簡易檢索 / 詳目顯示
| 研究生： |
姚哲煒 Che-Wei Yao |
|---|---|
| 論文名稱： |
採用雙閘極絕緣層結構提升有機薄膜電晶體特性之研究 Performance Enhancement of Pentacene-Based Organic Thin-Film Transistors using Bilayer Gate Insulator |
| 指導教授： |
范慶麟
Ching-Lin Fan |
| 口試委員: |
范慶麟
Ching-Lin Fan 李志堅 Chih-Chien Lee 涂俊豪 Jun-Hao Tu 陳威州 Wei-Chou Chen |
| 學位類別： |
碩士 Master |
| 系所名稱： |
電資學院 - 光電工程研究所 Graduate Institute of Electro-Optical Engineering |
| 論文出版年： | 2017 |
| 畢業學年度： | 105 |
| 語文別： | 中文 |
| 論文頁數： | 96 |
| 中文關鍵詞： | 有機薄膜電晶體 、雙閘極絕緣層 、高介電質 、有機材料 、聚乙烯醇 、並五苯 |
| 外文關鍵詞： | OTFT, Bilayer Gate Insulator, PVP, PVA, pentacene, high K |
| 相關次數： | 點閱：271 下載：1 |
| 分享至: |
| 查詢本校圖書館目錄 查詢臺灣博碩士論文知識加值系統 勘誤回報 |
本論文將以Pentacene為主動層的材料背景下利用雙閘極絕緣層結構(PVA加PVP)，可獲得最佳的載子移動率 1.21 cm^2/V-s，並且利用電容串聯公式證明電容值整體放大倍率、AFM量測PVP材料更適合生長在高分子材料上、FTIR光譜儀分析氫氧跟離子量與Contact Angle、α-step等儀器來得知電特性、薄膜品質與膜厚。
首先PVA將不使用有毒性的交聯劑，單純調整PVA與DI.Water濃度比例，以PVA: DI.Water = 1:8時，可有效降低Vth與-OH的，隨後配合旋轉塗佈初轉速500 rpm，時間20秒，末轉速3500 rpm，持續時間為40秒，然後放進烤箱，以110°C烘烤90分鐘去除多餘水分得到最佳成膜品質。接這PVP部分，配製溶液的比例濃度、旋轉塗佈轉速以及加熱交聯溫度，來取得最佳值，比例濃度為PGMEA：PVP：PMCF = 100：10：5.0 (wt%)，旋轉塗佈初轉速500 rpm，時間20秒，末轉速5500 rpm，持續時間為40秒，放入烤箱以180。C加熱交聯90分鐘所製作出的有機薄膜電晶體的電特性為最佳。
將最佳PVP的參數製作在PVA薄膜上，可成功展現出PVA的high K特性且便可改善PVA親水性問題，如此一來增加電容值與pentacene獲得更好的生長品質 ，而大幅提升電特性。
This study has successfully improved the performance of pentacene-based organic thin-film transistor (OTFT) through adopting Polyvinyl Alcohol(PVA)/ poly-4-vinylphenol(PVP) bilayer gate insulator. The improved filed effect mobility and threshold votage are measured to be 1.21 cm2/V∙sec and - 8.6 V, respectively. The dramatic electrical enhancement is attributed to the soft surface of PVP and PVA combination, which leads to increment of pentacene grain size.
[1]Fan, C. L., Chiu, P. C. and Lin, C. C. “Low-Temperature-Deposited SiO2 Gate Insulator With Hydrophobic Methyl Groups for Bottom-Contact Organic Thin-Film Transistors,” IEEE Electron Device Lett., 2010, 31, 1485–1487.
[2]Fan, C. L., Y. Z. Lin, Lee, W. D., Wang, S. J., and Huang, C. H., “Improved pentacene growth continuity for enhancing the performance of pentacene-based organic thin-film transistors,” Org. Electron., 2012, 13, 2924–2928.
[3]Wei, C. Y., Adriyanto, Lin, F., Y. J., Li, Y. C., Huang, T. J., Chou, D. W., and Wang, Y. H., “Pentacene-based thin-film transistors with a solution-process hafnium oxide insulator,” IEEE Electron Device Lett., 2009, 30, 1039–1041.
