高分子太陽能電池具有溶液型製程、低製造成本、輕薄可撓曲特性、以及適合大面積與捲對捲方式大量製造等優勢，為新世代的太陽能電池。為了提升高分子太陽能電池的光電轉換效率與穩定性，很多研究團隊致力於改善高分子太陽能電池結構中電子與電荷傳輸界面層材料、合成新穎低能階高分子材料或摻雜其他材料於高分子材料中，來提升主動層對太陽光吸收及改善穩定性。
在本篇論文中，首先探討電洞傳導層對反式高分子太陽能電池之熱穩定性影響。另外，為降低製程成本，我們也利用溶液型三氧化鉬(s-MoO3)，取代傳統真空蒸鍍製備之三氧化鉬(t-MoO3)，作為反式高分子太陽能電池之電洞傳導層，並觀察溶液型三氧化鉬在大氣環境以及低水氧環境下之穩定性。
在第一部分，探討不同類型之電洞傳導層材料對熱穩定性的研究中，主動層為混合P3HT及PC61BM之溶液，以旋鍍及大面積超音波噴塗方式製作而成，而電洞傳導層則選用反式太陽電池中常見之MoO3或PEDOT: PSS。並將高分子太陽電池元件在大氣環境烤箱中作高溫之加速測試，溫度分別為80、90、100、110℃，藉由觀測短時間(10分鐘)與長時間(480分鐘)之效率變化曲線，了解主動層厚度與電洞傳導層類型對熱穩定度之影響。實驗結果顯示，使用不同類型電洞傳導層之高分子太陽能電池元件，其對於熱效應表現出不同之熱穩定趨勢。以PEDOT: PSS作為電洞傳導層之元件，其元件效率於加熱初期並未有明顯的下降，但隨著加熱時間的增加，即開始出現顯著的效率降幅；而以MoO3作為電洞傳導層之元件，則是於加熱初期便出現大幅度的效率降幅，而隨著加熱時間的增加，元件效率之降幅卻較為趨緩。本研究探討了高分子太陽能電池熱穩定性受電洞傳導層影響之機制。
在第二部分，以大面積超音波噴塗製程技術製備溶液型三氧化鉬(s-MoO3)，作為反式太陽電池之電洞傳導層層，以取代傳統真空蒸鍍型之三氧化鉬(t-MoO3)。本研究中主要控制溶液型三氧化鉬之膜層品質，包括電漿處理參數、s-MoO3之厚度以及噴塗膜層參數等等，希望能成功取代傳統真空蒸鍍型之t-MoO3，利於未來低成本及低耗能之商業量產化製程。藉由優化溶液型三氧化鉬膜層，以s-MoO3作為電洞傳導層之高分子太陽電池元件，其光電轉換效率可到達2.84 %，與使用t-MoO3作為電洞傳導層之高分子太陽電池元件效率相當。除此之外，以s-MoO3作為電洞傳導層之高分子太陽電池元件，在無封裝、低水氧值氮氣手套箱內存放經1296小時，尚保有96 %原有的光電轉換效率，也顯示以s-MoO3作為電洞傳導層之高分子太陽電池元件具備高穩定性。本研究亦成功以大面積噴塗溶液型s-MoO3取代傳統真空熱蒸鍍型t-MoO3，有利於未來高分子太陽能電池大面積量產製程。

With efficient solution processes, low cost fabrication, light-weight construction, flexible applications and mass-production efficiency, Polymer Solar Cells (PSCs) have the potential to lead a new generation of solar cells. To capitalize on this potential, many research groups have made efforts to increase PSC’s ability to harvest energy from the solar spectrum and to increase the stability. These efforts have been focused on improving the interface material through advances in the charge transport layers, synthesis of low-band gap polymers and doping other material into the polymers.
This paper has been investigated the effect of the Hole Transport Layer’s (HTL) material on the thermal stability of inverted PSCs and the application of s-MoO3 solution process to replace evaporation of t-MoO3 as the HTL for inverted PSCs and then to observe the stability of inverted PSCs in a nitrogen filled glove box in ambient conditions.
Part 1 investigates the effects of various Hole Transport Layer materials (HTL) on thermal stability. The PSCs consist of P3HT and PC61BM as the active layer (AL) and two conventional HTLs, PEDOT: PSS with t-MoO3. The inverted devices were heated at 80、90、100、and 110℃ as accelerated tests during short times, 0-10min, and long times, 0-480min, to study the effect of photoactive film thickness on thermal stability based on the two HTLs. This study exhibits diverse characteristics of thermal stability for the PSCs with MoO3 and PEDOT: PSS as HTLs. In devices with PEDOT: PSS as HTLs, the PCE did not show an obvious drop in heating during the initial period, furthermore the PCE degradation increases with increased heating times. In devices with MoO3 as HTLs, the reduction of PCE mainly occurs in the initial heating stage and then exhibits a slow-decay.
Part 2 describes the process that manufactured the s-MoO3 hole-transport layer for inverted bulk heterojunction PSCs which use a combination of solution based and spray coating process to replace the thermal evaporating deposition t-MoO3. The film quality of s-MoO3 was used as the main control in this study. Calculations were made using plasma treated s-MoO3, adjusting the film thickness of s-MoO3 and using spray coating processes. The goal is to determine whether s-MoO3 can successfully replace t-MoO3 for commercial production in the future. The PCE of 2.84 % can be achieved with s-MoO3 as HTLs in optimal films of s-MoO3, which is comparable to the reference t- MoO3 device. In addition, the stability test of PSCs was carried out in a nitrogen filled glove box condition without any encapsulation and still has 96 % of its initial value after 1296 hrs. The high stability of test PSCs proved that the conventional thermally evaporated t-MoO3 layer can be replaced by the solution process sprayed s-MoO3 film for the large area manufacturing in the future.

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