本論文利用UMC 90 nm CMOS製程，設計操作頻率為905 MHz之射頻轉直流電路與解調變電路，兩者電路主要應用於被動式RFID電子標籤架構中，其功能為提供直流電壓和解調訊號。在實驗模擬上最低輸入功率、輸出電壓與最佳功率轉換效率分為-15 dBm、1.25 V及4.9 %；測量結果分別為 -10 dBm、1.08 V及1 %；資料傳輸速率範圍為16.6 Kbps ~ 25 Kbps；該晶片面積為0.46×0.52 mm^2。
905 MHz被動式RFID電子標籤使用TSMC 0.18um CMOS製程實現，並利用Native CMOS元件之零臨界電壓特性，以建構三階電荷幫浦作為射頻轉直流電路核心，進而提高功率轉換效率。該Tag之射頻轉直流電路最低輸入功率、輸出電壓與最高功率轉換效率分為-20dBm、0.59 V及26.7 %；測量結果分別為 -1 dBm、0.7 V及0.49 %；此晶片面積為0.52×0.62 mm^2

In this study, the approach to design RF to DC and demodulator which both have 905MHz operation frequency is the process of the UMC 90 nm CMOS. The functions of those are to provide DC voltage and demodulate signal in the structure of Passive RFID Tag application. Through the simulation, the minimum input power, output voltage, and the maximum power efficiency are -10 dBm, 1.08 V, and 4.9% respectively. The measurements of the chip, which sizes 0.46×0.52 mm^2, are -10 dBm, 1.08 V, and 1%. Moreover, the range of the data rate is 16.6 Kbps to 25 Kbps.
TSMC 0.18um CMOS process is use to accomplish 905 MHz Passive RFID Tag. To enhance the power efficiency, the property of zero threshold voltage of native CMOS device is used to establish the three-stage charge pump as the core of the RF to DC. The minimum input power, output voltage, and the maximum power efficiency of the tag’s RF to DC are -20 dBm, 0.59V, and 26.7% respectively. In additionally, the measurements of the chip, which area is 0.52×0.62mm^2, are -1dBm, 0.7 V, and 0.49%.

CH1:
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[5].Y. Yao, Y. Shi and F. F. Dai, “A Novel Low-power Input-Independent MOS AC/DC Charge Pump,” Proc. of IEEE ISCAS, vol.1, pp. 380-383, May. 2005.
[6].M.-L. Hsia, Y.-S. Tsai, and T.-C. Chen, “An UHF Passive RFID Transponder Using A Low Power Clock Generator without Passive Components,” Proc. of IEEE MWSCAS, pp.11-15, Jul. 2007.
[7].顧寶文，「900 MHz 8位元被動式CMOS RFID Tag晶片設計」國立台灣科技大學電機工程系研究所碩士論文，2009。
[8].陳澤源，「915 MHz射頻辨識系統之被動式標籤電路實現」國立台灣大學電子工程研究所碩士論文，2008。
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CH2:
參考文獻
[1].Y. Hong et al., “Design and Challenges of Passive UHF RFID Tag in 90nm CMOS Technology,” Proc. of IEEE EDSSC, pp.1-4, May. 2008.
[2].J.-P. Curty et al., “Remotely Powered Addressable UHF RFID Integrated System,” IEEE Journal of Solid State Circuits, vol. 40, no. 11, pp.2193-2202 Nov. 2005.
[3].U. Karthaus and M. Fischer, “Fully Integrated Passive UHF RFID Transponder IC With 16.7W Minimum RF Input Power,” IEEE Journal of Solid State Circuits, vol. 38, no. 10, pp. 1602-1608, Oct. 2003.
[4].Y. Yao, Y. Shi and F. F. Dai, “A Novel Low-power Input-Independent MOS AC/DC Charge Pump,” Proc. of IEEE ISCAS, vol.1, pp. 380-383, May. 2005.
[5].M.-L. Hsia, Y.-S. Tsai, and T.-C. Chen, “An UHF Passive RFID Transponder Using A Low Power Clock Generator without Passive Components,” Proc. of IEEE MWSCAS, pp.11-15, Jul. 2007.
[6].顧寶文，「900 MHz 8位元被動式CMOS RFID Tag晶片設計」國立台灣科技大學電機工程系研究所碩士論文，2009。
[7].陳澤源，「915 MHz射頻辨識系統之被動式標籤電路實現」國立台灣大學電子工程研究所碩士論文，2008。
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CH3:
[1].M.-L. Hsia, Y.-S. Tsai, and T.-C. Chen, “An UHF Passive RFID Transponder Using A Low Power Clock Generator without Passive Components,” Proc. of IEEE MWSCAS, pp.11-15, Jul. 2007.
[2].顧寶文，「900 MHz 8位元被動式CMOS RFID Tag晶片設計」國立台灣科技大學電機工程系研究所碩士論文，2009。
[3].陳澤源，「915 MHz射頻辨識系統之被動式標籤電路實現」國立台灣大學電子工程研究所碩士論文，2008。
CH4:
參考文獻
[1].Y. Hong et al., “Design and Challenges of Passive UHF RFID Tag in 90nm CMOS Technology,” Proc. of IEEE EDSSC, pp.1-4, May. 2008.
[2].J.-P. Curty et al., “Remotely Powered Addressable UHF RFID Integrated System,” IEEE Journal of Solid State Circuits, vol. 40, no. 11, pp.2193-2202 Nov. 2005.
[3].U. Karthaus and M. Fischer, “Fully Integrated Passive UHF RFID Transponder IC With 16.7W Minimum RF Input Power,” IEEE Journal of Solid State Circuits, vol. 38, no. 10, pp. 1602-1608, Oct. 2003.
[4].Y. Yao, Y. Shi and F. F. Dai, “A Novel Low-power Input-Independent MOS AC/DC Charge Pump,” Proc. of IEEE ISCAS, vol.1, pp. 380-383, May. 2005.
[5].陳澤源，「915 MHz射頻辨識系統之被動式標籤電路實現」國立台灣大學電子工程研究所碩士論文，2008。