須搭配適當的吸收係數。線上光學檢測系統可量測與分析準分子雷射退火鍺膜之再結晶特性和量測鍺膜融化時間，因此可以容易製作大粒徑之多晶鍺以及提高其製程良率。

An in-situ real-time time-resolved optical reflectivity and transmissi vity (TRORT) monitoring system combining two CW He-Ne laser, a fast digital oscilloscope and three photodiodes is developed for monitoring the melt-phase duration and examine the melting and crystallization behavior during XeF excimer laser annealing(ELA) and use Transmission Electron Microscopy(TEM) to analyze crystallization mechanisms of poly-Si in this study.

We use ELA to crystallize amorphous germanium on difference absorption coefficient film(SiON).The grain size of germanium will increase to 10 μm. The grain size measurement of difference absorption coefficient film is compared and the germanium is different in melt-phase duration.The grain size is judged must match in melt-phase duration and absorption coefficient of SiON films.

Using TRORT system can examine the melting and crystallization behavior, and measure the melt-phase duration. This technique provides a simple approach for fabrication large-grained poly-Ge during ELA and enhances the high yield during in-line large area flat panel displays fabrication.

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