本研究主要探討以過飽和再結晶法以及配體輔助再沉澱法進行溴化銫鉛鈣鈦礦綠光量子點以及溴碘化銫鉛鈣鈦礦紅光量子點之製備與光電性質分析，並以此製備量子點發光二極體進行光電性質分析。由於在過飽和再結晶法所使用的長碳鏈配體，對於載子傳輸會是一大阻礙進而使發光二極體之性能不佳。因此本研究利用配體輔助再沉澱法將量子點表面之長碳鏈配體完全置換成短碳鏈配體後製作成溴化銫鉛鈣鈦礦綠光量子點發光二極體。隨後，透過雙邊鈍化策略，在電洞傳輸層與量子點薄膜間塗佈一層分子層溴化苯乙胺(PEABr)，並且於量子點薄膜頂部塗佈聚甲基丙烯酸甲酯(poly (methyl methacrylate)，PMMA)高分子層，其最大電流效率與外部量子效率分別為59.7 cd/A與18.7 %。最後，透過在綠光量子點系統中的結論，會選擇以配體輔助再沉澱法來合成溴碘化銫鉛鈣鈦礦紅光量子點，進一步製作成發光二極體，並且利用鈍化策略，在電洞傳輸層與量子點薄膜間塗佈一層分子層碘化苯乙胺(PEA-I)，其最大電流效率與外部量子效率分別為1.95 cd/A與2.26 %。

In this study, the supersaturation recrystallization method and ligand-assisted reprecipitation method were used to investigate the synthesis and optoelectronic properties of cesium lead halide (CsPbX3) perovskite quantum dots. In addition, CsPbX3 PQDs were used to fabricate quantum dot light emission diode (QLED) and analyzed its emission properties. Therefore, in this study, the ligand-assisted reprecipitation method was used to completely replace the surface of the quantum dots with short carbon chain ligands to fabricate CsPbBr3 quantum dot light-emitting diodes. Then, through the bilateral passivation strategy, the 2-phenylethanamine bromide (PEA-Br) is coated between PQDs film and transport layer, and the poly(methyl methacrylate) polymer layer is coated on the top of the CsPbBr3 quantum dot film, which can greatly improve the performance of the device. The maximum current efficiency and external quantum efficiency were respectively 59.7 cd/A with 18.7 %. Subsequently, cesium lead bromide iodide perovskite (CsPb(Br/I)3) red light quantum dots were synthesized by ligand-assisted reprecipitation method to fabricate light-emitting diodes. Through the passivation strategy, the 2-phenylethanamine iodide (PEA-I) is coated between PQDs film and transport layer. The maximum current efficiency and external quantum efficiency were respectively 1.95 cd/A with 2.26 %.

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