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研究生： 陳建州
Chien-Chou Chen
論文名稱： 矽厚膜之準分子雷射結晶化與其在薄膜太陽能電池之應用
Excimer Laser Crystallization of Thick Si Films and Its Application to Poly-Si Thin-Film Solar Cells
指導教授： 葉文昌
Wen-chang Yeh
口試委員: 李奎毅
K-Y Lee
黃鶯聲
Y-S Huang
學位類別： 碩士
Master
系所名稱： 電資學院 - 電子工程系
Department of Electronic and Computer Engineering
論文出版年： 2007
畢業學年度： 95
語文別： 中文
論文頁數： 57
中文關鍵詞： 多晶矽 、橫向長晶 、準分子雷射 、薄膜太陽能電池
外文關鍵詞： Poly Silicon, Lateral Growth, Excimer Laser, Thin-Film Solar Cells
相關次數： 點閱：320  下載：1 
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    • 本研究探討準分子雷射結晶化矽厚膜可行性，並以此膜製作薄膜太陽能電池。研究發現，雷射退火矽膜之最高厚度為700 nm，並出現完全溶化之碟狀結晶(Disc grain)。利用SLS法後可再室溫下產生7 μm之橫向長晶長度，以此技術製作P＋ P N二極體，n值為3.37，ON/OFF=20。

    In this research,we discuss the Excimer Laser Crystallization of thick Si films, and we manufacture the Poly-Si Thin-Film Solar Cells by this film. In the research, we can find the crystallization by Excimer laser
    of 700nm Si film.And the complete melting characteristic is Disc grain.
    We can produce lateral growth length about 7um by SLS.Finally we use this film to manufacture P+ P N diode. n =3.37 , ON/OFF=20.

    第一章 序論 1-1 前言……………….……………………………… ﹝1﹞ 1-2 準分子雷射退火原理…………………………….火………….……………………………… ﹝4﹞ 1-3 連續性橫向長晶( Sequential Lateral growth)…… Solidfication, SLS)………………….. ﹝7﹞ 1-4 研究背景………….……………………………… ﹝8﹞ 1-5 論文流程………….……………………………… ﹝9﹞ 第二章 矽厚膜結晶技術 2-1 前言……………….……………………………… ﹝10﹞ 2-2 實驗方法………….……………………………… ﹝11﹞ 2-2.1 基板清洗…………………………………………. ﹝11﹞ 2-2.2 結構沉積....................…...……………………….. ﹝12﹞ 2-2.3 準分子雷射退火..................................................... ﹝14﹞ 2-3 實驗結果................................................................. ﹝14﹞ 2-3.1 SLG Disc-Grain結晶技術...................................... ﹝14﹞ 2-3.2 Porous結構結晶技術.............................................. ﹝17﹞ 2-3.3 SLG橫向長晶技術................................................. ﹝22﹞ 2-4 本章結論................................................................. ﹝28﹞ 第三章 多晶矽薄膜太陽能電池元件製作…………………... ﹝29﹞ 3-1 前言……………….……………………………… ﹝29﹞ 3-2 實驗方法………….……………………………… ﹝30﹞ 3-2.1 太陽能電池正面照光結構製作............................. …...…………………………………….. ﹝30﹞ 3-2.2 太陽能電池背面照光結構製作…………………. ﹝34﹞ 3-3 本章結論………….……………………………… ﹝39﹞ 第四章 多晶矽薄膜太陽能電池元件製作之二........... ﹝40﹞ 4-1 實驗方法…………………………………………. ﹝40﹞ 4-2 實驗結果…….…………………………………… ﹝42﹞ 4-2.1 P-type Si層高溫爐結構製作……………………. ﹝42﹞ 4-2.2 P-type Si層雷射退火結構製作…………………. ﹝44﹞ 4-3.3 N P P+ 三層雷射退火結構製作............................射……….………………………… ﹝49﹞ 4-4 本章結論…….…………………………………… ﹝55﹞ 第五章 結論………………………………………………….. ﹝56﹞ 參考文獻………………………………………………………. ﹝57﹞

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