SiC MOSFET於導通及截止間切換時引起振盪的原因之一，在於閘極所存在的寄生元件，為了減去閘極路徑的寄生元件所造成的影響，提出一個可編程並具有回授功能的閘極驅動器。藉由驅動器的回授端點與SiC MOSFET閘極連接而使用遠端感測，大幅減少驅動器與閘極間的路徑含有之寄生元件所造成的振盪。此閘極驅動器可達到只需單一電源即可提供正電壓及負電壓訊號、快速切換閘極導通與截止、可進行回授、可進行補償等優點。此閘極驅動器在結構內部設計中心參考電位，而將正電壓及負電壓進行區分。對所提出之閘極驅動器進行實驗測試，以此驅動器驅動之SiC MOSFET切換至導通的上升時間可達26%的改善，切換至截止的下降時間可達64%的改善，並且大幅減少SiC MOSFET導通及截止切換時因閘極路徑中寄生元件所造成的電壓振盪。

The parasitic elements at gate is one of the reasons why the oscillation is caused when SiC MOSFET is turning on and off. To reduce the influence which the parasitic elements caused, a programmable active gate driver with feedback is proposed. By connecting the feedback terminal of the gate driver and MOSFET gate to apply remote sensing function, the oscillation which caused by the parasitic elements could be suppressed significantly. Providing positive and negative voltage with only a single power source, switching the gate to turn on and off with fast speed, being able to have feedback, being able to have compensator are the advantages of this gate driver. A intermediate return is designed in the gate driver to build the positive and negative voltage. The experimental results of the proposed active gate driver show that the rise time of the SiC MOSFET driven by this driver is able to reach 26% improvement when switching on, the fall time when switching off is able to reach 64% improvement. And greatly reduced the oscillation which caused by the parasitic elements in the gate path when switching the SiC MOSFET on and off.

[1] Z. Ma, Y. Pei, L. Wang, Z. Qi, Q. Yang and G. Zeng, "Study on the Effect of External Drain-Source Capacitance on the Turn-On Switching Characteristics of SiC MOSFET Using an Analytical Model," 2022 IEEE 13th International Symposium on Power Electronics for Distributed Generation Systems (PEDG), Kiel, Germany, 2022, pp. 1-6.

[2] W. Zhang, L. Zhang, P. Mao and X. Chan, "Analysis of SiC MOSFET Switching Performance and Driving Circuit," 2018 IEEE International Power Electronics and Application Conference and Exposition (PEAC), Shenzhen, China, 2018, pp. 1-4.

[3] J. Biela, M. Schweizer, S. Waffler and J. W. Kolar, "SiC versus Si—Evaluation of Potentials for Performance Improvement of Inverter and DC–DC Converter Systems by SiC Power Semiconductors," in IEEE Transactions on Industrial Electronics, vol. 58, no. 7, pp. 2872-2882, July 2011.

[4] W. Song, W. Zhang, B. Ren and Y. Zhong, "Bidirectional Switching Characteristics Analysis Based on SiC MOSFET," 2018 Chinese Automation Congress (CAC), Xi'an, China, 2018, pp. 2949-2954.

[5] O. Stalter, B. Burger and S. Lehrmann, "Silicon Carbide (SiC) D-MOS for grid-feeding solar-inverters," 2007 European Conference on Power Electronics and Applications, Aalborg, Denmark, 2007, pp. 1-10.

[6] X. Ding, Y. Zhao and Y. Yang, "Characterization of Low-Temperature for SiC MOSFET Based On the Capacitance-Voltage Characteristic," 2022 IEEE Transportation Electrification Conference and Expo, Asia-Pacific (ITEC Asia-Pacific), Haining, China, 2022, pp. 1-5.

[7] R. Mitova, R. Ghosh, U. Mhaskar, D. Klikic, M. -X. Wang and A. Dentella, "Investigations of 600-V GaN HEMT and GaN Diode for Power Converter Applications," in IEEE Transactions on Power Electronics, vol. 29, no. 5, pp. 2441-2452, May 2014.

[8] H. Zhang, L. M. Tolbert and B. Ozpineci, "Impact of SiC Devices on Hybrid Electric and Plug-in Hybrid Electric Vehicles," 2008 IEEE Industry Applications Society Annual Meeting, Edmonton, AB, Canada, 2008, pp. 1-5.

[9] Z. Chen, C. Chen and A. Q. Huang, "Driver Integrated Online Rds-on Monitoring Method for SiC Power Converters," 2022 IEEE Energy Conversion Congress and Exposition (ECCE), Detroit, MI, USA, 2022, pp. 01-07.

