近年來，研究人員紛紛投入CIGSe太陽能薄膜電池真空製程的研究中，而真空製備的方法眾多，主要分為蒸鍍與濺鍍製程，本實驗使用真空濺鍍製程當作主要製程。目前高效率的製程多屬於共蒸鍍系統，最高可達到20%以上，但由於CIGSe薄膜於製備時，Ga元素容易產生組成分佈不均現象，故本實驗室經過系統的研究，綜合金屬相晶粒比較大顆與陶瓷相組成比較穩定的優點，製備出陶瓷與金屬複合的靶材Cu-Ga-In2Se3(簡稱為陶金靶)，以防止Ga組成分佈不均的現象，並保有較佳的薄膜表面形態與緻密性。
本實驗是利用陶金靶濺鍍一層CIGSe前驅物薄膜，控制組成保有金屬相與陶瓷相，再經由二階段硒化反應，改善CIGSe薄膜元素Ga組成分佈不均的問題，並搭配不同濺鍍溫度及硒化溫度，欲得到Cu0.9In0.7Ga0.3Se2薄膜，最後藉由FE-SEM、XRD、EDS分析與霍爾電特性量測，探討薄膜的物理性質。最後利用Cu0.9In0.7Ga0.3Se2作為吸收層來製備太陽能電池元件，元件堆疊方式如下：Na玻璃/Mo(DC，800 nm)/CIGSe(DC，2μm)/CdS(CBD，70nm)/i-ZnO(RF，50 nm)/ITO(RF，500 nm)/退火/Ag，之後利用擬太陽能光測試儀器測試其電池之轉換效率。
實驗結果顯示，使用陶金靶前驅物薄膜分別進行一階段與二階段600 oC硒化持溫1小時後，所製備的CIGSe薄膜。其薄膜晶粒最佳尺寸約為1 μm~2 μm，而經由XRD及EDS分析都可以證明此薄膜為黃銅礦結構，並具有Cu0.9In0.7Ga0.3Se2組成比例。將此參數製備成元件，分別量測出0.42%及0.55%的光電轉換效率。

In recent years, the vacuum processes for making Cu(In,Ga)Se2 (CIGSe) thin-film solar cells are gradually getting researchers’ attentions. There are many ways for vacuum processes. Evaporation and sputtering process are the most commonly used. In this experiment, we used sputtering vacuum process as our major process. At present, CIGSe solar cells with power conversion efficiency more than 20% have been made by co-evaporation process. When CIGSe films were prepared by metallic targets, there was a problem of Ga distribution. To overcome the Ga-distribution problem, the (Cu-In2Se3-Ga) target was used with the combined advantages of metallic target for larger deposited grains and the ceramic target for better phase stability. With these efforts, CIGSe films are expected to be dense and smooth and have a uniform composition distribution.
In this study, CIGSe absorption layers for thin-film solar cells were deposited by using DC-sputtering with the cermet targets on sodium lime glass substrates, followed by a two-step selenization procedure. The cermet targets formed the films containing ceramic and metallic phases. With the cermet method, the problem of Ga distribution was solved. The variations of materials performance and properties for CIGSe films with sputtering and selenization temperatures were investigated with the aids of FE-SEM, XRD, EDS, and Hall effect measurement. The CIGSe solar cell devices were constituted with the stacking form of Na glass/ Mo/CIGSe/CdS/ZnO/ITO/Ag. The power conversion efficiency of the solar cell device is evaluated under the standard AM 1.5 illumination.
The experimental results showed that the CIGSe films obtained with the (Cu-In2Se3-Ga) target followed by a two-step selenization process at 600 oC for 1 h were dense and had the desired composition and the grain size of 1-2 μm. The stacked solar cell devices displayed the power conversion efficiencies of 0.42% and 0.55% for the cells with the CIGSe absorption layers after one-step and two-step selenization processes, respectively.

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