ㄧ維(1D)的過渡金屬氧化奈米結構藉由自我催化組成的方式製備，受到了廣泛的研究。奈米線具高的深寬比結構，大的表面體積比與獨特的物理性質，包含光學、磁學與電學特性。氧化鎢(W18O49)為一N型的寬能隙半導體，由於它獨特的物理及化學特性，使氧化鎢相當有潛力應用在不同的科技領域上，例如半導體氣體感測器、光觸媒、太陽能元件、電致色變元件與場發射元件等。
本論文旨在探討氧化鎢奈米線經過不同後處理技術其特性分析。實驗首先以真空直流濺鍍的方式濺鍍純鎢薄膜，利用熱化學氣相沉積系統對純鎢薄膜進行30分鐘700 °C的熱處理，氧化鎢(W18O49)奈米線即合成於矽基材上。接著以射頻電漿與微波電漿對最佳化成長之氧化鎢奈米線進行電漿表面改質後處理，以準分子雷射系統對氧化鎢奈米線進行退火後處理，藉由場發射電子顯微鏡觀察氧化鎢奈米線的表面形態，並分別利用X-ray繞射儀與拉曼光譜儀分析奈米線晶格結構以及奈米線表面鍵結組成，透過電子光譜儀分析奈米線吸收峰的位置與強度作材料定性與定量之參考，並量測氧化鎢奈米線的電流變化，以探討氧化鎢奈米線的電性特性。
此論文的實現方面，成功地製作氧化鎢奈米線雙層結構(W18O49/W18O49/Si)與氧化鎢奈米線鑽石薄膜複合結構(W18O49/NCD/Si)，藉由奈米複合結構上的不同，能夠改變其光電特性，增益其場發射特性。進一步結合奈米壓印微影技術製作陣列式氧化鎢奈米線，期望讓氧化鎢相關應用元件上能有效地提高效率，以提供給產業界新的材料與製程技術和方向，作為將來開發奈米線光電元件之研究基礎。

One-dimensional (1D) transition metal oxide nanostructures prepared via self-catalytically technique have attracted considerable interest due to their high aspect-ratio structure, large surface-to-volume ratio, and unique physical properties, including optical, magnetic, and electronic characteristics. Tungsten oxide (W18O49) is an n-type wide band semiconductor with interesting physical and chemical properties that make it suitable for various technological applications.
In this work, the tungsten films were first deposited on silicon substrate by the reactive DC magnetron sputtering system. The tungsten oxide (W18O49) nanowires were synthesized self-catalytically on silicon substrate in quartz tube furnace with a temperature of 700 °C in nitrogen ambient for 30 min. Then the tungsten oxide nanowires were post-treated by the plasma enhanced chemical vapor deposition system, microwave plasma chemical vapor deposition system and excimer laser system, respectively. The effects on the tungsten oxide nanowires by different kinds of post-treatment techniques were studied.
The tungsten oxide nano-composite structures (W18O49/W18O49/Si and W18O49/NCD/Si) were synthesized by the VS growth mechanism. It was found that the field emission characteristics were both improved for the tungsten oxide nano-composite structures. Furthermore, the tungsten oxide nanoiwres array structure by nanoimprint lithography technique was fabricated. The fabrication of tungsten oxide nanoiwres array structure will be useful for future applications in related optoelectronic devices.

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