本研究旨在製備奈米塗料，預計製造出以二氧化釩為基材Doping二氧化鈦的新鈦釩氧化物，以達到控溫防汙建築材料，並評估Ti1-xVxO2合金建材是否能有效率的控制室內溫度及具有防汙效果，而符合節能環保的目標。
本實驗由VOSO4水溶液及NH4HCO3水溶液以sol-gel法先合成VO2前驅物(NH4)5[(VO)6(CO3)4(OH)9]•10H2O粉末，再將VO2前驅物溶於有機溶劑作為溶液凝膠法的前驅，再滴入鈦酸異丙酯Titanium(IV)isopropoxide(TTIP)與HCl/H2O；經由高溫爐燒結，獲得Ti1-xVxO2粉末。
我們由X-ray photoelectron spectroscopy(XPS)分析合金Ti與V比例為 0.36 : 0.64 ，將Ti1-xVxO2標定為Ti0.36V0.64O2；X-Ray diffraction patterns (XRD)測量其晶體結構，除了含有VO2(M)及TiO2(rutile)外，在2θ=50。、61。、66。有新的合金peak出現；經Differential scanning calorimetry(DSC)測量相轉變溫度為61℃與68℃；SEM觀察粒徑大小為100nm~500nm；Ultraviolet and Visible Spectroscopy(UV-Vis)測試亞甲基藍液被降解率達90%；Transform Infrared Spectroscopy (FTIR)偵測隨著溫度改變紅外光反射變化率提升5%。

This study is focused on the preparation of a materials with two properties of photocatalyst and IR proof for enhancing the quality of buildings.We combined vanadium dioxide(VO2)and titanium dioxide (TiO2) to create a Ti1-xVxO2 as the building material on the glass surface,which could achieve self-cleaning and isothermal effect.
We used VOSO4 and NH4HCO3 in aqueous solution to synthesize the precursor of (NH4)5[(VO)6(CO3)4(OH)9]•10H2O, The precursor (NH4)5 [(VO)6(CO3)4(OH)9]•10H2O was mixed with Titanium(IV) isopropoxide (TTIP) to form the nanoparticles in organic solvents,then Ti1-xVxO2 precursor were formed through hydrolysis of sol-gel reaction by dropping HCl/H2O slowly into the solution.The Ti1-xVxO2 precursor was heated to various temperatures in a silica tube, to obtain the Ti1-xVxO2 powder.
We analyzed the composition of Ti1-xVxO2 by X-ray photoelectron spectroscopy(XPS).The ratio of Ti toV is 0.36:0.64,which defined the materials as Ti0.36V0.64O2 ware obtain.The Ti0.36V0.64O2 demonstrated the X-Ray diffraction patterns on the peaks of monoclinic VO2 (M) and TiO2 (rutile) for the two crystal structures.Otherwise,the new peaks at 2θ=50。、61。、66。were found which Inferred the formation of various crystal structure in Ti0.36V0.64O2
The phase transition temperature was 61℃ and 68℃ from Differential scanning calorimetry(DSC) measurement.The particle size of Ti0.36V0.64O2 was around 100nm~500nm through SEM observation.
The photocatalyst and IR proof properties were tested by Methylene blue dissociation rate under ultraviolet and visible spectroscopy(UV-Vis) irradiation and Fourier Transform Infrared Spectroscopy (FTIR),respectively.The revealed that the Ti0.36V0.64O2 with photocatalyst and IR proof properties was fabricated successfully in this work.

1.王品然，王正全，工業材料，119-127(2004)。
2. 廖衛漢，蔡獻逸，化工資訊，年8月號，46-51。 (2000)
3. 謝坤龍，工業材料雜誌，3月號，183期，127-131。(2000)
4. 謝潼穎，陳郁文，觸媒與製程，7卷，3期，26-36。(1999)
5. D.M.-K. Lam ,B.W. Rossiter , Sci. Am., 265 , 80(1991)
6. L.N. Lewis, Chem. Rev., 93, 2693 (1993)
7. S.R. Nicewarner-pena et al., Science, 294, 137,(2001)
8. S.A. Maier et al , Adv. Mater. 13, 1501, (2001)
9. P.V. kamat, J. phys. Chem. B, 106, 7729, (2002)
10. M.-P. Pileni, Adv. Funct. Mater, 11, 323(2001)
11. R. Elghanian, J.J. Storhoff et al., Science, 277, 1078(1997)
12. V.I. Klimov, A.A. Mikhailovsky et al., Science, 290, 314(2000)
13.(a) Prokes, S.M.,Wang K.L. MRS Bull., 24(8), 13 (b) Cui, Y. ,Wei. Q , Park. H , Lieber, C.M. , Science 2001, 293 , 1289(1999)
14. Andrea Tao et al., Nano Letters, Vol. 3, No. 9 , 1229(2000)
15. F. Beteille, Morineau, and J. Livage, Materials Bulletin, 8, 1109-1117 (1997).
16. 吳國卿、蕭玉蘭編著，“奈米粒子材料的觸媒性質＂，化工資
訊，5，p.42(1999)
