簡易檢索 / 詳目顯示
| 研究生： |
楊曉韻 Siao-Yun Yang |
|---|---|
| 論文名稱： |
轉印氧化銦錫薄膜於有機電子材料之研究 Fabrication and Study of the Transferable ITO Layer on Organic Electronics |
| 指導教授： |
戴 龑
Yian Tai |
| 口試委員: |
朱 瑾
Jinn P. Chu 王澤元 none 陳銘崇 none |
| 學位類別： |
碩士 Master |
| 系所名稱： |
工程學院 - 化學工程系 Department of Chemical Engineering |
| 論文出版年： | 2016 |
| 畢業學年度： | 104 |
| 語文別： | 中文 |
| 論文頁數： | 115 |
| 中文關鍵詞： | 氧化銦錫 、轉印 、濺鍍 |
| 外文關鍵詞： | Indium tin oxide, transfer, sputter |
| 相關次數： | 點閱：274 下載：2 |
| 分享至: |
| 查詢本校圖書館目錄 查詢臺灣博碩士論文知識加值系統 勘誤回報 |
本研究利用射頻電漿濺鍍沉積氧化銦錫(ITO)薄膜於水溶性高分子polystyrene sulfonate (PSS)上，以翻膜轉印之技術將ITO薄膜轉移至有機高分子材料表面，作為有機光電元件之透明電極，如此可避免高能量濺鍍粒子轟擊高分子表面導致膜層受損。
藉由改變濺鍍功率、工作壓力、距離、溫度等參數，本研究得到具備片電阻低於10Ω/sq，並於可見光範圍內達到80%以上之穿透率，XRD分析中顯示薄膜結晶方向為(222)、(400)、(622)之最佳光電特性之ITO薄膜。本研究改良傳統翻膜技術，以二次轉印法將ITO轉印至TFT元件介電層PMMA上，其轉印前後之薄膜特性十分相近，表示二次轉印法可有效完整轉移薄膜。
最後利用二次轉印法將ITO轉印至TFT元件上作為電極並測試，觀察到於某些條件下，以轉印ITO作為電極之TFT其on-off ratio與鋁電極TFT差異不大，並且具備較高電容及遷移率。由此可知轉印ITO做為電極之應用是具備可行性的。
ITO thin films are mainly fabricated on substrate using high vacuum plasma process such as magnetron sputtering. Although suitable for most of inorganic thin film substrate surfaces, magnetron sputtering could not be applied directly for organic thin films, in particular, the active layer of organic semiconductors, owing to their sensitivity towards high energy atoms employed in plasma sputtering process.
In this study, first ITO thin films are sputtered on a sacrificial layer. In short working distance, high applied power and in situ 200°C annealing condition, we obtain an ITO film with low sheet resistance of 9.5Ω/sq and over 80% of the average transmittance in the visible region.
Thereafter we introduce a modified transfer method to successfully transfer ITO thin films onto organic layer surface. The optical and electrical properties, crystallinity and morphology of transferred thin films are characterized by Hall measurement, XRD, SEM and AFM. The transferred ITO shows properties closed to original ITO. By this transfer method, ITO thin films could be utilized as top electrode on organic thin film transistor devices without damaging the organic dielectric layer. After testing, we found that transferred ITO electrode does work on TFT device. The study shows an easy and versatile method for deposition of ITO as top electrode on organic substrates.
[1] 楊明輝(2001)。金屬氧化物透明導電材料的基本原理。工業材料，179，134。
[2] 曲喜新、楊邦朝、姜節儉、張懷武(1996)。電子薄膜材料，北京科學出版社出版。
[3] C.H. Lee & C.S. Huang. (1994). Materials Science and Engineering B22, 233-240.
[4] ZB Zhou, RQ Cui, QJ Pang, YD Wang, FY Meng, TT Sun, ZM Ding & XB Yu. (2001). Applied Surface Science, 172 (3), 245-252
[5] H. Kobayashi, T. Ishida, K. Nakamura, Y. Nakato & H. Tsubomura. (1992). Appl. Phys, 72, 5288.
[6] I.A. Rauf, J. (1996). Appl. Phys. 79(8), 15, 4057-4065.
[7] Y. Djaoued, VuHong Phong, S. Badilescu, P.V. Ashrit, Fernand E. Girouard & Vo-Van Truong, (1997). Thin Solid Films, 293, 108-112.
