我們在氮化銦鎵/氮化鎵(InGaN/GaN)多重量子井(MQW)發光二極體的能障層當中，加入氮化銦鎵/氮化鎵(InGaN/GaN)多重量子能障(MQBs)異質結構，並藉由變溫與變電流電激發光光譜的量測，來研究此發光二極體的特性。在多重量子井的能障層中加入多重量子能障結構，可提高有效的能障高度，減少載子溢出的現象，使載子侷限在作用層內的數量增加。此外，我們也建立數學模型來研究溫度和注入電流對氮化銦鎵/氮化鎵(InGaN/GaN)多重量子井發光二極體的熱效應，包括熱躍遷、捕獲、輻射和非輻射複合等載子遷移機制，在此模型中都有考慮到。電激發光光譜隨溫度變化的趨勢可以用此模型計算出來，模擬結果與實驗數據的趨勢吻合。由實驗與理論分析的結果可以知道，具有多重量子能障的樣品，不僅發光強度較強，外部量子效率對溫度變化的敏感性較低，且接面溫度較低，隨注入電流增加其接面溫度上升的幅度也較小，證實的確改善了發光二極體之光電特性。

We introduce the InGaN/GaN multi-quantum barriers (MQBs) into InGaN/GaN multi-quantum well (MQW) heterostructures to improve the performance of light-emitting diodes. The temperature and injection current dependent electroluminescence were carried out to study the characteristics of InGaN/GaN MQWs. We observe the enhancement of carrier confinement in the active layer and the inhibited carrier leakage overthe barrier for the sample with MQBs. In addition, a steady-state thermal model is presented to investigate the thermal effect of InGaN/GaN multi-quantum well light-emitting devices. The important mechanisms for the carrier dynamics, including thermal emission, capturing, radiative and nonradiative recombination, are taken into account in this model. The temperature-dependent emission energies of the EL spectra are calculated with this model. The simulation results are in fair agreement with the experimental data. Based on the theoretical and experimental results, it is found that the radiative efficiency of the sample possessing MQBs exhibits less sensitive temperature dependence and leads to an improved efficiency in the high temperature and high injection current range.

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