碘蒸氣輔助聚焦離子束蝕刻技術於氧化鎵披覆氮化鎵奈米尖錐之製作

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研究生：	林柏誠 Bo-cheng Lin
論文名稱：	碘蒸氣輔助聚焦離子束蝕刻技術於氧化鎵披覆氮化鎵奈米尖錐之製作 Fabrication of oxide-capping GaN nanotips using iodine-assisted focused ion beam etching technique
指導教授：	黃柏仁 Bohr-ran Huang
口試委員:	趙良君 Liang-chun Chao 張守進 Shoou-jinn Chang
學位類別：	碩士 Master
系所名稱：	電資學院 - 電子工程系 Department of Electronic and Computer Engineering
論文出版年：	2010
畢業學年度：	98
語文別：	中文
論文頁數：	61
中文關鍵詞：	氮化鎵、銀、場發射
外文關鍵詞：	GaN, silver, field emission
相關次數：	點閱：354 下載：2
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本論文旨在探討碘蒸氣輔助聚焦離子束蝕刻製備氧化鎵披覆氮化鎵奈米尖錐及其特性分析。實驗首先以射頻式濺鍍系統沉積純銀薄膜，接著經由熱氧化方式形成雙層遮罩結構，最後使用碘蒸氣輔助聚焦離子束蝕刻製備氧化鎵披覆氮化鎵奈米尖錐。
第一層遮罩氧化銀奈米顆粒，用來保護並防止下方氧化鎵層被過度蝕刻，而氧化鎵為第二層遮罩，可有效地提升場發特性。利用控制不同的純銀薄膜厚度可以得到不同維度的奈米尖錐，而蝕刻過後，氧化銀奈米顆粒遮罩會被消耗殆盡，留下氧化鎵披覆在氮化鎵奈米尖錐頂部。
此論文的實現方面，成功地製作氮化鎵奈米尖錐結構與氧化鎵披覆氮化鎵奈米尖錐複合結構，其場發射起始電場分別為5.5 V/um，2.6 V/um，藉此發現由於電荷累積在氧化鎵奈米顆粒以及介面電子結構造成的電荷重新分佈改變了功函數，使得氧化鎵披覆氮化鎵奈米尖錐複合結構可有效地提升場發射特性。期望氧化鎵披覆氮化鎵奈米尖錐複合結構讓相關應用元件上能有效地提高效率，以提供給產業界新的材料與製程技術和方向，作為將來開發奈米結構光電元件之研究基礎。

In this study, GaN nanotip arrays were fabricated by an iodine-assisted focused ion beam etching (IAFIBE) using Ga ion mixed with iodine gas. The silver thin films were first deposited on n-GaN epilayer by the RF magnetron sputtering system, following by the thermal oxidation of Ag/GaN to form double masks, and then using iodine-assisted focused ion beam etching to fabricate GaN nanotips.
Silver oxide, which is the first mask, can be used to prevent gallium oxide from being etched seriously so that gallium oxide acting as the second mask can effectively improve the field emission properties. The tips possess different dimension, which were dependent on the thickness of silver thin film. After etching, silver oxide mask disappeared and only polycrystalline gallium oxide existed on top of GaN nanotips.
Notably, the corresponding turn-on field value for GaN nanotips without Ag cluster is 4.3V/um and the turn-on field is 2.2V/um for oxide-capping GaN nanotips. It has been found that the coated gallium oxide particles effectively improve the field emission due to the electron accumulation on the coated gallium oxide particles and the interfacial electron redistribution in the nanoscale hetero-structure which results in the shift of Fermi level and the change of work function. The fabrication of oxide-capping GaN nanotip arrays structure will be useful for future applications in related optoelectronic devices.

中文摘要........................................................................................................................ i
英文摘要....................................................................................................................... ii
誌謝.............................................................................................................................. iii
目錄.............................................................................................................................. iv
圖目錄.......................................................................................................................... vi
表目錄........................................................................................................................ viii

第一章 前言................................................................................................................. 1
第二章 基本理論與文獻回顧..................................................................................... 3
2.1 氮化鎵材料........................................................................................................ 3
2.2 氮化鎵奈米尖錐之相關研究............................................................................ 6
2.3 聚焦離子束系統.............................................................................................. 13
2.3.1 聚焦離子束技術概論........................................................................... 13
2.3.2 聚焦離子束系統簡介........................................................................... 14
2.3.3 聚焦離子束基本功能........................................................................... 16
2.4 場發射理論...................................................................................................... 21
第三章 實驗方法與步驟........................................................................................... 25
3.1 實驗流程.......................................................................................................... 25
3.2 氧化鎵披覆氮化鎵奈米尖錐之製備.............................................................. 27
3.2.1 試片清洗............................................................................................... 27
3.2.2 純銀薄膜沉積....................................................................................... 28
3.2.3 不同純銀薄膜厚度之熱氧化............................................................... 31
3.2.4 碘蒸氣輔助聚焦離子束蝕刻............................................................... 33
3.3 實驗分析儀器介紹.......................................................................................... 35
3.3.1 場發射掃描式電子顯微鏡 (FE-SEM) ............................................... 35
3.3.2 X射線繞射儀(X-ray diffraction, XRD)................................................ 35
3.3.3 穿透式電子顯微鏡 (TEM) ................................................................. 36
第四章 結果與討論................................................................................................... 37
4.1 實驗樣品.......................................................................................................... 37
4.2 熱氧化對不同純銀薄膜厚度之特性分析...................................................... 38
4.2.1 低銳角X射線繞射儀分析.................................................................. 38
4.2.2 SEM/EDX-mapping分析...................................................................... 39
4.3 不同遮罩對氧化鎵披覆氮化鎵奈米尖錐成長之影響.................................. 41
4.3.1 氧化鎵披覆氮化鎵奈米尖錐成長機制............................................... 41
4.3.2 氮化鎵奈米尖錐複合結構表面形貌分析........................................... 44
4.3.3 HR-TEM分析........................................................................................ 45
  4.4 不同蝕刻時間對氧化鎵披覆氮化鎵奈米尖錐成長之影響.......................... 48
4.5 氮化鎵奈米尖錐複合結構之場發射特性分析.............................................. 49
第五章 結論與未來展望........................................................................................... 53
參考文獻..................................................................................................................... 55

                                

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