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研究生： 李佾修
Yi-Siou Li
論文名稱： 混合高分子犧牲層轉印氧化銦錫薄膜於透明有機電子元件之研究
Study of Polymer Blends Sacrificial Layer for Transferable ITO Thin Film on Transparent Organic Electronics
指導教授： 戴龑
Yian Tai
口試委員: 黃柏仁
Bohr-Ran Huang
王澤元
Tse-Yuan Wang
學位類別： 碩士
Master
系所名稱： 工程學院 - 化學工程系
Department of Chemical Engineering
論文出版年： 2018
畢業學年度： 106
語文別： 中文
論文頁數： 80
中文關鍵詞： 氧化銦錫 、轉印法 、聚苯乙烯磺酸鈉 、聚乙烯吡咯烷酮
外文關鍵詞： Indium tin oxide, Transfer method, Polystyrene sulfonate(PSS), Polyvinyl pyrrolidone(PVP)
相關次數： 點閱：283  下載：1 
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    • 本研究在於改良薄膜轉印法之犧牲層，利用射頻磁控濺鍍氧化銦錫(ITO)薄膜於犧牲層基板上，並藉由轉印法將ITO薄膜轉印至有機光電元件的高分子主動層上，可得到可見光透明薄膜電晶體，亦可避免濺鍍過程及退火過程對高分子層的傷害。將polystyrene sulfonate (PSS) 用作犧牲層在轉印時能使ITO與玻璃基板分離，然而在薄膜 (100nm) 尺度下，ITO容易在轉印過程中碎裂。本研究發現將少量polyvinyl pyrrolidone (PVP) 摻入PSS犧牲層中，在轉印的同時能保有ITO薄膜的完整度及電性。接著藉由調整不同比例的PSS:PVP犧牲層以及不同退火溫度，並利用撈膜轉印法，做轉印前與轉印後的成功率及電性的比較。本研究將簡單探討犧牲層的機制，並嘗試利用二次轉印法去除殘留層。最後利用兩種轉印法將ITO轉印至薄膜電晶體元件上作為電極，其特性與鋁電極薄膜電晶體相比有更高的開關比、更低的漏電流及極佳的透明度。

    Indium tin oxide (ITO) is the most widely used material for transparent electrode due to its high electrical conductivity and optical transparency. Generally, high quality ITO films are fabricated by magnetron sputtering method. However, sputtering and annealing are harmful when deposit ITO on organic or polymer thin film.
    A non-destructive, transfer approach method to fabricate ITO thin film on another substrate was reported. Polystyrene sulfonate (PSS) is used as the sacrificial layer for its high water-solubility. However, ITO is easily broken during the transfer process. Therefore, a small amount of polyvinyl pyrrolidone (PVP) is added into the PSS sacrificial layer and successfully maintained the integrity of the ITO film after transferred.
    In this research, I optimize the ITO quality by tuning different ratio of PSS:PVP sacrificial layer and different annealing temperature. Next, using different ratios of PSS:PVP and annealing temperature, transferring thin film by “free-standing transfer method”, and take comparison of film quality before and after transfer method. Furthermore, I discuss about the mechanism of sacrificial layer and report another transfer method called “secondary transfer method” and trying remove the residual layer. Finally, the ITO was transferred to the organic thin film transistor (OTFT) as an electrode by transfer method, which has higher on/off ratio, lower leakage current and excellent transparency, in comparison of the aluminum electrode thin film transistor.

    中文摘要 I ABSTRACT II 誌謝 III 目錄 V 圖目錄 IX 表目錄 XIII 第一章 緒論 1 1-1 前言 1 1-2 研究動機與目的 4 第二章 文獻回顧與理論 5 2-1 銦錫氧化物 (Indium Tin Oxide, ITO) 5 2-1-1 ITO薄膜基本性質 6 2-1-2 ITO薄膜導電性質 6 2-1-3 ITO薄膜光學性質 7 2-2 薄膜製作技術 9 2-3 濺鍍原理 11 2-4 薄膜成長機制 14 2-5 透明電子元件 16 2-6 犧牲層與轉印法 18 第三章 實驗 21 3-1 實驗藥品及耗材 21 3-2 實驗設備 22 3-3 實驗步驟 23 3-3-1 溶液配置 23 3-3-2 基板清洗 23 3-3-3 旋轉塗佈 23 3-3-4 濺鍍ITO薄膜 23 3-3-5 熱處理 24 3-3-6 薄膜轉印法 24 3-3-7 實驗流程圖 26 3-4 分析儀器簡介 27 3-4-1 分析儀器 27 3-4-2 霍爾量測儀(Hall effect measurement) 27 3-4-3 場發射掃描式電子顯微鏡(Field-Emission Scanning Electron Microscope, FESEM) 30 3-4-4 X光繞射儀(X-ray diffractometer, XRD) 31 3-4-5 紫外光/可見光分光光譜儀(UV-visible Spectrometer) 32 3-4-6 原子力顯微鏡(Atomic Force Microscopy, AFM) 33 3-4-7 差示掃描量熱分析儀(Differential Scanning Calorimetry, DSC) 35 第四章 結果與討論 36 4-1 ITO薄膜基本參數調控 36 4-1-1 功率及時間對ITO膜厚的影響 36 4-1-2 功率對ITO電性及結晶性的影響 38 4-1-3 工作壓力對ITO電性及結晶性的影響 39 4-1-4 熱處理對ITO光電性質及結晶性的影響 41 4-2 以撈膜法轉印犧牲層及犧牲層的性質探討 43 4-2-1 以PSS做為犧牲層 43 4-2-2 以PVP做為犧牲層 45 4-2-3 混合PSS:PVP做為犧牲層 46 4-3 熱處理與比例對轉印之ITO薄膜的影響 48 4-4 犧牲層與ITO薄膜的機制探討 56 4-4-1 利用AFM探討混合犧牲層的表面型態 56 4-4-2 利用DSC探討混合犧牲層的相態 57 4-4-3 利用SEM探討混合犧牲層與ITO薄膜的截面積 58 4-5 殘留犧牲層的去除與二次轉印法 62 4-5-1 改變旋轉塗佈犧牲層轉速對撈膜ITO薄膜的影響 62 4-5-2 二次轉印法 64 4-6 應用 68 4-6-1 以撈膜轉印ITO薄膜作為有機薄膜電晶體之電極 68 4-6-2 以二次轉印ITO薄膜作為有機薄膜電晶體之電極 70 4-6-3 以撈膜轉印ITO薄膜作為無機薄膜電晶體之電極 71 第五章 結論與未來展望 74 5-1 結論 74 5-2 未來展望 74 參考文獻 76

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