17. 溫明璋，”奈米二氧化鈦粉體之製備與相轉換動力分析”，國立台灣大學化學工程研究所碩士論文，台北，第56-58頁(2002)。
18. M. Kakihana,J. Sol-Gel Sci. Tech., 6, 7 (1996).
19. K. C. Chen, T. Tsuchuys, Sol-Gel processing of Silica. I The role of starting compounds [J]. J Non-Cryst Solids, 81:227. (1986)
20. J. Livage and M. Henry, J. D. Mackenzie and D. R. Ultrich, Eds., Wiley:, Chap 12. (1992)
21. C. Sanchez and J. Livage, New J. Chem., 14 ,513-521. (1990)
22. C. J. Brinker, J. Non-Crystal. Solids, 100 , 31-50. (1988)
23. C. Sanchez, J. Livage, M. Henry and F. Babonneau, J. Non-Crystal. Solids, 100 , 65-76. (1988)
24. K. Kato, A. Tsuzuki, H. Taoda, Y. Torll, T. Kato, Y. Butsugan.,
[J]. J. Mater. Sci , 29:5913-5915. (1994)
25. F. J. Morin, Phys. Rev. Lett., 3(1), 34-35 (1959)
26. B.Goodenough, J.Solid State Chem., 3, 490-500 (1971)
27. S. Minomora and H. Nagasaki, J. Phys. Soc. Japan, 19, 131-132 (1964)
28. J. F. De Natale, P. J. Hood, A. B. Harker, J. Appl. Phys., 66, 5844-5850 (1989)
29. W. Haidinger and D. Gross, 12, 433(1972).
30. W. R. Roach, Appl. Phys. Lett., 19, 453-455 (1971).
31. A. W. Smith, Appl. Phys. Lett., 23, 437-438 (1973).
32. G. V. Jorgensen, J. C. Lee, Solar Energy Mater. , 14, 205 (1986).
33. T. D. Manning and I. Parkin, Journal of materials chemistry, 14, 2554-2559 (2004).
34. A.Rogalski, Infrared detector, Gordon and Breach Science Publishers, Amsterdam,(2000)
35. 徐國彬，以溶膠凝膠法備製非冷卻型紅外光感測薄膜V1-x-yWxSiyO2 之光學及電性性質研究，國立台北科技大學化學工程學系碩士論文 (2004).
36. Ch. Leroux, Physical Review B, 57 (9),5111-5121 (1998).
37. M. Tazawa, P. Jin, T. Miki, k. Yoshimura, K. Igrashi and S. Tanemura, Thin solid films, 375, 100-103 (2000).
38. C.Sella, M. Maaza, O. Nemraoui, J. Lafait, N. Renard and Y.Sampeur, Surface and Coatings Technology, 98 ,1477-1482 (1998).
39. W. Haidinger and D. Gross, Thin Solid Film, 12, 433(1972).
40. R. T. Rajendra, B. Karunagaran, D. Mangalaraj, Sa. K. Narayandass, P. ater. Struct.12 ,188-192 (2003).
41. G. Guzman, R. Morineau and J. Livage, Materials Research Bulletin, 29(5), 509-515 (1994).
42. T. D. Manning and I. Parkin, Journal of materials chemistry, 14, 2554-2559 (2004).
43. C. B. Greenberg, ThinSolid Films, 110, 73-82 (1983).
44. D. P. Partlow, S. R. Gurkovich, K. C. Radford, and L. J. Denes, J. Appl. Phys., 70(1), 443-452, (1991).
45. T. Maruyama, and Y. Ikuta, J. Mater. Sci. 28, 5073-5078 (1993).
46. K. R. Speck, H. S.-W. Hu, M. E. Sherwin , and R. S. Potember, Thin Solid Films, 165, 317-322 (1988).
47. T. J. Hanlon, R. E. Walker, J. A. Coath , and M. A. Richardson, Thin Solid Films, 405, 234-237 (2002).
48Y. Dachuan, X. Niankan, Z. Jingyu , and Z. Xiulin, Materials Research Bulltien, 31(3),335-340, (1996)
49.. I. Takahashi, M. Hibino, and T. Kudo, Jpn. J. Appl. Phys., 35, 438-440 (1996).
50. X. Shiqing, M. Hongping, and J. Zhonghong, Journal of materials science, 39, 489-493 (2004).
51. H. Trarieux, Prop. Phys. Corps. Solids, 101-114 (1970).
52. R. Lopez, L. A. Boatner, T. E. Haynes, L. C. Feldman, and R. F. Haglund, “J. Appl. Phys., 92 (7), 4031-4036 (2002).
53. I. Balberg, B. Abeles, Y. Arie, Thin Solid films, 24, 307 (1974).
54. R. M. Bowman, J. M. Gregg, J. Materials Science: Materials in electronics, 9(3), 187-191(1998).
55. P. Jin, S. Nakao, and S. Tanemura, Thin olid films, 324, 151-158 (1998)
56. M. Pan, Z. Hongmei, and W. Shaowei, Crystal growth, 265, 121-126 (2004).
57. T. J. Hanlon, J. A. Coath, and M. A. Richardson, Thin Solid Films,
436, 269-272 (2003).
58. L. Songwei, H. Lisong , and G. Fuxi, Thin Solid Films, 353, 40-44 (1999).
59. F. Beteille, Morineau, and J. Livage, Materials Research Bulletin, 8, 1109-1117 (1997).
60. Powder Diffraction File, Card No. 21-1272,JCPDS--International Centre for Diffraction Data, Swarthmore (1997).
61. Hoffmann, M. R., Martin, S. T., Choi, W., and Bahnemann, D.W., Chem. Rev., 20: pp.69-95, (1995).
62. Martin, S. T., Herrmann, H., Choi, W., and Hoffmann, M. R., J. Chem. Soc. Faraday Trans. I., 90: pp.3315-3322, (1994).
63. Fox, M. A. and Dulay, M. T., Chem. Rev., 93: pp.341-357, (1993).
64. Kamat, P. V., Chem. Rev., 93: pp.267-300, (1993)
65.Hand book of X-ray Photoelectron spectroscopy,C.D.Wagner and W.M.Riggs,page 71-73.(1979)