本研究以管狀高溫爐利用化學氣相沉積法以氬氣和氧氣當载氣來沉積氧化鋅(ZnO)薄膜於矽基板上。和熱處理實驗的結果來做探討。剛沉積氧化鋅薄膜則用場發射掃描電子顯微鏡
(FE-SEM)、X光繞射譜線(XRD)、拉曼散射光譜(Raman)、二次離子質譜儀(SIMS)和光激發螢光光譜(PL)分析。從X光繞射譜線圖知氧化鋅薄膜的(002)優選排向皆相當明顯。拉曼散射光譜和二次離子質譜
儀都分析出在氧化鋅薄膜裡含有碳和氫雜質成分。剛沉積氧化鋅薄膜在光激發螢光光譜上顯示除了觀察到有氧化鋅本身的能隙發光於
3.27 eV(379 nm)外，本實驗還發現別的螢光訊號於3.15eV (393 nm)。而這螢光訊號機制來源於氧化鋅薄膜裡的碳和氫雜質有關。此外，在經過熱處理後，光激發螢光光譜圖上會呈現隨著溫度條件變化會有
紅光和綠光兩種機制。

ZnO thin films were deposited on Si substrate by CVD utilizing a
combination of argon and oxygen as the carrying gas in a horizontal tube
furnace. The effect of thermal annealing on the ZnO films is
investigated. ZnO thin films were analyzed using field-emission
scanning electron microscopy (FE-SEM), X-ray diffraction (XRD),
Raman Scattering Spectroscopy (Raman), Secondary Ion Mass
Spectroscopy (SIMS), and Photoluminescence (PL). The XRD profile
shows that the ZnO films all have preferred orientation of ZnO(002).
Raman and SIMS analysis show carbon and hydrogen were contained in
ZnO thin films. The PL spectra of as-deposited ZnO films show a
strong photoluminescence centered at 3.15 eV (393 nm), besides the
ZnO was bandgap emission at 3.27 eV (379 nm). This emission
centered at 3.15 eV is found to be correlated with presence of carbon and
hydrogen in ZnO thin films. Furthermore, the PL spectra of annealed
ZnO thin films exhibit both red emission and green emission that are
dependent on annealing conditions.

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