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| 研究生： |
陳柏霖 Bo-Lin Chen |
|---|---|
| 論文名稱： |
以新穎供體與發光體材料製作高外部量子效率的近紅外之有機發光二極體之研究 Novel Donor and Emitter Materials for High External Quantum Efficiency Near-Infrared Organic Light Emitting Diodes |
| 指導教授： |
李志堅
Chih-Chien Lee |
| 口試委員: |
劉舜維
Shun-Wei Liu 范慶麟 Ching-Lin Fan 張志豪 Chih-Hao Chang |
| 學位類別： |
碩士 Master |
| 系所名稱： |
電資學院 - 電子工程系 Department of Electronic and Computer Engineering |
| 論文出版年： | 2021 |
| 畢業學年度： | 109 |
| 語文別： | 中文 |
| 論文頁數： | 77 |
| 中文關鍵詞： | exciplex 、電子傳輸層 、近紅外光 、高效率 、OLED |
| 外文關鍵詞： | exciplex, electron transport layer, near infrared light, high efficiency, OLED |
| 相關次數： | 點閱：280 下載：1 |
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隨著OLED在可見光領域中發展得相當成熟，科學家也開始將目光放到近紅外光的領域，雖然近紅外光的元件受限於能隙定律等因素產生低效率的問題，但科學家利用重金屬複合物、TADF、exciplex等方法來提高元件的效率。
本論文是以exciplex原理玩基礎，開發出兩支主體材料1-SF與2-SF並搭配CN-T2T混合形成exciplex的主體材料，再以其放光光譜來開發出一支專屬的客體放光材料TT-SF，接下來我們進行一連串光學分析用以證實發光層的exciplex系統能完全將能量轉移至客體材料，我們開始確認客體材料摻雜的最佳濃度以確保在主體不殘留的情況下使元件有最高的效率。
接下來我們將電洞注入層、電洞傳輸層與電子傳輸層一一確認其最佳的厚度最後我們得到以1-SF:CN-T2T:TT-SF和2-SF:CN-T2T:TT-SF為發光層最佳結構的元件主峰分別在772 nm和767 nm而外部量子效率達5.17 %與4.29 %，為高效率的近紅外光OLED元件，其中較為特別的地方是最佳結構中的電子傳輸層厚度需要100 nm，這使我們再進一步的研究中發現電子傳輸層的厚度變化會對於元件產生光學效應。
As OLED has matured in the visible light field, scientists have begun to focus on the near-infrared light field. Although the near-infrared light component is limited by the energy gap law and other factors, the problem of low efficiency, but scientists use heavy metal composites, TADF, exciplex and other methods to improve the efficiency of the component.
This paper is based on the principle of exciplex, developed two host materials 1-SF and 2-SF and mixed with CN-T2T to form the host material of exciplex, and then developed an exclusive guest luminescence based on its emission spectrum Material TT-SF, and then we conduct a series of optical analysis to confirm that the exciplex system of the light-emitting layer can completely transfer energy to the guest material. We start to confirm the optimal concentration of the guest material doping to ensure that the host does not remain the components have the highest efficiency.
Next, we will confirm the optimal thickness of the hole injection layer, hole transport layer and electron transport layer one by one. Finally, we get the values of 1-SF:CN-T2T:TT-SF and 2-SF:CN-T2T:TT -SF is the element with the best structure of the light-emitting layer. The main peaks are at 772 nm and 767 nm, and the external quantum efficiency is 5.17% and 4.29%. It is a high-efficiency near-infrared OLED element, and the more special part is the best structure. The thickness of the electron transport layer needs to be 100 nm, which led us to further research and found that the change in the thickness of the electron transport layer will have an optical effect on the device.
[1] Y.-C. Wei, S. F. Wang, Y. Hu, L.-S. Liao, D.-G. Chen, K.-H. Chang, C.-W. Wang, S.-H. Liu, W.-H. Chan, J.-L. Liao, W.-Y. Hung, T.-H. Wang, P.-T. Chen, H-F. Hsu, Y. Chi and P.-T. Chou, Nat. Photonics, 14, 570 (2020).
[2] M. Pope, H. P. Kallman and P. Magnante, J. Chem. Phys., 38, 2042 (1963).
[3] W. Helfrich, W. G. Schneider, Phys. Rev. Lett., 14, 229 (1965).
[4] C. W. Tang and S. A. VanSlyke, Appl. Phys. Lett., 51, 913 (1987).
