研究生: |
廖昱勛 Yu-Hsun Liao |
---|---|
論文名稱: |
橫向式功率金氧半場效電晶體之研究 Study of Lateral Power MOSFET |
指導教授: |
莊敏宏
Miin-Horng Juang |
口試委員: |
徐世祥
Shih-Hsiang Hsu 李奎毅 Kuei-Yi Lee |
學位類別: |
碩士 Master |
系所名稱: |
電資學院 - 電子工程系 Department of Electronic and Computer Engineering |
論文出版年: | 2015 |
畢業學年度: | 103 |
語文別: | 英文 |
論文頁數: | 106 |
中文關鍵詞: | 金氧半場效電晶體 |
外文關鍵詞: | power MOSFET |
相關次數: | 點閱:359 下載:12 |
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功率金氧半場效電晶體是重要的分立元件。其元件特性包含低導通功率損耗、高輸入組阻抗、快速切換,以及承受大電壓及電流。其元件特性可作為開關使用,主要應用在功率轉換、整流、線路保護等,以電子產品來說用途相當極為廣泛,可應用在照明設備、電源供應器、通訊器材零件、汽車電子零件等。
為了因應電路積體化的潮流,將功率元件與電路整合在同一晶片上,本論選用將橫向式功率元件金氧半場效電晶體置於絕緣矽晶圓上。利用TSUPREM-4製程模擬軟體 及 MEDICI元件特性模擬軟體來輔助元件設計。
本論文將以傳統橫向式功率金氧半場效電晶體分別與具有平面式場板之橫向式功率金氧半場效電晶體與具有溝渠式場板之橫向式功率金氧半場效電晶體做比較。具場板之橫向式功率金氧半場效電晶體可有效提改變傳統橫向式功率金氧半場效電晶體的能帶進而影響電場分佈降低最大電場,提升崩潰電壓。具有平面式場板之橫向式功率金氧半場效電晶體有較高的導通電流,因為場板可以感應更多的導電電子,使飄移區域串聯電阻下降。反觀具溝渠式場板之橫向式功率金氧半場效電晶體則是與傳統橫向式功率金氧半場效電晶體無太大差異,原因在於雖然場板可以感應更多的導電電子,使飄移區域串聯電阻下降,但溝渠式的結構阻擋電流路徑使電阻上升,在相互作用下具溝渠式場板之橫向式功率金氧半場效電晶體導通電流表現與傳統橫向式功率金氧半場效電晶體相去不遠。
Power MOSFETs are playing an important role in discrete devices. The characteristic of the power MOSFETs include, low conduction, high input impedance, high switching speed, high breakdown voltage, and high operating current. The applications of the power MOSFETS are mainly used in power conversion, rectify, protection, etc. It is used widely for electronic product such as lighting, power supplies for computers, telecommunications or office equipment, and for automotive electronic components, etc.
We use TSUPREM-4 process simulator and MEDICI device simulator to help designing the device. For the circuits integration, we choose forming a lateral power MOSFET on the Silicon on Insulator (SOI) wafer.
The lateral power MOSFET with planar field-plate and trench field-plate respectively, can both effectively enhance the breakdown voltage. The usage of the planar field-plate and the trench field-plate can effectively change the slope of the energy band of the conventional lateral power MOSFET, and change the electric field distribution to create a smaller electric field. The lateral power MOSFET with planar field-plate achieves a larger on-state current, since the planar field-plate can attract more conducting carriers and reduce the series resistance. For the trench field-plate, it maintains almost the same on-state current as the conventional lateral power MOSFET, because of the relatively long conducting path of trench field-plate may degrade the series resistance.
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