首先利用溶膠-凝膠法製備氧化矽散射層，藉改變氨水濃度、乙醇比例、分散劑劑量等氧化矽膠體合成條件，探討製備出的氧化矽球體散射層表面形態及其透光特性。實驗結果顯示，當控制氧化矽粒徑為400 nm、分散劑PVP-K30重量百分比15 %、及兩階段旋轉塗佈轉速為3000 rpm/4000 rpm時，可製作出粒子均勻分佈透光率達90 %以上且對600 nm波長的光透過散射率達30 %的氧化矽散射層。
　　接著於氧化矽粒子層上沉積具粗糙化散射結構的(110)晶面擇優生長之ZnO薄膜，完成雙散射層結構。最後則採用濺鍍或化學氣相沉積法完成TCO薄膜的製備。
元件試作部份，我們利用射頻電漿輔助化學氣相沉積裝置製作單接面非晶矽薄膜太陽能電池，藉由p+型窗口層的厚度改變及退火處理後得到元件特性如，開路電壓、短路電流及填充係數分為784 mV、14.9 mA/cm2及34.2 %，光電轉換效率4.0 %。

　　Silica/ZnO dual scattering layers coated on glass substrates were applied for fabrication of silicon thin film tandem solar cell. First of all, sol-gel method was used to make mono-dispersed silica particle layer as the silica light scattering layer. Preparation conditions was the concentration of ammonium hydroxide, the proportion of ethanol and the quantity of dispersing agent were systematically varied so as to investigate the morphological and optical properties of the silica scattering layer. Through spin-on a gel with silica particles 400 nm in size dispersed in 15 wt% of PVP-K30 dispersant using two step spin at 3000 rpm/4000 rpm, an effective silica scattering layer was established. Then, ZnO layer with the characteristic hexagonal (110) pyramidal surface structure was deposited on the scattering layer. Finally, TCO layer such as Ga-doped ZnO or Al-doped ZnO was grown on the ZnO layer to constitute a complete TCO glass.
　　For device, we fabricate amorphous silicon p-i-n thin film solar cell by RF-PECVD system. The short-circuit current, open-circuit voltage and fill factor of device were 14.9 mA/cm2, 784 mV and 34.2 %, respectively. The optoelectronic conversion efficiency of 4.0 % was achieved.

1. Yang, J., A. Banerjee, and S. Guha, Applied Physics Letters 70.22 (1997): 2975-2977.
2. J. Meier, U. Kroll, S. Benagli, L. Fesquet, J. Steinhauser, D. Borello, J-B. Orhan, Y. Djeridane, E. Vallat-Sauvain, M. Fecioru-Morariu, B. Mereu, J. Kalas, J. Hoetzel, P. Losio, M. Kupich, O. Kluth, T. Eisenhammer, D. Weidmanc, S. Marjanovic and G. Kohnke , Energy Procedia 15 (2012): 179-188.
