本篇論文提出了兩個注入式鎖定除頻器與注入式鎖定除頻器之熱載子效應之研究。第一顆晶片實現於台積電(TSMC)0.18 um製程，這顆除二注入鎖定除頻器設計方式是用交叉耦合(cross couple)與並聯可調共振腔之振盪器，加上由主被動元件混合組成的線性混波器。當驅動偏壓為0.9伏特且注入訊號強度為0 dBm時，除二注入鎖定除頻器之操作範圍可接受注入訊號從3.7 GHz到10.1 GHz ，鎖定範圍6.4 GHz除頻比例為92.75%。此除頻器之核心功耗為16.56毫瓦，所占面積為0.839 ×0.566毫米平方;同一顆電路亦有除四功能，設計方式是交叉耦合(cross couple)與並聯可調共振腔之振盪器，加上由主被動元件混合組成的線性混波器。當驅動偏壓為0.9伏特且注入訊號強度為0 dBm時，除四除頻大小2.7 GHz除頻比例為17.475%。此除頻器之核心功耗為16.56毫瓦，所占面積為0.839 ×0.566毫米平方。
第二顆晶片我們探討鎖定範圍除二注入鎖定除頻器上的熱載子效應，是採用台積電(TSMC)之矽鍺0.18 um製程完成。當電路遭到大於本製程可容許之偏壓加壓一段時間，可以量測到加壓一段時間內，鎖定範圍與除頻範圍之衰減。量測應力後鎖定範圍的結果與未加壓的電路比較有想當明顯的變化。在本段將討論熱載子效應對注入式鎖定除頻器之鎖定範圍與其他電路特性的影響。
最後，我們探討在一個注入式鎖定除頻器之除二電路熱載子效應。採用台積電(TSMC)之0.18 um製程完成。本電路直接經由MOS注入外部訊號耦合到串聯共振腔內。本段可以見到應力之後與應力之前電路的鎖定範圍之衰減與振盪頻率的變化，與比較兩種不同熱載子效應實驗的結果。

This thesis presents two Injection Locked Frequency Dividers (ILFDs). First one is a wide-locking range Injection Locked Frequency Divider by 2. Second one is a wide-locking range Injection Locked Frequency Divider by 4. Finally, we present two Injection locked frequency divider’s hot-carrier effects experiment. The above circuits are fabricated in the TSMC 0.18 μm CMOS process and 0.18um SiGe process.
Firstly, we present a novel wide locking range divide-by-2 injection-locked frequency divider (ILFD) and the divider is implemented in the TSMC 0.18 μm 1P6M CMOS process. The divide-by-2 ILFD is based on a cross-coupled voltage-controlled oscillator (VCO)consist of a parallel-tuned LC resonator as well as injection MOSFETs with source voltage coupled from VCO output and the injection MOSFET is a linear mixer. At the drain-source bias of 0.9 V, and at the incident power of 0 dBm the locking range of the divide-by-2 ILFD is 6.4 GHz, from the incident frequency 3.7 GHz to 10.1 GHz, the percentage is 92.75%. A novel wide locking range divide-by-4 injection-locked frequency divider (ILFD) is proposed in the thesis and was implemented in the TSMC 0.18 μm 1P6M CMOS process. The divide-by-4 ILFD is based on a cross-coupled voltage-controlled oscillator (VCO) with a parallel-tuned LC resonator and injection MOSFETs with source voltage coupled from VCO output and the injection MOSFET is a linear mixer. At the drain-source bias of 0.9 V, and at the incident power of 0 dBm the locking range of the divide-by-4 is 2.7 GHz, from the incident frequency 14.1 GHz to 16.8 GHz, the percentage is 17.47%. The core power consumption is 16.56 mW. The die area is 0.839 ×0.566 mm2.

Secondly, a divide-by-2 injection-locked frequency divider (ILFD) is designed for hot-carrier stress experimental study. The ILFD is made of a parallel-tuned cross-coupled voltage-controlled oscillator and a capacitive direct-injection MOSFET composite, consisted two MIM capacitors in series with an injection MOSFET. The injection MOSFET is first dc-stressed, and degradation in locking range in the post-stress ILFD was found. Then the whole ILFD is overvoltage-stressed, and degradation in locking range in the post-stress ILFD was also found. The latter stress reduces the current consumption and output power, while the former increases the current consumption and output power.
Finally, a divide-by-2 injection-locked frequency divider (ILFD) is designed in the 0.18μm CMOS technology for hot-carrier stress experimental study. The ILFD was tested at two bias conditions. At fixed supply voltage, the stress damage is larger when the gate of injection MOSFET is dc-biased below the supply voltage rather than equal to the supply voltage. The stress cause the degradation of locking range, current consumption and shifts the oscillation frequency.

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