利用量子井混合技術結合雷射與電致吸收調變器，使其能運用在高速傳輸系統為本論文主要的研究方向。主動層材料選用為磷砷化銦鎵(InGaAsP)為主的量子井結構，經過摻植輔助內部擴散來改變量子井主動層的能隙，並分析在不同條件下，對內部擴散的影響。
在原理部份，模擬內部擴散後主動層能帶變化，觀察圓弧形量子井的波函數偏移趨勢，並且針對主動層材料進行特性模擬，最佳化量子井厚度。
在實驗方面，分別在700℃及750℃熱退火後，進行光激發螢光量測。由實驗結果得知，峰值波長偏移量最多可達80 nm左右之藍位移。歸納出最佳條件後，實際運用在電致吸收調變器雷射上，將雷射與調變器積體化，利用量子井混合技術產生65nm藍位移，並獲得初步實驗結果。

We integrate DFB laser and electroabsorption modulator by using the quantum well intermixing(QWI) technique for application in high speed transmission system. The active region is InGaAsP based quantum well structure. We utilize the impurity-induced inter-diffusion technique to change the bandgap of the active region and analyze the diffusion effect for different annealing conditions.

We simulated the change of bandgap in the active region after appling the QWI technique. We observe the trend of wave-function change in the parabolic well. The active region material characteristics are analyzed to optimize the quantum well width.

We measure the photoluminescent spectrum after the annealing at 700℃and 750℃, respectively. The shift of peak wavelength up to 80 nm is observed. After this investigation, we choose 65 nm of blue shift from the QWI to realize the electron-absorption modulated laser. The fabrication procedures and preliminary experimental results are demonstrated.

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