橫向式功率金氧半場效電晶體之研究｜國立臺灣科技大學博碩士論文系統

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研究生：	廖昱勛 Yu-Hsun Liao
論文名稱：	橫向式功率金氧半場效電晶體之研究 Study of Lateral Power MOSFET
指導教授：	莊敏宏 Miin-Horng Juang
口試委員:	徐世祥 Shih-Hsiang Hsu 李奎毅 Kuei-Yi Lee
學位類別：	碩士 Master
系所名稱：	電資學院 - 電子工程系 Department of Electronic and Computer Engineering
論文出版年：	2015
畢業學年度：	103
語文別：	英文
論文頁數：	106
中文關鍵詞：	金氧半場效電晶體
外文關鍵詞：	power MOSFET
相關次數：	點閱：354 下載：12
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功率金氧半場效電晶體是重要的分立元件。其元件特性包含低導通功率損耗、高輸入組阻抗、快速切換，以及承受大電壓及電流。其元件特性可作為開關使用，主要應用在功率轉換、整流、線路保護等，以電子產品來說用途相當極為廣泛，可應用在照明設備、電源供應器、通訊器材零件、汽車電子零件等。
為了因應電路積體化的潮流，將功率元件與電路整合在同一晶片上，本論選用將橫向式功率元件金氧半場效電晶體置於絕緣矽晶圓上。利用TSUPREM-4製程模擬軟體及 MEDICI元件特性模擬軟體來輔助元件設計。
本論文將以傳統橫向式功率金氧半場效電晶體分別與具有平面式場板之橫向式功率金氧半場效電晶體與具有溝渠式場板之橫向式功率金氧半場效電晶體做比較。具場板之橫向式功率金氧半場效電晶體可有效提改變傳統橫向式功率金氧半場效電晶體的能帶進而影響電場分佈降低最大電場，提升崩潰電壓。具有平面式場板之橫向式功率金氧半場效電晶體有較高的導通電流，因為場板可以感應更多的導電電子，使飄移區域串聯電阻下降。反觀具溝渠式場板之橫向式功率金氧半場效電晶體則是與傳統橫向式功率金氧半場效電晶體無太大差異，原因在於雖然場板可以感應更多的導電電子，使飄移區域串聯電阻下降，但溝渠式的結構阻擋電流路徑使電阻上升，在相互作用下具溝渠式場板之橫向式功率金氧半場效電晶體導通電流表現與傳統橫向式功率金氧半場效電晶體相去不遠。

Power MOSFETs are playing an important role in discrete devices. The characteristic of the power MOSFETs include, low conduction, high input impedance, high switching speed, high breakdown voltage, and high operating current. The applications of the power MOSFETS are mainly used in power conversion, rectify, protection, etc. It is used widely for electronic product such as lighting, power supplies for computers, telecommunications or office equipment, and for automotive electronic components, etc.
We use TSUPREM-4 process simulator and MEDICI device simulator to help designing the device. For the circuits integration, we choose forming a lateral power MOSFET on the Silicon on Insulator (SOI) wafer.
The lateral power MOSFET with planar field-plate and trench field-plate respectively, can both effectively enhance the breakdown voltage. The usage of the planar field-plate and the trench field-plate can effectively change the slope of the energy band of the conventional lateral power MOSFET, and change the electric field distribution to create a smaller electric field. The lateral power MOSFET with planar field-plate achieves a larger on-state current, since the planar field-plate can attract more conducting carriers and reduce the series resistance. For the trench field-plate, it maintains almost the same on-state current as the conventional lateral power MOSFET, because of the relatively long conducting path of trench field-plate may degrade the series resistance.