[8] Swon-soon Kim, Sw-Young Choi, Chan-Gyung Park & Hyeon-Woo Jin. (1999). Thin Solid Films, 347, 108-112.
[9] Jian Liu, E. Radlein & G.H. Frischat. (1999). Phys. Chem. Glasses, 40 (5), 277-281.
[10] C.H. Lee & C.S. Huang. (1994). Materials Science and Engineering, B22, 233-240.
[11] E. Benamar, M. Rami, C. Messaoudi, D. Sayah & A. Ennaoui. (1996). Solar Cells, 43, 37-45.
[12] W. Wu & B. Chiou. (1993). Appl. Surf. Science, 68, 497.
[13] C. Choi, K. No, W. Lee, H. Kim, S. Jung, W. Lee, W. Kim, S. Kim & C. Yoon. (1995). Thin Solid Films, 258, 274.
[14] T.J. Vink, W.Walrave, J.L.C. Daams, P.C. Baarslag & J.E.A.M. van den Meerakker. (1995). Thin Solid Films, 266, 145.
[15] T. Maruyama & K. Fukui. (1999). Appl. Phys,.70, 3848.
[16] H. Iida, T. Mishuku, A. Ito & K. Kato. (1988). Solar Energy Materials, 17, 407.
[17] L. J. Meng & M. P. dos Santos. (1994). Vaccum, 45, 1191.
[18] G. Sanon, R. Rup & A. Mansingh. (1990). Thin Solid Films, 190, 287
[19] Y. Liu, W. Zhu, O. K. Tan, X. Yao & Y. Shen. (1996). Materials Science: Materials in Electronics, 7, 279.
[20] Q. Wei, S. Miyanishi, K. Tajima & K. Hashimoto. (2009). Applied Materials & Interfaces, 1, 2660.
[21] A.Tada, Y. Geng, Q. Wei, K. Hashimoto & K. Tajima. (2011). Nature Materials, 10, 450.
[22] N. Nadaud, N. Lequeux, M. Nanot, J. Jove & T. Roisnel. (1998). Journal of Solid State Chemistry, 135, 140.
[23] A. J.Steckl & G. Mohammed. (1980). Applied Physics, 51, 3890.
[24] M. Quaas, H. SteVen , R. Hippler & H. WulV. (2000). Surface Science, 790, 454.
[25] C. C. Fan John & J. Bachner Frank. (1975). Electrochemical Society , 122, 1719.
[26] F. Wu & B. S. Chiou. (1994). Thin Solid Films, 247, 201.
[27] 高正雄(1999)，超LSI時代─電漿化學，復漢出版社。
[28] M. Ohring (1992). The materials science of thin films. Boston: Academic Press.
[29] A. Anders. (2010). Thin Solid Films, 518( 15), 4087- 4090
[30] 施敏、李明逵、曾俊元(民102年)。半導體元件物理與製作技術(第三版，初版)。新竹市國立交通大學出版社。
[31] John F. Moulder. (1995). Handbook of X-ray Photoelectron Spectroscopy: A Reference Book of Standard Spectra for Identification and Interpretation of XPS Data. Physical Electronics Division, Perkin-Elmer Corporation.
[32] M. Nisha, S. Anusha, Aldrin Antony, R. Manoj & M. K. Jayaraj. (2005). Appl. Surf. Sci. 252, 1430.
[33] 周安琪。薄膜材料。徐氏基金會。
[34] B. D. Cullity & S. R. Stock. (2001). Elements of X-Ray Diffraction, 3 edition. Upper Saddle River, NJ: Prentice Hall.
[35] 陳柏菁(2000)。應用於平面顯示器之ITO透明電極。光訊(85期)。
[36] T. Smoss. (1954). Proceedings of the Physical Society, B 67, 755.
[37] A.K. Kulkarni, K.H. Schulz, T-S. Lim & M. Khan. (1997). Thin Solid Films, 308–309, 1–7.
[38] El Akkad, M. Marafi, A. Punnoose & G. Prabu. (2000). Physica status solidi (a), 177, 445.
[39] S. K. Choi & J. I. Lee. (2001). Vacuum Science & Technology A, 19(5), 2043-2047.
[40] C.V.R. V. Kumar & A. Mansingh. (1989). Applied Physics, 65(3), 1270-1280.
