壓控振盪器與除頻器是頻率合成器電路中主要的電路之一。對壓控振盪器而言，低相位雜訊可避免相鄰雜訊訊號經由混波轉換的干擾。而振盪器的輸出則經由除頻器來達成降頻的工作，因此，除頻器需具有高頻操作，寬的操作頻寬及低功率消耗。

第一部分我們提出了一個使用矽-鍺雙極性電晶體來研製除4的8相位注入鎖定除頻器電路，此除頻器電路以4級環形振盪器為架構，使用台積電的矽鍺0.35μm雙載子互補式金屬氧化半導體製程研製。此電路使用尾端注入訊號到雙極性電晶體的基極端方式來達到除4的功能。

第二部分我們提出了一個新式雙頻多模的LC-tank注入鎖定除頻器電路，是使用台積電所提供之零點一八微米互補式金氧半製程所製造，此除頻器使用一組nMOS交錯耦合的LC-tank振盪器，加上一組電感開關來做為頻帶上的選擇。利用橫跨在串聯電感上的開關的開/關，讓共振器可操作在串聯可調區或是並聯可調區。此電路中心頻率在高頻從8.7~10.07 GHz；低頻從4.29~4.93 GHz。

最後，設計一個雙頻帶電壓控制振盪器，此電壓控制振盪器使用一組nMOS交錯耦合的考畢子電壓控制振盪器，電路使用台積電所提供之零點一八微米互補式金氧半製程所製造,使用0.8伏特的供應電壓。此電路允許電壓控制振盪器使用共同的LC-tank來操作於兩個共振腔頻率。此電壓控制振盪器有兩組輸入控制，一組是用來當輸出頻率的連續控制；另一組是用來當頻帶上的選擇開關。這電壓控制振盪器是設計在5 GHz和12 GHz不同的輸出頻帶。

The key building blocks in the frequency synthesizer are the voltage controlled oscillator (VCO) and the high frequency divider circuit. Most importantly, low phase-noise is required to avoid corrupting the mixer-converted signal by close interfering tones for VCO circuit. The output of the VCO is divided down by the frequency divider which requires operating at high frequencies, wide operating range and lower power consumption.

The first part proposes an 8-phase divide-by-4 silicon–germanium (SiGe) heterojunction bipolar transistor (HBT) injection locked frequency divider (ILFD). The ILFD is based on a 4-stage ring oscillator, and was fabricated in the 0.35μm SiGe 3P3M BiCMOS technology. The divide-by-4 function is performed by injecting a signal to the base of the tail HBT.

The second part of this thesis proposes a new dual band multi-modulus CMOS LC-tank injection locked frequency divider (ILFD) is proposed and implemented in a 0.18μm CMOS process, it is realized with a cross-coupled nMOS LC-tank oscillator with an inductor switch for frequency band selection. The resonator can be a series-tuned or parallel-tuned depending upon the on/off state of a switch across a series-tuned inductor. The free-running frequency is from 4.29 (8.7) GHz to 4.93 (10.07) GHz for the low- (high-) frequency band.

Finally, presents a dual-band CMOS voltage controlled oscillator (VCO).The VCO is composed of n-core cross-coupled Colpitts VCOs and was implemented in 0.18μm CMOS technology with 0.8V supply voltage. The circuit allows the VCO to operate at two resonant frequencies with a common LC tank. The VCO has two control inputs, one for continuous control of the output frequency and one for band switching. This VCO is configured with 5 GHz and 12 GHz frequency bands with differential outputs.

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