3. Luque, Antonio, and Steven Hegedus, eds. Handbook of photovoltaic science and engineering. Wiley. com, 2011.
4. Mullerova, J., Jurecka, S., Sutta, P., and Mikula, M., Acta Phys. Slovaca., Vol.55, pp.351-359 (2005)
5. Kasap, S.O., Principles of Electronic Materials and Devices, pp.81 (2006)
6. Shah, A. V., Schade, H., Vanecek, M., Meier, J., Vallat-Sauvain, E., Wyrsch, N., Kroll, U., Droz, C., and Bailat, J., Prog. Photovolt: Res. Appl., Vol.12 pp.113-142 (2004)
7. Spear, W.E. and P.G. Lecomber, Solid State Commun., Vol.17, pp.1193-1196 (1975)
8. Lee, C.H., J.W. Jeon, and K.S. Lim, J. Appl. Phys., Vol.87, pp.8778-8785 (2000)
9. Myong, S.Y., S.S. Kim, and K.S. Lim, Appl. Phys. Lett., Vol.84, pp. 5416-5418 (2004)
10. Ogawa, S., Okabe, M., Itoh, T., Yoshida, N., and Nonomura, S., Thin Solid Films, Vol.516, pp.758-760 (2008)
11. Karabay, I., Mod. Phys. Lett. B., Vol.20, pp.1591-1596 (2006)
12. Miyahara, H., Takai, M., Nishimoto, T., Kondo, M., and Matsuda, A., Sol. Energy Mater. & Sol. Cells., Vol.74, pp.351-356 (2002)
13. Matsuda, A., Takai, M., Nishimoto, T., and Kondo, M., Sol. Energy Mater. & Sol. Cells., Vol.78, pp.3-26 (2003)
14. Matsuda, A., Plasma Phys Contr Fusion., Vol.39, pp.431-436 (1997)
15. Matsuda, A., Jpn. J. Appl. Phys., Vol.43, pp.7909-7920 (2004)
16. Perrin, J., J. Non-Cryst. Solids., Vol.137, pp.639-644 (1991)
17. Kawase, M., Masuda, T., Nagashima, M., Maki, T., Miyamoto, Y., and Hashimoto, K., Jpn. J. Appl. Phys., Vol.33, pp.3830-3836 (1994)
18. Robertson, J. and M.J. Powell, Thin Solid Films, Vol.337, pp.32-36 (1999)
19. Robertson, J. , J. Non-Cryst. Solids., Vol.266, pp.79-83 (2000)
20. Carabe, J. and J.J. Gandia, Opto-Electron. Rev., Vol.12, pp.1-6 (2004)
21. Minami, Tadatsugu., Semiconductor Science and Technology 20.4 (2005): S35.
22. J. Muller, B. Rech, J. Springer, M. Vanecek, Solar Energy 77.6 (2004): 917-930.
23. J. Steinhauser, J.-F. Boucher, E. Omnes, D. Borrello, E. Vallat-Sauvain, G. Monteduro, M. Marmelo, J.-B. Orhan, B. Wolf, J. Bailat, S. Benagli, J. Meier, U. Kroll, Thin Solid Films 520.4 (2011): 1218-1222.
24. S. Nicolay, M. Benkhaira, L. Ding, J. Escarre, G. Bugnon, F. Meillaud, C. Ballif, Solar Energy Materials and Solar Cells 105 (2012): 46-52.
25. Hongsingthong, Aswin, et al. , Jpn. J. Appl. Phys. Appl. 51.10 (2012).
26. Kolbe, G., Dissertation, Jena, 1956
27. LaMer, Victor K., and Robert H. Dinegar., Journal of the American Chemical Society 72.11 (1950): 4847-4854.
28. T. Matsoukas and E. Gulari, Journal of Colloid And Interface Science, vol. 124, no. 1, pp. 252–261, 1988.
29. T. Matsoukas and E. Gulari, Journal of Colloid And Interface Science, vol. 132,no. 1, pp. 13–21, 1989.
30. G. H. Bogush, M. A. Tracy, and C. F. Zukoski, Journal of Non-Crystalline Solids, vol. 104, no. 1, pp. 95–106, 1988.
31. G.H. Bogush, M.A. Tracy, and C.F. Zukoski, IV, J. Non-Cryst. Solids104,95 (1988).
32. W. Stober and A. Fink, J. Colloid Interface Sci.26,62 (1968).
33. Tan, C. G.; Bowen, B. D.; Epstein, N. J. Colloid Interface Sci. 1987, 118, 290.
34. Rahman, Ismail Ab, and Vejayakumaran Padavettan., Journal of Nanomaterials 2012 (2012): 8.
35. Shanthi, S., C. Subramanian, and P. Ramasamy. , Crystal Research and Technology 34.8 (1999): 1037-1046.
36. Shan, F. K., and Y. S. Yu. , Journal of the European Ceramic Society 24.6 (2004): 1869-1872.