本論文研製積體化氮化鎵發光二極體與監控發光強度的光偵測器，量測其發光二極體基本光電特性、p-i-n光偵測器基本光電特性、p-i-n光偵測器室溫下暗電流以及在與發光二極體不同距離下p-i-n光偵測器所產生的光電流、響應率以及耦光率。
p-i-n光偵測器與發光二極體在不同距離下且發光二極體電流由0 mA增加至2mA，當兩者距離1000μm 時，p-i-n光偵測器光電流約從2.78*10^(-8)安培增加至7.42*10^(-8)安培;當兩者距離2240μm 時，p-i-n光偵測器光電流約從2.53*10^(-10)安培增加至3.60*10^(-8)安培。可得知p-i-n光偵測器所產生的光電流隨者發光二極體電流增加呈線性增加。為了得知p-i-n光偵測器的監控響應率，當p-i-n光偵測器操作在0V偏壓，分別取在2mA的發光二極體光功率及光偵測器測得光電流值，藉由光電流與光功率比值可計算出監控響應率，監控響應率隨著兩者距離增加而下降。接著，我們探討在固定距離下發光二極體光功率與監控響應率關係，發光二極體電流由0 mA增加至2 mA可以發現光功率與響應率作圖可得近乎為一定值關係。其監控響應率在固定距離326μm下，大約在1.2*10^(-4) A/W至1.4*10^(-4) A/W之間。而我們為了得知p-i-n光偵測器對距離不同的發光二極體吸收多少比例的光功率，由於每顆發光二極體的發光效率不完全一樣，我們將發光二極體光功率規一化至1mW，帶入p-i-n光偵測器本身的響應率可得不同距離下入射p-i-n光偵測器的光功率，其與發光二極體光功率的比值定義為耦光率。當發光二極體與p-i-n光偵測元件距離1000μm時，約有0.83%的耦光率;而當發光二極體與p-i-n光偵測器距離5600μm時，僅約有0.01%的耦光率。耦光率隨距離遞減。

In this paper, a photodiode with integrated GaN LED and monitor illuminance is developed, and the basic photoelectric characteristics of the LED the basic photoelectric characteristics of the p-i-n photodetector, and the room temperature of the p-i-n photodiode are measured. The dark current and the photocurrent, responsivity, and light coupling rate produced by the pin photodetector at different distances from the LED.
The p-i-n photodiode and the LED are at different distances and the LED current is increased from 0 mA to 2 mA. When the distance is 1000 μm, the p-i-n photodiode photocurrent is about 2.78*10^(-8)A increased to 7.42*10^(-8) A; when the distance is 2240μm, the photocurrent of the p-i-n photodiode increases from 2.53*10^(-10) to 3.60*10^(-8) A. It can be seen that the photocurrent generated by the p-i-n photodiode increases linearly with the increase of the LED current. In order to know the monitoring responsivity of the p-i-n photodiode, when the p-i-n photodiode operates at 0V bias, the optical power of the LED of 2 mA and the photocurrent measured by the photodiode are respectively taken by the light. The ratio of current to optical power can be used to calculate the monitoring responsivity , and the monitoring responsivity decreases as the distance between the two increases. Next, we discuss the relationship between the optical power of the LED and the monitoring responsivity at a fixed distance. The current of the LED is increased from 0 mA to 2 mA. It can be found that the optical power and the response rate can be almost a certain value. The monitoring responsivity is at a fixed distance of 326 μm, which is between 1.2*10^(-4)A/W to 1.4*10^(-4) A/W. In order to know how much light power the p-i-n photodiode absorbs for different distances of the LED, since the luminous efficiency of each LED is not exactly the same, we will normalize the light power of the LED to 1mW, the responsivity of the p-i-n photodiode can be obtained from the optical power of the incident p-i-n photodiode at different distances, and the ratio of the optical power to the LED is defined as the coupling light ratio. When the LED and the p-i-n photodiode distance is 1000 μm, the coupling light ratio is about 0.83%; and when When the LED and the p-i-n photodiode distance is 5600 μm, only about 0.01% of the light-coupled ratio is obtained. The coupling light rate decreases with distance.

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