[10] B. Yang, Q. Ge, L. Zhao, Z. Zhou and D. Cui, "Influence of parasitic elements of busbar on the turn-off voltage oscillation of SiC MOSFET half-bridge module," IECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society, Beijing, China, 2017, pp. 4939-4943.

[11] Z. Chen, D. Boroyevich and R. Burgos, "Experimental parametric study of the parasitic inductance influence on MOSFET switching characteristics," The 2010 International Power Electronics Conference - ECCE ASIA -, Sapporo, Japan, 2010, pp. 164-169.

[12] T. Liu, R. Ning, T. T. Y. Wong and Z. J. Shen, "Modeling and Analysis of SiC MOSFET Switching Oscillations," in IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 4, no. 3, pp. 747-756, Sept. 2016.

[13] B. Luo, G. Luo and S. Li, "Quantitative Modeling and Analysis of Switching Oscillations of Cascode GaN Devices in Half-Bridge Converters," in IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 10, no. 5, pp. 5446-5463, Oct. 2022.

[14] J. Wang, H. S. -h. Chung and R. T. -h. Li, "Characterization and Experimental Assessment of the Effects of Parasitic Elements on the MOSFET Switching Performance," in IEEE Transactions on Power Electronics, vol. 28, no. 1, pp. 573-590, Jan. 2013.

[15] C. Deng, Z. Wen, C. Hu and D. Xu, "Integration of both EMI filter and Boost inductor for 1 kW PFC converter," 2012 IEEE Energy Conversion Congress and Exposition (ECCE), Raleigh, NC, USA, 2012, pp. 4600-4607.

[16] E. Velander et al., "An Ultralow Loss Inductorless dv/dt Filter Concept for Medium-Power Voltage Source Motor Drive Converters With SiC Devices," in IEEE Transactions on Power Electronics, vol. 33, no. 7, pp. 6072-6081, July 2018.

[17] A. Bhargava, D. Pommerenke, K. W. Kam, F. Centola and C. W. Lam, "DC-DC Buck Converter EMI Reduction Using PCB Layout Modification," in IEEE Transactions on Electromagnetic Compatibility, vol. 53, no. 3, pp. 806-813, Aug. 2011.

[18] R. Pittini, Z. Zhang and M. A. E. Andersen, "Switching performance evaluation of commercial SiC power devices (SiC JFET and SiC MOSFET) in relation to the gate driver complexity," 2013 IEEE ECCE Asia Downunder, Melbourne, VIC, Australia, 2013, pp. 233-239.

[19] A. P. Camacho, V. Sala, H. Ghorbani and J. L. R. Martinez, "A Novel Active Gate Driver for Improving SiC MOSFET Switching Trajectory," in IEEE Transactions on Industrial Electronics, vol. 64, no. 11, pp. 9032-9042, Nov. 2017.

[20] D. Fleury, A. Cros, G. Bidal, J. Rosa and G. Ghibaudo, "A New Technique to Extract the Source/Drain Series Resistance of MOSFETs," in IEEE Electron Device Letters, vol. 30, no. 9, pp. 975-977, Sept. 2009.

[21] R. Xie, H. Wang, G. Tang, X. Yang and K. J. Chen, "An Analytical Model for False Turn-On Evaluation of High-Voltage Enhancement-Mode GaN Transistor in Bridge-Leg Configuration," in IEEE Transactions on Power Electronics, vol. 32, no. 8, pp. 6416-6433, Aug. 2017.

[22] S. Jahdi, O. Alatise, J. O. Gonzalez, L. Ran and P. Mawby, "Comparative analysis of false turn-ON in silicon bipolar and SiC unipolar power devices," 2015 IEEE Energy Conversion Congress and Exposition (ECCE), Montreal, QC, Canada, 2015, pp. 2239-2246.

[23] R. Khanna, W. Stanchina and G. Reed, "Effects of parasitic capacitances on gallium nitride heterostructure power transistors," 2012 IEEE Energy Conversion Congress and Exposition (ECCE), Raleigh, NC, USA, 2012, pp. 1489-1495.

[24] R. Khanna, A. Amrhein, W. Stanchina, G. Reed and Z. -H. Mao, "An analytical model for evaluating the influence of device parasitics on Cdv/dt induced false turn-on in SiC MOSFETs," 2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC), Long Beach, CA, USA, 2013, pp. 518-525.

[25] J. Dyer, Z. Zhang, F. Wang, D. Costinett, L. M. Tolbert and B. J. Blalock, "Dead-time optimization for SiC based voltage source converters using online condition monitoring," 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), Albuquerque, NM, USA, 2017, pp. 15-19.

