本研究乃以實驗室組裝之感應耦合電漿(ICP)反應系統來低溫氧化4H碳化矽晶片以製備閘極介電層。實驗上，以連結反應腔體至X射線光電子能譜儀(XPS)測量腔體，達到階段氧化後可不需暴露試片於大氣即可進行氧化表面鍵結變化的探討。
實驗結果顯示，選擇氬/氧(Ar/O2)混合氣體流量比為9:1、ICP電漿功率為50W、總壓為270 mTorr之電漿放電條件下，初期10分鐘內碳化矽的氧化速率約為0.28 Å/min;之後呈現較慢的0.12 Å/min。又當氧化時間增加到90分鐘時，試片表面XPS Si 2p鍵結訊號已經由原本的SiC鍵結位置幾乎完全轉化為峰值為104.3 eV 的SiO2鍵結，此時氧化層厚度約達1.2奈米。這表示使用 Ar/O2-ICP電漿氧化碳化矽時，SiC過渡到SiO2之界面中間層厚度遠小於一般熱氧化製程的5奈米，即低溫ICP電漿氧化法確實可獲得氧化轉化較陡峭的4H-SiC/SiO2界面。

In this study, an inductively coupled plasma (ICP) reaction system was assembled to oxidize 4H-SiC wafers at low temperatures to produce gate dielectric layers. Experimentally, the reaction chamber was connected to an X-ray photoelectron Spectrometer (XPS) for direct measurement of the oxidized surface of the sample without exposure to the atmosphere.
The experimental results showed that the oxidation rate of silicon carbide in the first 10 minutes was about 0.28 Å/min; after that, it slowed down to 0.12 Å/min under a gas mixture ratio of argon/oxygen (Ar/O2) = 9:1, an ICP plasma power of 50 W, and a total pressure of 270 mTorr. When the oxidation time was increased to 90 minutes, the XPS Si 2p binding signal of the sample completely converted from SiC binding energy to SiO2 binding energy at 104.3 eV. At this time, the thickness of the oxide layer was about 1.2 nm. This means that the thickness of the intermediate layer for the transition from SiC to SiO2 is much smaller than that of the general thermal oxidation process (usually>5 nm) when using the Ar/O2-ICP process. That is, the low-temperature ICP plasma oxidation method can obtain a 4H-SiC/SiO2 interface with a steeper oxidation conversion distribution.

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