摘要	i
Abstract	ii
Acknowledgement (Chinese)	iii
Contents         iv
Figure captions       vii
Chapter 1 Introduction	vii
1-1  Back ground and device application	1
1-2  The basic structure of the power MOSFET	1
1-2-1  The energy band diagram	3
1-2-2  The breakdown voltage	3
1-2-3  The Specific On-state Resistance	4
1-3  Motivation	5
1-4  Thesis organization	5
Chapter 2 Device fabrication	6
2-1  The conventional lateral power MOSFET	6
2-2  The lateral power MOSFET with planar field-plate	12
2-3  The lateral power MOSFET with trench field-plate	18
Chapter 3 Result and Discussion	25
3-1  The electrical characteristics of the conventional lateral power MOSFET and the lateral power MOSFET with planar field-plate.	25
3-1-1  The Id-Vd curve of the conventional lateral power MOSFET, and the lateral power MOSFET with planar field-plate.	26
3-1-2  The energy band diagrams of the conventional lateral power MOSFET, and the lateral power MOSFET with planar field-plate.	28
3-1-3  The two-dimensional electric field distribution and current flow diagram of the conventional lateral power MOSFET, and the lateral power MOSFET with planar field-plate.	30
3-2  The electrical characteristics of the lateral power MOSFET with planar field-plate in different bias.	33
3-2-1  The Id-Vd curve of the lateral power MOSFET with planar field-plate in different bias.	33
3-2-2  The energy band diagrams of the lateral power MOSFET with planar field-plate in different bias.	35

3-2-3  The two-dimensional electric field distribution and current flow diagram of the lateral power MOSFET with planar field-plate in different bias.	37
3-3  The parameters adjustment for the lateral power MOSFET with planar field-plate.	41
3-3-1  Lateral power MOSFET with planar field-plate is formed at different locations.	41
3-3-1-1  The Id-Vd curve of the lateral power MOSFET with planar field-plate is formed at different locations.	42
3-3-1-2  The energy band diagrams of the lateral power MOSFET with planar field-plate is formed at different locations.	44
3-3-1-3  The two-dimensional electric field distribution and current flow diagram of the lateral power MOSFET with planar field-plate is formed at different locations   47
3-3-2  Lateral power MOSFET with different length of planar field-plate.51
3-3-2-1  The Id-Vd curve of the lateral power MOSFET with different length of planar field-plate.	51
3-3-2-2  The energy band diagrams of the lateral power MOSFET with different length of planar field-plate.	53
3-3-2-3  The two-dimensional electric field distribution and current flow diagram of the lateral power MOSFET with different length of planar field-plate.	55
3-4  The electrical characteristics of the conventional lateral power MOSFET and the lateral power MOSFET with trench field-plate.	58
3-4-1  The Id-Vd curve of the conventional lateral power MOSFET, and the lateral power MOSFET with trench field-plate.	59
3-4-2  The energy band diagrams of the conventional lateral power MOSFET, and the lateral power MOSFET with trench field-plate.	61
3-4-3  The two-dimensional electric field distribution and current flow diagram of the conventional lateral power MOSFET, and the lateral power MOSFET with trench field-plate.	63
3-5  The electrical characteristics of the lateral power MOSFET with trench field-plate in different bias.	66
3-5-1  The Id-Vd curve of the lateral power MOSFET with trench field-plate in different bias.	66
3-5-2  The energy band diagrams of the lateral power MOSFET with trench field-plate in different bias.	68
3-5-3  The two-dimensional electric field distribution and current flow diagram of the lateral power MOSFET with trench field-plate in different bias	70
3-6  The parameters adjustment for the lateral power MOSFET with trench field-plate.	76
3-6-1  Lateral power MOSFET with trench field-plate is formed at different location  76
3-6-1-1  The Id-Vd curve of the lateral power MOSFET with trench field-plate is formed at different location.	76
3-6-1-2  The energy band diagrams of the lateral power MOSFET with trench field-plate is formed at different location.	79
3-6-1-3  The two-dimensional electric field distribution and current flow diagram of the lateral power MOSFET with trench field-plate is formed at different location.	 81
3-6-2  Lateral power MOSFET with different length of trench field-plate.	86
3-6-2-1  The Id-Vd curve of the lateral power MOSFET with different length of trench field-plate.	86
3-6-2-2  The energy band diagrams of the lateral power MOSFET with different length of trench field-plate.	88
3-6-2-3  The two-dimensional electric field distribution and current flow diagram of the lateral power MOSFET with different length of trench field-plate.	90
3-6-3  Lateral power MOSFET with different depth of trench field-plate.	95
3-6-3-1  The Id-Vd curve of the lateral power MOSFET with different depth of trench field-plate.	95
3-6-3-2  The energy band diagrams of the lateral power MOSFET with different depth of trench field-plate.	97
3-6-3-3  The two-dimensional electric field distribution and current flow diagram of the lateral power MOSFET with different depth of trench field-plate.	100
Chapter 4 Conclusions	104
Reference	105

                                

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