摻銅氧化鎳p型透明氧化物導電薄膜｜國立臺灣科技大學博碩士論文系統

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研究生：	朱庭甫 Ting-Fu Chu
論文名稱：	摻銅氧化鎳p型透明氧化物導電薄膜 Copper doped p-type nickel oxide transparent conducting oxide thin films
指導教授：	趙良君 Liang -Chiun Chao
口試委員:	黃鶯聲 Ying-Sheng Huang 李奎毅 Kuei-Yi Lee 何清華 Ching-Hwa Ho 黃柏仁 Bohr-Ran Huang
學位類別：	碩士 Master
系所名稱：	電資學院 - 光電工程研究所 Graduate Institute of Electro-Optical Engineering
論文出版年：	2015
畢業學年度：	103
語文別：	中文
論文頁數：	92
中文關鍵詞：	氧化鎳、透明導電膜、摻銅
外文關鍵詞：	p-type transparent conducting oxide thin films
相關次數：	點閱：308 下載：0
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本研究利用反應式離子束濺鍍法成功地沉積了氧化鎳以及氧化鎳摻銅薄膜，並針對研究氧氣流量比、沉積基板溫度以及摻銅濃度比例對於氧化鎳薄膜的光電特性影響。氧氣流量比的提升會造成薄膜內鎳空缺的濃度增加，使得在室溫下沉積的氧化鎳薄膜電阻率隨提升的氧氣流量比下降。而在150℃及300℃的全氧環境下沉積的摻銅氧化鎳薄膜有(200)的單一晶相並形成了Ni1-xCuxO的結構(x由0至0.5)。其中發現Ni1-xCuxO薄膜的電阻率隨x的增大而下降，原因同為金屬空缺的濃度因摻銅而獲得了提升。在Ni1-xCuxO薄膜的穿透率方面，發現隨基板溫度的上升有較佳的穿透率表現，而摻銅則使得能隙大小降低。此外，UPS分析結果顯示在高濃度摻雜銅時(x=0.5)，會造成Ni1-xCuxO的功函數從5.2 eV下降至4.2 eV。

Nickel oxide with/without doping of Cu has been deposited by reactive ion beam sputter deposition. Effects of oxygen partial flow rates, deposition temperatures, and Cu concentrations on the electrical and optical properties of nickel oxide have been characterized. The resistivity of nickel oxide deposited at room temperature was found to decrease as oxygen partial flow rate increases, which is attributed to the increased concentration of nickel vacancies. Cu doped nickel oxide deposited at 150 and 300C by 100% oxygen ion beam results in the formation of single phase crystalline Ni1-xCuxO with x up to 0.5. The resistivity of Ni1-xCuxO was found to decrease as x increases, which is also due to increased metal vacancy defects. The transparency of Ni1-xCuxO was found to increase as deposition temperature increases, while doping of Cu results in decrease of band gap. UPS analysis indicates that high concentration of Cu (x = 0.5) results in the reduction of work function of Ni1-xCuxO from 5.2 to 4.2 eV.

中文摘要.......................................................................................................................Ι
Abstract....................................................................................................................... ΙΙ
致謝.............................................................................................................................III
目錄............................................................................................................................ IV
圖目錄........................................................................................................................VII
表目錄......................................................................................................................VIII
第一章	緒論..................................................................................................................1
1-1	前言.................................................................................................................1
1-2	研究動機.........................................................................................................2
第二章	文獻回顧與理論基礎......................................................................................4
    2-1 透明導電膜…….............................................................................................4
		2-1-1 金屬薄膜與金屬氧化物薄膜.............................................................4
		2-1-2 TCO之光學性質.................................................................................5
		2-1-3 TCO之導電性值.................................................................................6
	2-2 濺鍍原理.........................................................................................................7
	    2-2-1電漿原理…….......................................................................................7
		2-2-2 濺鍍(sputtering) .........................  ........................................................8
2-2-3 直流濺鍍(DC)   .....................................................................................8
2-2-4 射頻濺鍍(RF)   ......................................................................................9
2-2-5 磁控濺鍍   ..............................................................................................9
2-2-6 反應式濺鍍   ..........................................................................................9
2-2-7 離子束濺鍍.........................................................................................9
	2-3 薄膜沉積原理...............................................................................................10
		2-3-1 薄膜沉積現象...................................................................................11
		2-3-2 薄膜成長機制...................................................................................11
	2-4 氧化鎳基本性質  ..........................................................................................12
	2-5 氧化鎳文獻回顧   ..........................................................................................14
	2-6 摻雜氧化鎳文獻回顧   ..................................................................................15
第三章	實驗流程與儀器 ............................................................................................19
3-1 實驗流程   ......................................................................................................19
3-2 特性分析儀器   ..............................................................................................21
3-2-1 場發射掃描電子顯微鏡(Field emission scanning electron microscope, FESEM)  .................................................................................21
3-2-2能量散數光譜儀(Energy dispersive x-ray spectroscope, EDS)….....22
	3-2-3  X-ray繞射儀(X-ray diffraction, XRD)    ...........................................23
	3-2-4 X光光電子光譜法 (X-rayphotoelectronspectroscopy, XPS) ..........24
	3-2-5紫外光電子能譜(Ultraviolet Photoelectron Spectroscopy, UPS)......26
	3-2-6拉曼光譜(Raman spectroscopy) ........................................................27
	3-2-7 四點探針量測(Four-point probe measurement) ..............................27
	3-2-8 霍爾量測(Hall measurement)     ...........................................................29
    3-2-9 穿透率量測(Transmittance)  .............................................................34
	3-2-10橢圓偏光儀(Ellipsometer) ...............................................................36
第四章	實驗結果與討論............................................................................................39
    4-1 FE-SEM分析 ..................................................................................................39
	4-2 EDS分析........................................................................................................42
	4-3 XRD結果分析  ..............................................................................................45
	4-4 XPS結果分析   ...............................................................................................50
	4-5 拉曼光譜分析...............................................................................................56
	4-6 光學性質分析...............................................................................................58
		4-6-1穿透率分析........................................................................................58
		4-6-2 折射率與消光係數...........................................................................61
		4-6-3 能隙計算結果...................................................................................63
		4-6-4 UPS結果分析....................................................................................66
	4-7 電性結果分析...............................................................................................68
第五章	結論與位來展望............................................................................................72
參考文獻   .....................................................................................................................74

                                

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