本論文利用p型材料五環素(pentacene)以及n型材料萘苯亞醯胺衍生物(NTCDI-C8F15, N,N’-dipentadecafluorooctyl-1,4,5,8-naphtalene tetracarboxylic Diimide)作為有機薄膜電晶體元件之半導體主動層，並以自行架設之真空蒸鍍即時量測系統(in situ real time measurement system)，探討元件特性與膜厚變化的關聯性。於室溫下分別以不同蒸鍍速率(0.01 nm/s, 0.03 nm/s, 0.1 nm/s)蒸鍍五環素薄膜的實驗中發現，蒸鍍條件顯著的影響了初始膜層的成膜品質與覆蓋率，其中以鍍率0.03 nm/s蒸鍍的五環素元件，有著較高的載子遷移率，可達0.21 cm2/Vs，並發現在超薄膜層時(約1.5 nm)便已形成載子傳輸通道；此外在鍍率0.03 nm/s的製程條件時，在超薄膜層(1.5 nm)的覆蓋率亦遠高於其餘兩種製程條件，推測這和高鍍率(0.1nm/s)以及低鍍率(0.01 nm/s)製程的薄膜在氧化層介面間存在較多的孔隙有關，並發現初始膜層的生長品質對於元件特性是至關重要的。
而在材料純化分析研究方面，發現經純化後的五環素電晶體，在低於一個單分子層(1 ML, ~1.54 nm)時便有場效特性產生。在載子遷移率方面，五環素經純化後其載子遷移率由原本的0.13 cm2/Vs增進到0.24 cm2/Vs；由原子力顯微鏡觀察，發現純化後的五環素薄膜有著較大的晶粒大小，並且在0.5 nm超薄膜層時便有極高的覆蓋率，顯示初始膜層成長對於有機薄膜電晶體特性表現有決定性的影響。
n型材料的研究則是以萘苯亞醯胺衍生物(NTCDI-C8F15)為主動層，發現同樣的場效特性在薄膜層時(2 MLs)便可發現，而由原子力顯微鏡更加清楚了解該材料的薄膜成長機制，並發現載子遷移率在厚度約3.5 MLs時便達飽和。
總結以上結果發現，縱使因材料不同而使電晶體元件特性有著不同的表現，其飽和膜厚值(d0)也不儘相同，但我們可以發現在初始膜層成長的品質，對元件特性來說都是同等重要的，並可由此實驗發現最佳化的製程參數。最後我們利用上述n型與p型材料的研究成果，成功製作出互補式邏輯電路中的反相器，並測得其gain值為8。

This thesis has report an in situ and real-time measurement method for the electrical characteristic evolution of n-type (N,N’-dipentadecafluorooctyl-1,4,5,8-naphtalene tetracarboxylic Diimide, NTCDI-C8F15) and p-type (pentacene) organic thin film transistors (OTFTs) during the deposition of organic thin film.
In the first part, we analyze the thickness dependence of pentacene OTFTs where grown the thin film at different deposition rate (0.01, 0.03 and 0.1 nm/s) on the bottom contact substrate at room temperature. We demonstrate that the carrier transport in pentacene OTFTs is strongly affected by the quality of surface coverage in the first few monolayers. In addition, at our optimum deposition rate of 0.03 nm/s, we obtained a hole mobility of 0.21 cm2/Vs better than slow (0.01 nm/s) and fast (0.1 nm/s) rates. We speculate that this improvement of hole mobility is due to the increased surface coverage on the insulator, resulting in improving probability of charge percolation in the channel.
In the second part, we study the thickness dependence of the purified and non-purified pentacene respectively. We found that the field-effect phenomenon could be observed less than 1 ML (~1.54 nm) for the purified pentacene and the hole mobility is improved to 0.24 cm2/V s. With the use of atomic force microscope (AFM) measurement, the purified pentacene exhibits larger grain size and better film coverage, indicating the better crystallinity of the purified pentacene that is mainly from the absence of the impurities. It has demonstrated that the growth mechanism of the first few monolayers plays an important role in the electrical characteristic of organic thin film transistors.
In the third part has presented thickness dependence of n-type (NTCDI-C8F15) organic field-effect transistors. The electron mobility of the device as thin as 2 MLs has been determined. The saturation thickness (d0) is 3.5 MLs. Atomic force microscope revealed that, island mode growth mechanism of NTCDI-C8F15 with near upright position stacking on substrate has been confirmed, is because of the fluorophobic effect of the material
According to the aforementioned, we conclude the thin film growth quality in first few monolayer is the most important issue for organic thin film transistors, although different materials have different electrical characteristics and saturation thickness (d0). We adjusted the best process parameter from these three experiments. Finally, we demonstrated a complementary inverter by using these two materials (pentacene and NTCDI-C8F15) and attained the value of gain at 8, which was similar to literatures.

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