Atmospheric pressure plasma (APP) is recently been widely developed for some different applications. As a vacuum plasma, the APP can be used for some purposes such as etching and surface treatment. In this study, two different cases are studied: Case I. APP etching application for Integrated Circuits (ICs) decapsulation, and Case II. The roles of APP on mitigating tin (Sn) whiskers growth.
ICs decapsulation is a failure analysis (destructive method) after all of the process has been done, to ensure that the wire bond is in good condition after the encapsulation process. The analysis can be done by removing the mold compound using wet and/or dry etching methods. In this study, the dry etching method using atmospheric pressure plasma is proposed for the decapsulation process. Four different gas sources: compressed dry air (CDA), argon (Ar), a mixture of argon and 2% oxygen (O2), and a mixture of argon and 2% of hydrogen (H2) are used. The results show that the process with CDA successfully etch the mold compound, yet the wire bonds are damaged due to its high etching rate. While the decapsulation process with Ar gas only is not successfully can etch the mold compound, adding a little amount of oxygen and hydrogen can increase the etching process and successfully remove the mold compounds. However, adding a little amount of oxygen can damage the wire bonds. While adding a little amount of hydrogen shows good results and there is no damage to the wire bonds.
Tin (Sn) is widely used as the material for a surface finish in electronic components. However, the usage of Sn tends to grow a whisker. In this study, APP surface treatment is applied to Sn plating with two different gas sources: CDA and nitrogen (N2). Then, a mechanical indentation is applied for 24 hours with a 100 Kg load. The Sn plating of 0 weeks, 2 weeks after, and 4 weeks after the indentation is observed by SEM to see the whiskers' growth. The Sn whiskers that grow on the sample treated with nitrogen are less compared to the untreated sample. The plasma temperature measurement on the APP is around 100 0C and 150 0C by CDA and N2 gas sources.

Atmospheric pressure plasma (APP) is recently been widely developed for some different applications. As a vacuum plasma, the APP can be used for some purposes such as etching and surface treatment. In this study, two different cases are studied: Case I. APP etching application for Integrated Circuits (ICs) decapsulation, and Case II. The roles of APP on mitigating tin (Sn) whiskers growth.
ICs decapsulation is a failure analysis (destructive method) after all of the process has been done, to ensure that the wire bond is in good condition after the encapsulation process. The analysis can be done by removing the mold compound using wet and/or dry etching methods. In this study, the dry etching method using atmospheric pressure plasma is proposed for the decapsulation process. Four different gas sources: compressed dry air (CDA), argon (Ar), a mixture of argon and 2% oxygen (O2), and a mixture of argon and 2% of hydrogen (H2) are used. The results show that the process with CDA successfully etch the mold compound, yet the wire bonds are damaged due to its high etching rate. While the decapsulation process with Ar gas only is not successfully can etch the mold compound, adding a little amount of oxygen and hydrogen can increase the etching process and successfully remove the mold compounds. However, adding a little amount of oxygen can damage the wire bonds. While adding a little amount of hydrogen shows good results and there is no damage to the wire bonds.
Tin (Sn) is widely used as the material for a surface finish in electronic components. However, the usage of Sn tends to grow a whisker. In this study, APP surface treatment is applied to Sn plating with two different gas sources: CDA and nitrogen (N2). Then, a mechanical indentation is applied for 24 hours with a 100 Kg load. The Sn plating of 0 weeks, 2 weeks after, and 4 weeks after the indentation is observed by SEM to see the whiskers' growth. The Sn whiskers that grow on the sample treated with nitrogen are less compared to the untreated sample. The plasma temperature measurement on the APP is around 100 0C and 150 0C by CDA and N2 gas sources.

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