目前隨著產業與科技的快速發展，固態照明的發光二極體(Light-emitting diode,LED)產業已成為趨勢，故在產業上用途也相當的廣泛，由於LED之基板材料多是以單晶氧化鋁(Al2O3)或藍寶石晶圓(Sapphire Wafer)為主，在藍及藍綠光LED功用為鍍膜的承載板。因單晶藍寶石晶圓是屬於硬脆材料，在拋光(Polishing)製程前需經過研光加工(Lapping)將材料達全面性平坦化，但在製程中往往會造成許多缺陷而造成後續製程需要很長時間來消除前段製程的缺陷。本研究為了針對研光製程能夠準確預測表面品質與製程參數對試片的影響，透過摩擦力感測器系統(Friction Sensor System, FSS)確認三種研光盤之起始區、研光區、研光-終點轉換區、終點區等四個區域，進而調整製程參數之依據來改善平坦化技術之情形。本研究藉由雙束型發射聚焦離子束顯微鏡(Dual-Beam Field-Emission Focused Ion Beam,FIB)來觀察研光後於次表面裂縫之情形，並建立次表面破壞裂縫及材料移除率估算，其中以銅盤和3μm磨料進行估算，估算結果顯示橫向裂縫(c)約為8.71μm，中間裂縫(h)約為3.1μm，材料移除率(Material Remove Rate,MRR)為817nm/min，並與實際重量損失方式來計算材料移除率(MRR)為752nm/min，故理論值與實際值大約相差65 nm/min(8.7%)。本研究也探討晶圓表面品質分析，由實驗結果發現於大磨料、高硬度研光盤及研光液於不適當黏度下之研拋光加工為造成晶圓品質及翹曲影響重要因素。研究成果未來可作為藍寶石及其他硬脆基板於研拋光技術發展之參考。

LED has become a trend and widely being applied in daily life because of the rapid development of related industry and technology. Sapphire or monocrystalline alumina oxide substrates have been selected as a carrier plate for coating or vapor deposition of epitaxial layer.Thus have been sapphire wafer prices play an important role in the blue light and blue-green LED fabrication process. This study is to establish a prediction process of surface quality and effects of process parameters on sapphire wafer lapping by friction sensor system (FSS), also find out the endpoint detection including start region, lapping region, transient region and endpoint region to control the planarization procedure with copper, resin copper, and tin plates. A process model has been developed to predict the cracks and material remove rate (MRR).The focus ion beam (FIB) is applied to verify the sub-surface cracks induced by lapping process. Experimental results of lapping with copper plate and 3μm abrasives, the lateral crack is estimated to 8.71μm and medial crack is about 3.1μm, Lapping results show that the lateral crack is 4.35μm and medial crack is 2.14μm. The estimated MRR is 817nm/min and experimental MRR is 752nm/min, the difference is about 65nm/min (8.7%). Moreover, this study also discusses the surface quality by HRXRD and shows that large size abrasive, higher hardness plate and inadequate viscosity of slurry cause poor wafer quality and warp. Further study can focus on lapping or polishing processes of SiC substrates.

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