4H-SiC磊晶層少數載子生命週期測量之研究｜國立臺灣科技大學博碩士論文系統

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研究生：	鍾尚霖 Shang-Lin Chung
論文名稱：	4H-SiC磊晶層少數載子生命週期測量之研究 Investigation of minority carrier lifetime measurement in 4H-SiC epitaxial layer
指導教授：	洪儒生 Lu-Sheng Hong
口試委員:	洪儒生 Lu-Sheng Hong 黃智方 Chih-Fang Huang 楊博斐 Po-Fei Yang
學位類別：	碩士 Master
系所名稱：	工程學院 - 化學工程系 Department of Chemical Engineering
論文出版年：	2023
畢業學年度：	111
語文別：	中文
論文頁數：	73
中文關鍵詞：	碳化矽、4H-SiC同質磊晶、少數載子生命週期、磊晶層與基材間之界面復合
外文關鍵詞：	4H-SiC, 4H-SiC homoepitaxy, minority carrier lifetime, epilayer/substrate interface recombination
相關次數：	點閱：213 下載：4
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本研究使用裝載266nm脈衝雷射之時間解析光致發光光譜(time-resolved photoluminescence, TRPL)分析了在低注入條件下磊晶層厚度小於15μm的4H-SiC磊晶片中少數載子的復合行為。透過建立了一維連續方程式模型來模擬過量載子於4H-SiC磊晶層中，同時受磊晶層表面復合與磊晶層與基材間的界面復合影響時，過量載子的衰退曲線。模型模擬結果顯示，當磊晶層表面的復合速率(S1)大於1000cm/s，磊晶層與基材間的界面複合速率(S2)會主宰1/e衰退時間後的過量載子濃度變化。透過將磊晶層載子生命週期約為170ns的磊晶片樣品之TRPL量測數據與建制好的模型模擬比較，求得磊晶片樣品的S2大約為1000~3000cm/s，而S1範圍則從20000~40000cm/s。透過此方法所測得的S2應可作為評估4H-SiC晶片品質的指標之一。

The minority carrier recombination behavior of 4H-SiC epiwafer with epilayer thickness less than 15 μm has been investigated using time-resolved photoluminescence (TRPL) spectroscopy with a 266 nm laser source under low injection condition. A one-dimensional continuity equation was established to simulate the decay of excess carrier of epiwafer under the influence of surface recombination at both front and rear sides of the epilayer. Model simulations indicated that interface recombination velocity at epilayer/4H-SiC (S2) governs carrier decay after 1/e decay time when the surface recombination velocity at the front surface (S1) exceeds 1000 cm/s. By model fitting the measured carrier decay data of epiwafers with an epilayer bulk lifetime of 170 ns, S2 was determined to be about 1×10^3 to 3×10^3 cm/s while the fitted S1 ranged from 2×10^4 to 4×10^4 cm/s. S2 thus determined can be used as an index for judging the quality of 4H-SiC wafer.

摘要    IV
Abstract    V
致謝    VI
目錄    VII
圖目錄    X
表目錄    XIII
第一章    緒論    1
1    前言    1
2    研究動機    3
第二章    文獻回顧    5
1    碳化矽    5
1.1 碳化矽結構    5
1.2 碳化矽特性    7
2    4H-SiC同質磊晶製程與元件    11
2.1 4H-SiC同質磊晶製程(homoepitaxy)    11
2.2 4H-SiC磊晶缺陷與元件特性之關聯性    13
2.3 磊晶層缺陷量測手法    15
3    4H-SiC少數載子生命週期    17
3.1 少數載子生命週期    17
3.2 影響4H-SiC磊晶片少數載子生命週期的因子    19
3.3 Microwave Photoconductance Decay (µ-PCD)    23
3.4 時間解析光致發光光譜(Time-Resolved Photoluminescence , TRPL)    25
第三章    研究方法與設備    26
1    實驗材料    26
2    實驗設備    26
2.1 高溫爐    26
3    分析儀器    27
3.1 X光繞射儀(X-ray diffractometer, XRD)    27
3.2 磊晶片缺陷分析儀    28
3.3 時間解析光致發光光譜(Time-Resolved Photoluminescence, TRPL)    29
4    研究方法    31
4.1 過量載子衰退模型建立    32
4.2 磊晶片樣品的表面鈍化處理    33
第四章    結果與討論    34
1    碳化矽載子生命週期模擬    34
1.1 表面復合速率(S1)與界面復合速率(S2) 對過量載子衰退之影響模擬    34
1.2 4H-SiC磊晶厚度與磊晶層載子生命週期對過量載子衰退之影響模擬    38
2    4H-SiC磊晶片樣品缺陷分析    40
2.1 XRD結晶度與磊晶品質分析    40
2.2 4H-SiC磊晶片樣品的缺陷分佈分析    43
3    碳化矽磊晶片表面鈍化處理評估    46
4    碳化矽磊晶層載子週期分析    47
4.1 4H-SiC磊晶樣品之TRPL量測分析    47
4.2 4H-SiC磊晶樣品之S2擬合    52
第五章    結論    56
第六章    參考文獻    57


                                

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