本研究藉由常壓電漿噴射束系統於矽晶片表面上進行粗糙化之動作，使用化學濕式蝕刻之鹼性蝕刻液進行蝕刻處理，將矽晶片表面形成織構化結構。並利用接觸角(Water Contact Angle)分析電漿處理後之表面特性、場發射掃描式電子顯微鏡(FE-SEM)觀看表面形貌、量測反射率之光譜圖以分析光進入樣品後之光吸收情況。
結果顯示電漿處理次數遞增、電漿至試片表面距離、電漿功率等參數將影響矽晶片表面之蝕刻結果，其中以功率350W、電漿處理試片距離為11 mm、電漿處理次數1次，蝕刻溫度為60ºC、蝕刻時間為3分鐘與五分鐘，相較於原始之矽晶片蝕刻有更好之效果，試片表面形貌之金字塔結構緊密相連，平均反射率約為5%。此結果證實，利用大氣式常壓電漿將表面轟擊至凹凸不平後再蝕刻，可以減少蝕刻時間、提升蝕刻速率、並延長蝕刻液之使用壽命。

Wet chemical etching was conducted to increase the surface roughness of the silicon wafers, and atmospheric pressure plasma jet was used by alkaline etching solution to achieve texture structure. The characteristic of surface after the plasma process was analyzed by Water Contact Angle (WCA), surface morphology observed by Field Emission Scanning Electron Microscopy (FE-SEM), and reflectivity data were measured to realize light absorption situation of the sample.
According to the results, the increasing scanning times, substrate to nozzle distance, and power of plasma would have an influence on the outcome of the etching silicon wafer on the surface. Among all of the conditions, when the power was 350W, the distance of substrate to nozzle was 11mm, and scanned for one time under etching at 60ºC for 3 and 5 minutes, the results would be much better compared to the original method for etching of the silicon wafers. The pyramid structures formed on the surface connected tightly, and the reflectivity average value was 5%. The results prove that when the surface was bombarded by atmospheric pressure plasma until the outlook became rugged followed by the etching process could reduce the etching time, elevate the etching rate, and extend the lifespan of the etching solution.

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