現今，二維原子級薄膜奈米材料的結合是相當重要的發展趨勢，特別是二維材料的異質接面更是目前新興發展重點。本計畫致力於將同為二維材料的石墨烯與過渡金屬硫化物做異質接面的結合並深入探討其接面特性，應用於二極體元件。石墨烯為目前最薄二維結構材料，此材料擁有良好的熱導電性及高載子遷移率等特性。本計畫以熱化學氣相沉積法方式，利用甲烷作為碳源成長石墨烯於銅箔基板上，可隨著銅箔基板的大小控制其尺寸，成長出具有高品質且大面積的石墨烯，並藉由摻雜方式可精準控制石墨烯費米能階，使石墨烯由零能隙材料轉變為具有能隙的p型或n型半導體材料。利用石墨烯具有高比表面積、高載子遷移率及超薄的特性可與n型材料結合製作pn接面。另一方面，類石墨烯的過渡金屬硫化物薄膜則是目前半導體材料的發展潛力，單層過渡金屬硫化物厚度與石墨烯相近，是具有良好的機械強度與高載子遷移率的n型半導體材料，利用化學氣相轉換法成長單晶過渡金屬硫化物(二硫化鉬及二硒化鉬)塊材，並以機械剝離法控制材料厚度，過渡金屬硫化物厚度越薄則能隙越大。結合兩者特性，製作異質接面二極體元件，藉由改變兩種材料的能隙控制其障壁電位。結合兩種材料優點，製作超薄且高靈敏度異質pn接面，並進一步封裝異質接面二極體元件，整理歸納其量測資料庫，深入研究二維材料延伸應用，對我國半導體產業必有良好貢獻。

The two-dimensional nano-material heterojunction combination has recently become an important trend in component development. In this project we combine (I) MoS2 and graphene and (II) MoSe2 and graphene (both two-dimensional materials) to produce a heterojunction and exhaustively study the interface property for heterojunction diode applications. Graphene is presently the thinnest two-dimensional material with good thermal conductivity and high carrier mobility. We used CH4 as the carbon source to grow high quality, large-area graphene onto a copper foil substrate. The graphene size was controlled using thermal chemical vapor deposition. The graphene Fermi level can be precisely controlled using the oxygen adsorption. Graphene can be tuned from zero-gap to p-type semiconductor material using the amount of adsorbed oxygen. MoS2 and MoSe2 films are currently the semiconductor materials with the most potential. Few-layer MoS2 (MoSe2) is an n-type semiconductor that has good mechanical strength, high carrier mobility, and has similar thickness as graphene. The MoS2 (MoSe2) band-gap increases with decreasing thickness when the chemical vapor transport method is used to grow bulk single-crystal MoS2 (MoSe2) with mechanical exfoliation to control the material thickness. Heterojunction diode components can be fabricated by combining the properties of MoS2 and graphene. The potential barrier can be controlled by. Combining the advantages of these two materials, we fabricated ultra-thin hetero pn junction and grouped the measured data into the database. Any in-depth study of two-dimensional material extended applications will contribute to the semiconductor industry.

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