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研究生： 林凱帆
Kaifan - Lin
論文名稱： 反應濺鍍法製備氮化鋁銦鎵薄膜及其特性分析
Processing and Property Characterization of AlInGaN Thin Films Prepared by Reactive Sputtering
指導教授： 郭東昊
Dong-Hau Kuo
口試委員: 何清華
Ching-Hwa Ho
薛人愷
Ren-Kae Shiue
學位類別： 碩士
Master
系所名稱： 工程學院 - 材料科學與工程系
Department of Materials Science and Engineering
論文出版年： 2016
畢業學年度： 104
語文別： 英文
論文頁數： 92
中文關鍵詞： 氮化鋁銦鎵 、薄膜 、濺鍍 、電學性質
外文關鍵詞： AlInGaN, Thin film, Sputtering, Electrical property
相關次數： 點閱：253  下載：3 
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    • 為探究使用反應式真空濺鍍機製備氮化鋁銦鎵薄膜的制程，與分析此制程下沉積之薄膜的性質。此論文設定兩組不同鋁銦比例的靶材，一組靶材包含摩爾百分比固定5%鋁，銦含量從7.5%、15%、25%的三個陶金靶，另外一組靶材固定25%銦，鋁含量從5%、7.5%、15%的按個陶金靶。靶材經過熱壓機將金屬鎵、銦、鋁以及氮化鎵粉末熱壓而成。反應式磁控濺鍍機輸出功率設定120 瓦特，加熱板溫度設定200 oC，所有的靶材在混合氬氣和氮氣的環境下進行濺鍍，薄膜沉積在矽（100）基板上。結果顯示，所有薄膜表現(10 10 )擇優取向的多晶閃鋅礦結構，而且薄膜的成分對其成膜品質、電學、光學具有影響。此外，使用固定鋁含量的靶材組制程p-n 二極體，I-V 量測顯示二極體開路電壓最高到9.2V，漏電流最低達6.65 × 10-9 A (在 -5 V)。

    By reactive sputtering in the mixing atmosphere of Ar and N2, two sets of AlInGaN films were deposited from Al0.05InxGa0.95-xN (x = 0.075, 0.15 and 0.25) targets and AlxIn0.25Ga0.75-xN (x = 0.05, 0.075 and 0.15) targets on Si (100) substrates at 200 oC and radio-frequency (RF) output power of 120 watt. The cermet targets mixed with metal powders and ceramic GaN for sputtering were made by hot pressing. The AlInGaN films show a wurtzite crystalline structure with a preferential m-(10 10 ) growth plane. The effects of compositional variation on the formation of AlInGaN films and its electrical and optical properties were investigated. A n-AlInGaN/p-Si heterostructure diode was designed and the I-V measurement of diodes illustrates that the device contained the Al0.05InxGa0.95-xN target deposited films own the high turn-on voltage of 9.2 V and the low leakage current of 6.65 × 10-9 A (at -5 V).

    Abstract .................................................................................................................. I Table of Contents ................................................................................................. III List of Tables ....................................................................................................... VI List of Figures .................................................................................................... VII Part I Introduction .................................................................................................. 1 1.1 Foreword ................................................................................................ 1 1.2 Purpose 5 Part II History of III-Nitride Review ..................................................................... 9 2.1 III-Nitride semiconductor .......................................................................... 9 2.2 Ternary III-Nitride alloy semiconductor .................................................. 15 2.3 Quaternary AlInGaN alloy semiconductor .............................................. 20 Part III Experimental Method and Procedure ...................................................... 34 3.1 Experimental materials and specification ................................................ 34 3.2 Experimental instruments ........................................................................ 35 3.2.1 Ultrasonic vibration cleaning machine ......................................... 35 3.2.2 Vacuum hot press machine ........................................................... 35 3.2.3 Magnetron radio-frequency sputtering system ............................. 36 3.3 Experimental procedure ........................................................................... 37 3.3.1 Powder configuration for the target .............................................. 37 3.3.2 Target Fabrication ......................................................................... 38 3.3.3 Slice and cleaning of substrates .................................................... 39 3.3.4 Sputter thin films........................................................................... 39 3.3.5 Device design ................................................................................ 40 3.3.6 Film characteristic measurement .................................................. 42 3.4 Introduction to Measurement Instruction and Parameters .................... 43 3.4.1 High Power X-Ray Diffractometer ............................................... 43 3.4.2 Field Emission Scanning Electron Microscope, FE-SEM ............ 45 3.4.3 Atomic Force Microscope, AFM .................................................. 46 3.4.4 Hall Effect Measurement System ................................................. 48 3.4.5 UV-Vis/NIR Spectrophotometer, UV-Vis/NIR ............................ 49 3.4.6 Semiconductor device parameter analyzer ................................... 50 Part IV Results and discuss .................................................................................. 52 4.1 Characteristics of the Al0.05InxGa(0.95-x)N films deposited by RF magnetron sputtering. .......................................................................................... 52 4.1.1 XRD .............................................................................................. 52 4.1.2 SEM .............................................................................................. 55 4.1.3 EDS ............................................................................................... 55 4.1.4 AFM .............................................................................................. 58 4.1.5 HALL ............................................................................................ 59 4.1.6 Optical property ............................................................................ 62 4.2 Characteristics of the Al0.05InxGa(0.95-x)N films deposited by RF magnetron sputtering. .......................................................................................... 65 4.2.1 XRD .............................................................................................. 65 4.2.2 SEM .............................................................................................. 68 4.2.3 EDS ............................................................................................... 68 4.2.4 AFM .............................................................................................. 70 4.2.5 HALL ............................................................................................ 72 4.2.6 Optical Property ............................................................................ 74 4.3 AlInGaN electron device analysis ........................................................... 77 4.3.1 p-n junction diode ......................................................................... 77 Part V Conclusions .............................................................................................. 80 Part VI References ............................................................................................... 82

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