本研究是將銻化銦塊材利用陽極氧化鋁模板(AAO)輔助真空液壓鑄造法製作一維結構奈米線，獲得奈米線與共聚物混和，應用於製備成有機場效電晶體(OFET)記憶體電荷儲存層。主要探討二個方向：(1)銻化銦塊材利用不同陽極氧化鋁奈米孔徑(80、100及400 nm)製得奈米線，藉由掃描式電子顯微鏡觀察表面型態，並透過X光繞射儀及能量色散X射線光譜儀分析成分比例及相組成；(2)以80 nm奈米線為主，改變不同添加量(0 mg、2 mg、5 mg及9 mg)，並由半導體參數分析儀進行捕獲電荷能力檢測及比較。
結果顯示：銻化銦塊材經由SEM觀察表面，呈現二個相共存；進一步利用XRD分析結果顯示在塊材存在Sb (012)及(110)結晶平面，確定塊材為Sb/InSb兩相共存結構；以陽極氧化鋁模板輔助真空液壓鑄造銻化銦米線，以EDS分析結果顯示孔徑80 nm和100 nm之In：Sb原子百分比分別為41.51：59.91及47.71：52.29，Sb成分相較In成分多，進一步利用XRD分析結果顯示二者都存在Sb (012)結晶平面，確認有Sb/InSb兩相共存，分析結果與塊材相同，準確塊材成分複製於奈米線中；取不同重量之80 nm奈米線添加至記憶元件中，經半導體參數分析儀結果顯示，添加2毫克奈米線之元件具有最大的臨限電壓偏移量(ΔVth)為25 V以及最大的開關電流比為105；而添加9毫克之元件其ΔVth=6 V以及開關電流比為105，主要是因為合金奈米線濃度過高會導致電荷容易流失，使記憶效應不佳。

In the article, indium antimonide nanowires(NWs) were fabricated by vacuum molding injection process with anodized aluminum oxide (AAO) template, and the obtained NWs were mixed with PMAA to prepare an organic field-effect transistor (OFETs) memory. The two main part: (1) The influences of pore size of AAO (80 nm, 100 nm and 400 nm) on the morphology and composition ratio of InSb NWs. (2) The added amount of 80 nm InSb NWs (0 mg, 2 mg, 5 mg and 9 mg) affects the trapping charge ability of OFETs memory. InSb NWs surface morphology was observed by scanning electron microscope. InSb bulk and NWs composition was carried out by energy dispersive analysis and X-ray diffraction. The memory effect was tested by Parameter analyzer mainframe system to estimate their performance.
According to XRD and SEM results, InSb and pure Sb phases coexist in InSb bulk material, same as the prediction in phase diagram because Sb phase is indeed produced because it shows Sb (012) and (110) crystal plane. In InSb NWs EDS analysis, The chemical composition ratios of 80 and 100 nm NWs show 41.51: 59.91 and 47.71: 52.29, respectively. In addition, XRD result indicated the existence of (012), suggesting the successfully duplication of bulk material to nanoscale. The results of charge trapping characteristic show the component with 2 mg InSb NWs has the largest threshold voltage shift (ΔVth=25 V) and on/off ratio is 105. The component added 9 mg InSb NWs has minimum ΔVth = 6 V and the on/off ratio is 105.The main reason is that high concentration of the alloy NWs causes poor memory effect.

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