近年來，在室溫下進行批式法合成全無機銫鉛鹵素鈣鈦礦量子點(CsPbX3 QDs, X=Cl/Br/I)可以達到高螢光量子效率。然而，在室溫下進行全無機銫鉛鹵素鈣鈦礦量子點的批式放大製程時，其螢光量子效率會有偏低現象。因此在本次研究中，將以 微流道晶片 進行放大製程研究，以期能合成出高螢光效率的全無機銫鉛溴鈣鈦礦量子點。根據分析出來的結果可得知：利用 微流道晶片 進行放大製程所製備出的溴化銫鉛鈣鈦礦量子點的螢光量子效率高於批式放大反應器所製備出的溴化銫鉛鈣鈦礦量子點。此外，將陰離子置換反應套用在 微流道晶片 也可製備出高螢光效率的溴碘化銫鉛鈣鈦礦紅光量子點。在本次研究中，透過 微流道晶片進行放大製程所製備出的溴化銫鉛鈣鈦礦量子點與溴碘化銫鉛鈣鈦礦量子點的螢光量子效率分別為 87%與 64%。然而，在篩選粒徑大小的過程中伴隨著產物流失情形發生，因此透過水處理優化程序將原先因粒徑過大而被去除的 CsPbX3晶體進行回收，使其生產效率提升。因此透過水處理優化程序作為提升產率的方法。此外，為了改善銫鉛鹵素鈣鈦礦量子點的穩定性，在溴化銫鉛鈣鈦礦量子點與溴碘化銫鉛鈣鈦礦量子點外圍添加二氧化矽無機層，作為阻隔外界水氣及氧氣的阻擋層，進而提升銫鉛鹵素鈣鈦礦量子點粉體的穩定性。之後，再將二氧化矽包覆溴化銫鉛鹵素鈣鈦礦量子點粉體的穩定性。之後，再將二氧化矽包覆溴化銫鉛鈣鈦礦鈣鈦礦量子點粉體與二氧化矽包覆溴碘化銫鉛鈣鈦礦量子點粉體進行混量子點粉體與二氧化矽包覆溴碘化銫鉛鈣鈦礦量子點粉體進行混合於合於聚甲基丙烯酸甲酯聚甲基丙烯酸甲酯並製成為光轉換層。將此光轉換層置在激發波段並製成為光轉換層。將此光轉換層置在激發波段為為460奈米奈米的氮化銦鎵藍光二極體晶片上，可的氮化銦鎵藍光二極體晶片上，可獲得接近自然白光。當驅獲得接近自然白光。當驅動電壓施加動電壓施加2.5 V時，其發光效率為時，其發光效率為39 lmW--1，輝度為，輝度為2973 cdm--2，色溫，色溫為為4800 K。。其白光件的再現性佳其白光件的再現性佳，，且色域可達且色域可達119% NTSC標準標準。

Recently, all inorganic cesium lead halide (CsPbX3, X=Cl, Br, I) quantum dots (QDs) could achieve high photoluminescence quantum yield (PL QY), which were synthesized by batch type process in room temperature. However, PL QY of inorganic cesium lead halide quantum dots synthesized by massive batch type process is low. Therefore, micro fluidic channel chip design was employed for massive production of high PL QY CsPbBr3 QDs. According to analysis results, we could know that PL QY of CsPbBr3 QDs synthesized via micro fluidic channel chip is higher than that via massive batch type process. In addition, red emission CsPb(Br/I)3 QDs with high PL QY could also be prepared by micro fluidic channel chips with anion exchange process. In this study, PL QY of CsPbBr3 QDs and CsPb(Br/I)3 QDs synthesized by micro fluidic channel chips could achieve 85% and 64%, respectively. However, the production rate for CsPbX3 QDs synthesized by micro fluidic channel chip is low. Therefore, water post treatment was employed to improve the production rate for CsPbX3 QDs. In addition, the improvement of CsPbX3 QDs stability was also studied. Inorganic silica (SiO2) shells were employed to enclose on the outer surfaces of CsPbX3 QDs as barrier layer for avoiding the influence of humidity and oxygen. In the next, CsPbBr3/SiO2 and [CsPb(Br/I)3]/SiO2 powders were blended together to mix with poly (methyl methacrylate) (PMMA) as light convert layer. Combing the light convert layer with blue indium gallium nitride (InGaN) light emitting diode (LED) chip with 460 nm, a white light could be obtained. The characteristics of white light emission were luminous efficiency=39 lmW 1, luminance=2973 cdm 2, color temperature=4800 K under 2.5 V. The reproducibility of white light emitting is good and the color gamut could achieve 119% NTSC standard.

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