研究生: |
林玠模 Jie-Mo Lin |
---|---|
論文名稱: |
以多層結構建構高效率CuInS2量子點敏化太陽能電池 Enhanced Photovoltaic Performance of CuInS2 Quantum dot–sensitized Solar Cells Based on Multilayered Architecture |
指導教授: |
張家耀
Jia-Yaw Chang |
口試委員: |
江志強
Jyh-Chiang Jiang 何郡軒 Jinn-Hsuan Ho |
學位類別: |
碩士 Master |
系所名稱: |
工程學院 - 化學工程系 Department of Chemical Engineering |
論文出版年: | 2013 |
畢業學年度: | 101 |
語文別: | 中文 |
論文頁數: | 130 |
中文關鍵詞: | 量子點敏化太陽能電池 、量子點 、CuInS2 、緩衝層 、共敏化 、鈍化層 、連續離子層吸附反應法 |
外文關鍵詞: | Quantum dot-Sensitized Solar Cell (QDSSC), Quantum dot, CuInS2, Buffer layer, Co-sensitization, Passivation layer, SILAR |
相關次數: | 點閱:456 下載:0 |
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本研究採用連續離子層吸附反應法(Successive Ionic Layer Adsorption and Reaction, SILAR)於TiO2表面沉積不同類型的量子點,探討量子點異質結構間的材料性質與光電特性對電荷傳輸的影響,以多層敏化結構來提升CuInS2量子點敏化太陽能電池(Quantum dot-Sensitized Solar Cell, QDSSC)的整體光電轉換效率。本實驗以網印法(Screen printing)將TiO2塗佈於導電玻璃作為吸附量子點的光電極(Photoelectrode),並在沉積CuInS2前,利用不同類型的量子點作為緩衝層來修飾TiO2,以減少TiO2表面缺陷。透過對元件的光電特性分析,得知In2Se3能有效地將CuInS2產生的激發電子注入TiO2,增加元件的光電流。接著我們結合與CuInS2吸光範圍不同的量子點CdS及CdSe作為共敏化劑(Hyper-sensitizer),來拓展元件的吸光範圍,提升對入射光的捕獲率,因量子點間的能隙差異產生的共敏化效應(Co-sensitization),使元件的光電流大幅成長。其中以CdSe為共化劑的元件,效率提升百分比超過130%。最後,為了減少漏電流對效率的影響,我們使用寬能隙量子點ZnS與ZnSe作為鈍化層,包覆於光電極表面,以防止內層量子點與polysulfide(S^(2-)/S_x^(2-))電解液直接接觸,減少激發電子與氧化還原對發生再結合,敏化結構為In2Se3/CuInS2/CdSe/ZnSe的元件,其開路電壓Voc為575 mV,FF為46.5%,電流密度Jsc可達17.0 mA cm-2,整體光電轉換效率高達4.55%。
In this study, various types of quantum dots were deposited on the surfaces of TiO2 by using the successive ionic layer adsorption and reaction (SILAR) process. We investigated the effect of heterostructure interface on the charge transfer in order to fabricate efficient CuInS2 quantum dot-sensitized solar cells (QDSSC) based on multilayered architecture. Firstly, the photoelectrode was prepared by screen printing of a TiO2 paste on the FTO glass. We pretreated the surfaces of bare TiO2 film with different types of quantum dots as buffer layers to reduce the density of electron trap states. The Jsc of CuInS2-based QDSSC using In2Se3 as the buffer layer benefited from the effective injection of excited electrons at the interfacial region between TiO2 and CuInS2. Then, to further improve the light harvesting efficiency of CuInS2-based QDSSC coating In2Se3 as the buffer layer, we combined CdS or CdSe as the hyper-sensitizers. As a result, the co-sensitization of CuInS2 and CdSe significantly raised the Jsc and FF of the photovoltaic device, yielding a 130% increase in overall efficiency. Finally, the photoelectrode was passivated with the wide band gap semiconductor, ZnS or ZnSe, to prevent the electron leakage from QDs to the polysulfide electrolyte. The QDSSC consisting of In2Se3/CuInS2/CdSe/ZnSe multilayered structure exhibited the best performance with a conversion efficiency of 4.55%.
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