本研究建立以氬電漿餘輝態進行矽薄膜沉積之反應機制，並進行三維沉積反應模擬，工作氣體為矽烷及氫氣，同時計算低壓腔體內之矽薄膜成長速率。本研究共考慮19種重要物種，包含電子、質子、自由基氣體、中性氣體等。本研究之數學模型考慮52個空間化學反應式及10個表面反應式。模擬結果顯示：當工作壓力自2.0 Torr 下降至0.5 Torr時，矽薄膜平均成長率預估將自6.1A/s升高至8.45A/s；若工作功率自1000 W下降至500 W時，矽薄膜平均成長率預估將自9.5A/s下降至5.65A/s；當基板溫度升高，則有利於提高薄膜成長率；若增加腔體高度，則有利於獲得較均勻分佈的薄膜成長率；當相鄰氬電漿噴嘴橫向距離減少，則有利於提高薄膜成長率。

The steady growth rate of silicon thin-film inside a low-pressure chamber, with silane and hydrogen as the working gases, is predicted. A three-dimensional model of the deposition process in the afterglow of argon plasma with 19 species, such as electron, ions, free radicals and neutral species is developed. The mathematical model of the afterglow-type PECVD process of argon plasma is proposed, which includes 52 chemical reactions in space, and 10 reactions on substrate. As the system pressure falls from 2.0 Torr to 0.5 Torr, the average deposition rate increases from 6.1 A/s to 8.45 A/s. The average deposition rate decreases from 9.5 A/s to 5.65 A/s provided the system power decreases from 1000 W to 500 W. The increase of substrate temperature results in the growth of the average deposition rate, while the increase of chamber height leads to a more uniform distribution of deposition rate. The distance between two argon orifices decreases, while the predicted deposition rate increases.

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