本研究主要在發展具高穩定性之電洞傳導層，以混和摻雜聚苯乙烯磺酸(Poly (4-styrene sulfonate acid))於氧化鋅奈米粒子(ZnO NPs)水溶液中，並以旋轉塗佈法沉積於有機太陽能之主動層表面。依據不同摻雜聚苯乙烯磺酸比例之電洞傳導層應用於有機太陽能電池元件，其中以0.167:1之摻雜比例可得較佳之光電轉換效率為2.5%，藉由摻雜聚苯乙烯磺酸之電洞傳導層可得較平滑之表面粗糙度，使載子傳遞之再結合率下降，進而提升填充因子並得到較佳之光電轉換效率。藉由摻雜聚苯乙烯磺酸之氧化鋅奈米粒子，其較低之功函數(-5.25 eV)可匹配有機太陽能電池元件之能帶圖譜，同時氧化鋅奈米粒子具有較佳之導電性質有利於載子傳遞於電極。以摻雜聚苯乙烯磺酸之氧化鋅奈米粒子具有類p型半導體之傳導性質，藉由聚苯乙烯磺酸螯合鋅原子造成氧化鋅奈米粒子之鋅缺乏，其中螢光光譜儀可得於氧過量之訊號，並同時比較於X光光電子能譜儀可得鋅缺乏之訊號，藉以產生具類p型之氧化鋅奈米粒子。氧化鋅奈米子之電洞傳導層相較於氧化鉬之電洞傳導層於水中具有較佳之穩定性，其氧化鋅奈米粒子之元件效率相較於氧化鉬可於水中維持較長之生命週期。

In this study, we developed a doping method using PSS (Poly (4-styrene sulfonate acid)) doped ZnO nanoparticles (NPs) as Hole transport layer (HTL) in Organic photovoltaics (OPVs). In particular, we directly mixed the ZnO NPs with variant ratios of PSS and spin-coated on top of active layer (P3HT:PCBM) as HTLs, the best device based on PSS doped ZnO 3 (0.167:1) layer demonstrated a performance up to PCE of 2.05%. In addition, PSS doped ZnO 3 (0.167:1) layer has the lowest roughness (Rq) about 34.1 nm compare to the another variant of doping materials which reducing the charge recombination at interface. On the other hand, PSS doped ZnO 3 (0.167:1) layer also has a high work function of 5.25 eV, which is benefit for hole transporting properties. Moreover, PSS doped ZnO 3 (0.167:1) layer has a conductivity of 1.11E+04 corresponded from ITO as a substrate. Further information, the PL measurement showed that PSS doped ZnO 3 (0.167:1) layer has a decreased intensity at 500-600 nm, indicative of the present of oxygen. Then, in XPS, there is a/the deficiency zinc by the weaker intensity compare to that of ZnO NPs. Both of the PL and XPS results revealed that the PSS doped ZnO 3 (0.167:1) layer is p-type like material. According to our motivation, to improve the stability of HTL in OPVs, we compare PSS doped ZnO 3 (0.167:1) with MoO3 as HTL under water condition. It shown the PSS doped ZnO 3 (0.167:1) is able to survive until 3 days while the device using the MoO3 as HTL degrades immediately.

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