[26] M. Saeidi, A. A. Nazeri, M. Al Dayea and P. Zacharias, "Behavior Consideration of 1200 V SiC Half-Bridge Power Module under Various Dead-Time during Hard-Switching," IECON 2022 – 48th Annual Conference of the IEEE Industrial Electronics Society, Brussels, Belgium, 2022, pp. 1-5.

[27] L. Tang et al., "The Influence of Dynamic Threshold Voltage Drift on Third Quadrant Characteristics of SiC MOSFET," 2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), Wuhan, China, 2021, pp. 483-487.

[28] A. Paredes, H. Ghorbani, V. Sala, E. Fernandez and L. Romeral, "A new active gate driver for improving the switching performance of SiC MOSFET," 2017 IEEE Applied Power Electronics Conference and Exposition (APEC), Tampa, FL, USA, 2017, pp. 3557-3563.

[29] Z. Li, J. Chai, H. Lu and Y. Li, "An Active Gate Driver for Suppressing the Current Oscillation of SiC MOSFET," 2021 IEEE 4th International Electrical and Energy Conference (CIEEC), Wuhan, China, 2021, pp. 1-5.

[30] E. Raviola and F. Fiori, "A Low Complexity Active Gate Driver to Damp the Oscillations Caused by Switching Power Transistors," 2022 International Symposium on Power Electronics, Electrical Drives, Automation and Motion (SPEEDAM), Sorrento, Italy, 2022, pp. 497-502.

[31] S. K. Mazumder and T. Sarkar, "Optically Activated Gate Control for Power Electronics," in IEEE Transactions on Power Electronics, vol. 26, no. 10, pp. 2863-2886, Oct. 2011.

[32] G. Engelmann, T. Senoner and R. W. De Doncker, "Experimental investigation on the transient switching behavior of SiC MOSFETs using a stage-wise gate driver," in CPSS Transactions on Power Electronics and Applications, vol. 3, no. 1, pp. 77-87, March 2018.

[33] T. J. Nistane, S. Singh and J. Kalaiselvi, "A Simple Active Gate Driver Circuit to Reduce Switching Oscillations and Overshoot," 2021 IEEE 2nd International Conference on Applied Electromagnetics, Signal Processing, & Communication (AESPC), Bhubaneswar, India, 2021, pp. 1-6.

[34] Z. Zeng and X. Li, "Comparative Study on Multiple Degrees of Freedom of Gate Drivers for Transient Behavior Regulation of SiC MOSFET," in IEEE Transactions on Power Electronics, vol. 33, no. 10, pp. 8754-8763, Oct. 2018.

[35] S. Zhao, X. Zhao, Y. Wei, Y. Zhao and H. A. Mantooth, "A Review of Switching Slew Rate Control for Silicon Carbide Devices Using Active Gate Drivers," in IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 9, no. 4, pp. 4096-4114, Aug. 2021.

[36] L. Chen and F. Z. Peng, "Closed-Loop Gate Drive for High Power IGBTs," 2009 Twenty-Fourth Annual IEEE Applied Power Electronics Conference and Exposition, Washington, DC, USA, 2009, pp. 1331-1337.

[37] Y. Noge, M. Shoyama and M. Deng, "Active Gate Driver for High Power SiC-MOSFET Module with Source Current Feedback and P-D controller," 2021 IEEE 12th Energy Conversion Congress & Exposition - Asia (ECCE-Asia), Singapore, Singapore, 2021, pp. 1350-1353.

[38] P. Anthony, N. McNeill and D. Holliday, "High-Speed Resonant Gate Driver With Controlled Peak Gate Voltage for Silicon Carbide MOSFETs," in IEEE Transactions on Industry Applications, vol. 50, no. 1, pp. 573-583, Jan.-Feb. 2014.

[39] Helong Li and S. Munk-Nielsen, "Detail study of SiC MOSFET switching characteristics," 2014 IEEE 5th International Symposium on Power Electronics for Distributed Generation Systems (PEDG), Galway, Ireland, 2014, pp. 1-5.

[40] A. Mahar, A. Hassan, R. Murphree, J. De La Rosa Garcia, B. Parkhideh and H. A. Mantooth, "A DC to 42.8 MHz Bandwidth Current Sensor Readout Interface using Amplifiers with Feedforward Compensation for Power Electronics Applications," 2022 23rd International Middle East Power Systems Conference (MEPCON), Cairo, Egypt, 2022, pp. 1-5.

[41] S. Bajoria, V. K. Singh, R. Kunde and C. D. Parikh, "Low power high bandwidth amplifier with RC Miller and gain enhanced feedforward compensation," Proceeding of the 13th international symposium on Low power electronics and design (ISLPED '08), Bangalore, India, 2008, pp. 193-196.