[5] C. W. Tang, S. A. VanSlyke and C. H. Chen, J. Appl. Phys., 65, 3610 (1989).
[6] R. Englman, J. Jortner, Mol. Phys., 18, 145 (1970).
[7] M. Bixon, J. Jortner, J. Codes, M. E. Michel-Beyerle, J. Phys. Chem., 98, 1289 (1994).
[8] A. I. Burshtein, E. Krissinel, J. Phys. Chem., 100, 3005 (1996).
[9] A. Zambetti, A. Minotto, F. Cacialli, Adv. Funct. Mater., 29, 1807623 (2019).
[10] L. Yao, S. T. Zhang, R. Wang, W. J. Li, F. Z. Shen, B. Yang, Y. G. Ma, Angew. Chem. Int. Ed., 53, 2119 (2014).
[11] D. F. O’Brien, M. A. Baldo, M. E. Thompson and S. R. Forrest, Appl. Phys. Lett., 74, 442 (1999).
[12] M. A. Baldo, S. Lamansky, P. E. Burrows, M. E. Thompson and S. R. Forrest, Appl. Phys. Lett., 75, 4 (1999).
[13] K. T. Ly, R.-W. Chen-Cheng, H.-W. Lin, Y.-J. Shiau, S.-H. Liu, P.-T. Chou, C.-S. Tsao, Y.-C. Huang and Y. Chi, Nat. Photonics, 11, 63 (2016).
[14] Y. Li, J. Yao, C. Wang, X. Zhou, Y. Xu, M. Hanif, X. Qiu, D. Hu, D. Ma, Y. Ma, Dyes Pigm., 173, 107960 (2020).
[15] H. Uoyama, K. Goushi, K. Shizu, H. Nomura and C. Adachi, Nature, 492, 234 (2012).
[16] W. Song, J. Y. Lee, Org. Electron., 48, 285 (2017).
[17] T. Forster, Discuss. Faraday Soc., 27, 7 (1959).
[18] D. L. Dexter, J. Chem. Phys., 21, 836 (1953).
[19] M. Zhu and C. Yang, Chem. Soc. Rev., 42, 4963 (2013).
[20] P. D. Laible, R. S. Knox and T. G. Owens, J. Phys. Chem. B, 102, 1641 (1998).
[21] Z. Wang, C. Wang, H. Zhang, Z. Liu, B. Zhao, W. Li, Org. Electron., 66, 227 (2019).
[22] K.-H. Kim, C.-K. Moon, J. W. Sun, B. Sim, and J.-J. Kim, Adv. Opt. Mater., 7, 895 (2015).
[23] T. Lin, T. Zhang, Q. Song, F. Jin, Z. Liu, Z. Su, Y. Luo, B. Chu, C. S. Lee, W. Li, Org. Electron., 38, 69 (2016).
[24] K. Goushi, K. Yoshida, K. Sato and C. Adachi, Nat. Photonics, 6, 253 (2012).
[25] Y.-C. Lo, T.-H. Yeh, C.-K. Wang, B.-J. Peng, J.-L. Hsieh, C.-C. Lee, S.-W. Liu and K.-T. Wong, ACS Appl. Mater. Interfaces, 11, 23417 (2019).
[26] C.-Y. Huang, S.-Y. Ho, C.-H. Lai, C.-L. Ko, Y.-C. Wei, J.-A. Lin, D.-G. Chen, T.-Y. Ko, K.-T. Wong, Z. Zhang, W.-Y. Hung and P.-T. Chou, J. Mater. Chem. C, 8, 5704 (2020).
[27] D. Graves , V. Jankus, F. B. Dias and A. Monkman, Adv. Funct. Mater., 16, 2343 (2014)
[28] W.-Y. Hung, P.-Y. Chiang, S.-W. Lin, W.-C. Tang, Y.-T. Chen, S.-H. Liu, P-T. Chou, Y.-T. Hung and K.-T. Wong, ACS Appl. Mater. Interfaces, 8, 4811 (2016)..
[29] D. H. Huha, G. W. Kimb, G. H. Kimb, C. Kulshreshtha, J. H. Kwonb, Synth. Met., 180, 79 (2013).
[30] B. Zhao, T. Zhang, B. Chu, W. Li, Z. Su, H. Wu, X. Yan, F. Jin, Y. Gao and C. Liu, Sci. Rep., 5,10697 (2015).
[31] J. Zhao, J. Ye, X. Du, C. Zheng, Z. He, H. Yang, M. Zhang, H. Lin and S. Tao, Chem Asian J, 23,4093(2020).
