在RF射頻收發機中，涵蓋了發射機(Tx)、接收機(Rx)、壓控震盪器(VCO)、相位偵測器(PFD)、充電幫浦(CP)、迴路濾波器(LF)、除頻器(FD)與倍頻器(FM)。在鎖相迴路(PLL)中電壓控制震盪器(VCO)扮演著關鍵的角色，隨著科技的進步，各項性能指標也需不斷的更新與改進，低功耗與低雜訊為設計中的主要課題。而在發射機(Tx)中，射頻功率放大器作為最後一端，其效率和線性度指標尤為重要，因此本論文將著重介紹以0.18µm CMOS製程實現低相位雜訊及低功耗電壓控制震盪器(VCO)、與應用於超寬頻功率放大器(PA)之電路設計。第一部分採用一種低電壓、低功耗壓控振盪器 (VCO)。電感電容 (LC) NMOS 交叉耦合 VCO 使用退化源級電感器來改善相位雜訊。開關 FET 在次臨界區域運行，以實現低功耗。VCO使用三匝兩路8字形電感器來抑制干擾噪聲，並使用中心抽頭耦合簡併源電感器來動態提高諧振迴路 Q 因子。兩個電感器配置為低耦合係數變壓器。 8字形電感由兩個3匝O型電感交錯串聯而成。採用台積電 0.18μm CMOS 製程製造的偏置電流源 VCO 的晶片面積為 0.8795 ×0.738 mm2。測得的 VCO 振盪頻率為 2.81 GHz，1 MHz 偏移時的相位雜訊為 - 114.7 dBc/Hz。功耗為 0.272 mW 時，品質因數 (FOM) 為 -189.32 dBc/Hz。第二部分設計了一種電感電容 (LC) NMOS 交叉耦合壓控振盪器 (VCO)，具有退化源電感器和用於改善相位雜訊的尾部。VCO使用 2 匝兩路 8 形電感器來抑制干擾噪聲，並使用中心抽頭耦合簡併源電感器來動態提高諧振迴路 Q 因子。兩個源電感器被配置為低耦合係數變壓器。 VCO 的 8 字形電感由 1 個 2 匝 o 形電感絞合而成。採用台積電 0.18μm CMOS 製程製造的電流偏壓 VCO 的晶片面積為 0.833 ×0.782 mm2。測得的 VCO 振盪頻率為 6.979 GHz GHz，1 MHz 偏移時的相位雜訊為 -119.329 dBc/Hz。功耗為 3.875 mW 時，品質因數 (FOM) 為 -189.86 dBc/Hz。
最後部分設計介紹了一個採用採用 0.18 μm CMOS 製程製造的超寬頻 (UWB) 功率放大器 (PA)。這三個放大器使用壓縮在同一區域的三個不同負載電感器，形成低晶片面積三線，以減少晶片面積。在 5.3 GHz 時，峰值功率增益 S21 為 21.04 dB。頻寬為 3.4 GHz 至 8.2 GHz。所製造的具有三股線的 PA 佔用的面積為 0.928×0.73 mm2，包括輸入/輸出 PAD。由於使用了兩種耦合電感，因此減少了產生的磁場雜訊。 PA 使用三個電感式峰值放大器，其中兩個電阻器與負載電感器串聯。

In the RF radio frequency transceiver, the blocks include the Transmitter (Tx), the Receiver (Rx), The Voltage Controlled Oscillator (VCO), the Phase Director (PFD), the Charge Pump (CP), and the Loop Filter (LF), Frequency Divider (FD) and Frequency Multiplier (FM). The voltage controlled oscillator (VCO) plays a key role in the phase locked loop (PLL). With the advancement of technology, various performance indicators also need to be constantly updated and improved. Low power consumption and low noise are the main considerations in the design. In the transmitter (Tx), the RF power amplifier is the last step, and its efficiency and linearity indicators are extremely important. Therefore, this paper will adopt a system to introduce a low-phase noise and low-power voltage-controlled oscillator using a 0.18μm CMOS process. (VCO), and circuit design for evaluating ultra-wideband power amplifier (PA).The first part presents the design of a low-voltage and low-power voltage-controlled oscillator (VCO). An inductance-capacitance (LC) NMOS cross-coupled VCO uses a degenerated source inductor for phase noise improvement. The switching FET operates in a subthreshold region for low-power operation. The VCO uses a 3-turn two-lobe 8-shaped inductor for interference noise suppression and a center-tapped coupled degenerated-source inductor to dynamically boost the tank Q factor. The two inductors are configured as a low-coupling coefficient transformer. The 8-shaped inductor consists of two 3-turn O-shaped inductors in a twisted series. The die area of the current-biased VCO fabricated in the TSMC 0.18μm CMOS process is 0.8795 ×0.738 mm2. The measured oscillation frequency of the VCO is 2.81 GHz, and the phase noise at 1 MHz offset is - 114.7 dBc/Hz. and the figure of merit (FOM) is -189.32 dBc/Hz at the power consumption of 0.272 mW.
The second part introduces the design of an inductance-capacitance (LC) NMOS cross-coupled voltage-controlled oscillator (VCO) with a degenerated source inductor and a tail for phase noise improvement. The VCO uses a 2-turn two-lobe 8-shaped inductor for interference noise suppression and a center-tapped coupled degenerated-source inductor to boost the tank Q factor dynamically. The two source inductors are configured as a low-coupling coefficient transformer. The VCO-core 8-shaped inductor consists of one 2-turn O-shaped inductor in a twisted series. The die area of the current-biased VCO fabricated in the TSMC 0.18μm CMOS process is 0.833 ×0.782 mm2. The measured oscillation frequency of the VCO is 6.979 GHz GHz, and the phase noise at 1 MHz offset is -119.329 dBc/Hz. and the figure of merit (FOM) is -189.86 dBc/Hz at a power consumption of 3.875 mW.
The third part introduces a new 8-shaped transformer used in Ultra-Wideband Transmitter. The transmitter utilizes a new 8-shaped transformer, which consists of a series combination of a 2:1 O-shaped transformer and a 1:2 O-shaped transformer. The transformer is formed by two 2-lobe 8-shaped inductors. Its performance and functionality are demonstrated in an on-off keying (OOK) ultra-wideband (UWB) transmitter. The UWB transmitter is specifically designed for applications in UWB communications and operates at a frequency of 3.38 GHz. The design of the UWB transmitter is fabricated using the TSMC 0.18μm CMOS process, and the resulting die area of the transmitter is measured to be 1.110×0.963mm2.

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