研究生: |
林志嶽 Chih-Yueh Lin |
---|---|
論文名稱: |
CsPbX3鈣鈦礦量子點材料性質及發光元件研究 The study of properties of CsPbX3 perovskite quantum dots and its application in emission devices |
指導教授: |
陳良益
Liang-Yih Chen |
口試委員: |
吳季珍
Ji-Jhen Wu 陳貞夙 Jhen-Su Chen 陳景翔 Jing-Siang Chen |
學位類別: |
碩士 Master |
系所名稱: |
工程學院 - 化學工程系 Department of Chemical Engineering |
論文出版年: | 2017 |
畢業學年度: | 105 |
語文別: | 中文 |
論文頁數: | 113 |
中文關鍵詞: | 全無機鈣鈦鈣 、量子點 、發光原件 |
外文關鍵詞: | CsPbX3 perovskite, quantum dots, emission devices |
相關次數: | 點閱:428 下載:1 |
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本實驗主要以室溫合成法進行全無機溴化銫鉛鈣鈦礦量子點材料製備,並藉由結構分析與光學性質量測進行材料特性的研究。由分析結果可知:以室溫合成法所製備的溴化銫鉛鈣鈦礦量子點,其尺寸分佈均勻且螢光量子效率可達82%。此與文獻報導以熱注入合成法製備的產物並無明顯差異,但此製程與熱注入法相較之下更加快速便捷,且具有大量生產的可行性。此外,溴化銫鉛鈣鈦礦量子點可藉由不同的鹵素前驅物,快速進行陰離子交換,改變組成與激發光波長進而達到涵蓋可見光波段。在本研究中,以陰離子置換法所製備的碘化銫鉛與氯化銫鉛量子點的螢光量子效率分別為67.7%與7.6%。此外,在銫鉛鹵化物鈣鈦礦量子點穩定性研究方面,在此以矽氧化合物包覆銫鉛鹵化物鈣鈦礦量子點並進行粉體製作。由分析結果顯示,經包覆的銫鉛鹵化物鈣鈦礦量子點都達到一定程度阻擋了水氣破壞的影響並延長其螢光壽命。將矽氧化合物包覆溴化銫鉛與碘化銫鉛量子點粉體與UV膠均勻混合後製成光轉換層,置於365 nm的氮化銦鎵藍光二極體晶片上。經元件驅動後,可測量其色標位置為(0.354,0.334),和標準白光光源(0.33,0.33)十分接近,證實能作為白光二極體的光轉換材料。
In this study, a room temperature process was used to synthesized all-inorganic perovskite cesium lead bromide quantum dots (CsPbBr3 ¬QDs) and structural analyses and optical measurement were used to characterize as-synthesized CsPbBr3 ¬QDs. From analysis results, we can know that the room process is suitable to synthesize CsPbBr3 ¬QDs and its quantum yield approaching 82 %. The properties of CsPbBr3 ¬QDs prepared by the room temperature process are similar to that prepared by hot injection process. Comparing to hot injection, the room temperature process is more quickly and easily and with the feasibility of mass production. In addition, we can adjust the composition and emission wavelength of CsPbBr3 ¬QDs rapidly by using anion exchange process, such as Cl- and I- ions, to obtain CsPbCl3 and CsPbI3 ¬QDs. There quantum yield approach 7.6 % and 67.7%. For the study of stability of CsPbX3 (X=Cl, Br, I) ¬QDs, CsPbBr3 and CsPbI3¬ QDs were embedded on polyhedral oligomeric silsesquioxane (POSS), carry out powder production to avoid the influence of water and oxygen for long time. The CsPbBr3-POSS and CsPbI3-POSS QDs powder were mixed together on the UV gel to form the white light converter layer and the white light could be observed under the illumination of 365 nm indium gallium nitride light-emitting diode (InGaN LED). According to analyses of CIE 1931 uniform chromaticity-scale diagram and photoluminescence spectrum, our white LED device for backlight display passed through a color filter with a NTSC value of 107 % and the gamut is (0.354, 0.334).
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