[4]B. Kang, M. Jang, Y. Chung, H. Kim, S.K. Kwak, J.H. Oh, K. Cho, “Enhancing 2D growth of organic semiconductor thin films with macroporous structures via a small-molecule heterointerface” Nat. Commun. 5 (2014) 4752.
[5] K.-S. Jang, H.J. Suk, W.S. Kim, T. Ahn, J.-W. Ka, J. Kim, M.H. Yi, Org. ”Surface modification of polyimide gate
insulators for solution-processed 2,7-didecyl [1]benzothieno[3,2-b][1]benzothiophene (C10-BTBT) thin-film transistors” Electron. 13, 2012, 1665.
[6]Fan, C. L., Y. Z. Lin, Lee, W. D., Wang, S. J., and Huang, C. H., “Improved pentacene growth continuity for enhancing the performance of pentacene-based organic thin-film transistors,” Org. Electron., 2012, 13, 2924–2928.
[7]T. Umeda, D. Kumaki, and S. Tokito, “High air stability of threshold voltage on gate bias stress in pentacene TFTs with a hydroxyl-free and amorphous fluoropolymer as gate insulators,” Organic Electronics. 9, 545, 2008.
[8]G. D. Wilk, R. M. Wallace and J. M. Anthony, "High-K gate dielectrics: Current status and materials properties considerations," Journal of Applied Physics, vol. 89, no. 10, pp. 5243-5275, 2001.
[9]Chuan Yu Han1, Wing Man Tang, Cheung Hoi Leung, Chi Ming Che, and Pui, “To LaiHigh-mobility pentacene OTFT with TaLaO gate dielectric passivated by fluorine plasma,” P hys. Status Solidi RRL 8, No. 10, 866–870 , 2014Tzung-Da Tsai, Jer-Wei Chang, Ten-Chin Wen and Tzung-Fang Guo, “Manipulating the Hysteresis in Poly(vinyl alcohol)-Dielectric Organic Field-Effect Transistors Toward Memory Elements,” Adv. Funct. Mater. 2013, 23, 4206–4214.
[10]D. K. Hwang, Kimoon Lee, Jae Hoon Kim, Seongil ImChang Su Kim Hong Koo BaikJi Hoon Park and Eugene Kim, “Low-voltage high-mobility pentacene thin-film transistors with polymer/high- oxide double gate dielectrics,” Appl. Phys. Lett. 88, 2006, 243513.
[11]Jer-Wei Chang, Wei-Lieh Hsu, Chang-Yo Wua, Tzung-Fang Guo, Ten-Chin Wen, “The polymer gate dielectrics and source-drain electrodes on n-type pentacene-based organic field-effect transistors,” Organic Electronics, Vol. 11, 2010, 1613–1619.
[12]Changhe Liu, Qingping Zhu, Weipeng Jin and Wen Gu, Jun Wang “The ultraviolet-ozone effects on organic thin-film transistors with double polymeric dielectric layers,” Synthetic Metals, Vol. 161, 2011, 1635– 1639.
[13]Tomohito Sekine, Kenjiro Fukuda, Daisuke Kumaki, and Shizuo Tokito “Highly stable flexible printed organic thin-film transistor devices under high strain conditions using semiconducting polymers,” Japanese Journal of Applied Physics 54, 2015, 04DK10.
[14]SAUMEN MANDAL and MONICA KATIYAR, “Processing and performance of organic insulators as a gate layer in organic thin film transistors fabricated on polyethylene terephthalate substrate, “Bull. Mater. Sci, Vol. 36, No. 4, 2013, 653-660.
[15]Chun Chieh Wang, Wen-His Lee and Chao-Te Liu,” Double-gate organic thin-film transistor using a photosensitive polymer as the dielectric layer, ” Thin Solid Films, 518, 2010, 7385–7389.
[16]Ning Wang, Lipeng Zhao, Chuhong Zhang and Li Li,” Water states and thermal processability of boric acid modified poly(vinyl alcohol)” APPL. POLYM. SCI. 2016, 43246.
